找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre

[復(fù)制鏈接]
樓主: 海市蜃樓
41#
發(fā)表于 2025-3-28 15:05:20 | 只看該作者
Hochschulpolitische Trends in Europa self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.
42#
發(fā)表于 2025-3-28 22:35:54 | 只看該作者
Georg Kraus,Christel Becker-Kollel resonant frequency, .. =(k/m). = (stiffness/mass). is 5 MHz. We demonstrate nanometer-scale motion of these nanostructures and scanning probe devices. This technology is a significant array-technology that supports on-chip array addressing, control and amplification. Large, dense arrays of 10–20 n
43#
發(fā)表于 2025-3-29 01:07:37 | 只看該作者
Atomic and Nanometer-Scale Modification of MaterialsFundamentals and App
44#
發(fā)表于 2025-3-29 06:11:47 | 只看該作者
45#
發(fā)表于 2025-3-29 10:10:18 | 只看該作者
STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,ortant differences between the nano-diodes and the corresponding macroscopic devices. Nevertheless, 10 nm diameter diodes are functional electronic devices. Contacts to nanostructures show the importance of carrier scattering at boundaries (steps). We demonstrate that scattering at steps and the res
46#
發(fā)表于 2025-3-29 12:00:36 | 只看該作者
Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M breaking of weak Si-Si bonds at the surface, (b) structural modifications in a near-surface region of the .-Si:H(P) layers, and (c) changes in the bonding configuration throughout the entire film down to the .-Si:H(P)/.-Si interface. In the latter case, the electrical properties of the ... heteroju
47#
發(fā)表于 2025-3-29 17:37:02 | 只看該作者
High Resolution Patterning with the STM,ists formed by self assembly techniques. The use of such thin films promises to increase further the resolution capability of STM based lithography. Issues related to the implementation of a low voltage lithography tool are discussed. A single tip instrument built with a fast STM like scanner appear
48#
發(fā)表于 2025-3-29 20:56:11 | 只看該作者
Nanoscale Fashioning of Materials, self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.
49#
發(fā)表于 2025-3-30 01:11:44 | 只看該作者
50#
發(fā)表于 2025-3-30 04:36:14 | 只看該作者
NATO Science Series E:http://image.papertrans.cn/b/image/164792.jpg
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-24 07:16
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
蕉岭县| 汕尾市| 大安市| 梨树县| 万全县| 衡阳县| 鄂尔多斯市| 兴山县| 吐鲁番市| 信丰县| 出国| 鹰潭市| 桂平市| 嘉黎县| 绥化市| 鹤峰县| 招远市| 嘉善县| 红安县| 五华县| 凌源市| 孝义市| 霍林郭勒市| 乡宁县| 兴海县| 贵州省| 金门县| 翼城县| 个旧市| 武冈市| 东乡族自治县| 玉田县| 新晃| 固始县| 疏勒县| 固镇县| 惠水县| 南开区| 中江县| 大洼县| 东宁县|