Titlebook: Analog Circuit Design; MOST RF Circuits, Si Willy Sansen,Rudy J. Plassche,Johan H. Huijsing Book 1996 Kluwer Academic Publishers 1996 CAD.C

Orthosis

書目名稱Analog Circuit Design影響因子(影響力)




書目名稱Analog Circuit Design影響因子(影響力)學(xué)科排名




書目名稱Analog Circuit Design網(wǎng)絡(luò)公開度




書目名稱Analog Circuit Design網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Analog Circuit Design被引頻次




書目名稱Analog Circuit Design被引頻次學(xué)科排名




書目名稱Analog Circuit Design年度引用




書目名稱Analog Circuit Design年度引用學(xué)科排名




書目名稱Analog Circuit Design讀者反饋




書目名稱Analog Circuit Design讀者反饋學(xué)科排名

神秘

搖晃

蒙太奇

LURE

A Monolithic 900 MHz Spread-Spectrum Wireless Transceiver in 1-μm CMOSal cellular and other widespread data communications take place today. Such a chip would connect to the antenna on one end, and on the other end provide ports for the input and output of baseband data. At the current level of interest in wireless ICs, though, such an integrated radio is expected soon.

cringe

Low-Power CMOS ΣΔ modulators for speech codingnge over the 300–3400 Hz voice bandwidth. THD is ?72dB for a 40mV. maximum input signal at 95 μA current consumption from a 2.2V supply voltage. The active die area of the modulator is 0.5 mm. in a standard 0.5μm CMOS process.

Traumatic-Grief

Bandpass Delta-Sigma Converters in IF Receivers, due to their high resolution and linearity, bandpass Delta-Sigma converters allow a lower gain in the RF section. An IF sampling receiver architecture utilizing a sixth-order bandpass Delta-Sigma converter is presented and the circuit implementation of the receiver is discussed.

旋轉(zhuǎn)一周

Aspects of Translinear Amplifier Designe current at one terminal of a suitably-biased three-terminal active device and the voltage applied across the remaining two terminals. A trans linear cell not including any directly closed sloops has more recently [3] been called a . (TN).

強(qiáng)所

forecast

Michael Hubbert Dipl.-Betrw., Oberst i. G.6MHz central freq@10kHz bandwidth band-pass modulator. The first uses SC fully-differential circuits in a 1.2μm CMOS double-metal double-poly technology. The second uses SI fully-differential circuits in a 0.8μm CMOS double-metal single-poly technology.