Titlebook: Application of High Magnetic Fields in Semiconductor Physics; Proceedings of the I G. Landwehr Conference proceedings 1983 Springer-Verlag

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Electron-electron interaction effects in p-type germanium inversion layers,o 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.

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Application of High Magnetic Fields in Semiconductor Physics978-3-540-39472-3Series ISSN 0075-8450 Series E-ISSN 1616-6361

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賞錢

https://doi.org/10.1007/978-3-642-69302-1o 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.

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漫不經(jīng)心

Embryology and the Rise of the Gothic NovelWe have studied the temperature dependence of the quantum Hall effect in modulation-doped InGaAs-InP heterojunctions from 4.2 K to 50 mK. The results are briefly discussed in terms of electron localisation.

Restenosis

Embryology and the Rise of the Gothic NovelIn semiconductor inversion layers with an applied strong magnetic field, the resistance can vanish and the Hall resistance take discrete values h/ie. (i = 1,2,...). We consider the possibility that this might be an occurrence of a macroscopic quantum state.