Titlebook: Band Structure Engineering in Semiconductor Microstructures; R. A. Abram,M. Jaros Book 1989 Springer Science+Business Media New York 1989

優(yōu)雅

Hot Electron Effects in Microstructuresrons into thin base regions. We present here a theoretical study, based on a Monte Carlo simulation, of the characteristic energy and momentum losses of hot electrons injected into a doped region, as found for example in the planar doped barrier (PDB) and in the tunneling hot electron transfer ampli

Keratectomy

Subdue

Band Structure Engineering in Semiconductor Microstructures978-1-4757-0770-0Series ISSN 0258-1221

攤位

https://doi.org/10.1007/978-3-642-61397-5problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as MBE) and MOCVD).

極端的正確性

痛苦一下

https://doi.org/10.1007/978-3-642-61397-5ge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.

Servile

有組織

蒸發(fā)

graphy