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Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre

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樓主: 海市蜃樓
41#
發(fā)表于 2025-3-28 15:05:20 | 只看該作者
Hochschulpolitische Trends in Europa self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.
42#
發(fā)表于 2025-3-28 22:35:54 | 只看該作者
Georg Kraus,Christel Becker-Kollel resonant frequency, .. =(k/m). = (stiffness/mass). is 5 MHz. We demonstrate nanometer-scale motion of these nanostructures and scanning probe devices. This technology is a significant array-technology that supports on-chip array addressing, control and amplification. Large, dense arrays of 10–20 n
43#
發(fā)表于 2025-3-29 01:07:37 | 只看該作者
Atomic and Nanometer-Scale Modification of MaterialsFundamentals and App
44#
發(fā)表于 2025-3-29 06:11:47 | 只看該作者
45#
發(fā)表于 2025-3-29 10:10:18 | 只看該作者
STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,ortant differences between the nano-diodes and the corresponding macroscopic devices. Nevertheless, 10 nm diameter diodes are functional electronic devices. Contacts to nanostructures show the importance of carrier scattering at boundaries (steps). We demonstrate that scattering at steps and the res
46#
發(fā)表于 2025-3-29 12:00:36 | 只看該作者
Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M breaking of weak Si-Si bonds at the surface, (b) structural modifications in a near-surface region of the .-Si:H(P) layers, and (c) changes in the bonding configuration throughout the entire film down to the .-Si:H(P)/.-Si interface. In the latter case, the electrical properties of the ... heteroju
47#
發(fā)表于 2025-3-29 17:37:02 | 只看該作者
High Resolution Patterning with the STM,ists formed by self assembly techniques. The use of such thin films promises to increase further the resolution capability of STM based lithography. Issues related to the implementation of a low voltage lithography tool are discussed. A single tip instrument built with a fast STM like scanner appear
48#
發(fā)表于 2025-3-29 20:56:11 | 只看該作者
Nanoscale Fashioning of Materials, self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.
49#
發(fā)表于 2025-3-30 01:11:44 | 只看該作者
50#
發(fā)表于 2025-3-30 04:36:14 | 只看該作者
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