Titlebook: Band Structure Engineering in Semiconductor Microstructures; R. A. Abram,M. Jaros Book 1989 Springer Science+Business Media New York 1989

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E. Muschelknautz,G. H?gele,U. Muschelknautzthe alloy. Band gaps for a same-cation family of compounds derived from GaAs.Sb. exhibit a large bowing as a function of composition x similar to that reported experimentally for a metastable form of the alloy.

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Leitungs- und Verwaltungskompetenzenfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.

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E. Muschelknautz,G. H?gele,U. Muschelknautziodicity, lattice mismatch, and polarity of sublattices in the formation energy vary depending upon the type of the superlattice. The electronic structure is found to depend strongly on the sublattice periodicity when it is small.

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Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemsptical and x-ray photoemission experiments it turns out that ΔE. can be classified into two groups: small ΔE. (0–120 meV) and large ΔE. (300–400 meV). This paper presents an overview of these experimental data.

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Hot Electron Effects in Microstructuresfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.

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Book 1989Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has fac