期刊全稱(chēng) | Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces | 影響因子2023 | Weronika Walkosz | 視頻video | http://file.papertrans.cn/165/164763/164763.mp4 | 發(fā)行地址 | Nominated as an outstanding contribution by the University of Illinois – Chicago.Offers fundamental results which influence many high temperature and pressure applications.Provides findings to offer i | 學(xué)科分類(lèi) | Springer Theses | 圖書(shū)封面 |  | 影響因子 | .This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline .β.?.Si.3.N.4. and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF).? These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications.? The main contribution of this work is its detailed description of the bonding characteristics of .light. atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before.? The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.. | Pindex | Book 2011 |
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