Titlebook: Analysis and Simulation of Heterostructure Devices; Vassil Palankovski,Rüdiger Quay Book 2004 Springer-Verlag Wien 2004 HBTs.HEMTs.Heteroj

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State-of-the-Art of Materials, Device Modeling, and RF Devices,r geometric arrangement of their atoms in space and therefore cannot be easily studied. Crystalline solids have a perfect periodic arrangement of atoms, which allows them to be easily analyzed. Polycrystalline solids have atomic arrangements between these two extremes. Semiconductor materials are ne

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RF Parameter Extraction for HEMTs and HBTs,quencies, and, last but not least, small-signal equivalent circuit elements for various topologies. It further provides a view of the physical understanding of the bias dependence of small-signal equivalent circuit elements in HEMTs and HBTs in analytcial models and TCAD approaches.

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Introduction,n circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are verysuitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbit/sfor long-range communication and thus cover abroad rangeof applications.

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State-of-the-Art of Materials, Device Modeling, and RF Devices,arly perfect crystalline solids with a small amount of imperfections, such as impurity atoms, lattice vacancies, or dislocations, which can be intentionally introduced to alter their electrical characteristics[305].

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0179-0307 over 25 different simulation examples.Bridges the gap betweCommunication and information systems are subject to rapid and highly so- phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis- tors (HEMT

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