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Titlebook: Amorphous and Nanocrystalline Materials; Preparation, Propert Akihisa Inoue,Koji Hashimoto Book 2001 Springer-Verlag Berlin Heidelberg 2001

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期刊全稱Amorphous and Nanocrystalline Materials
期刊簡稱Preparation, Propert
影響因子2023Akihisa Inoue,Koji Hashimoto
視頻videohttp://file.papertrans.cn/155/154742/154742.mp4
發(fā)行地址This book reports the latest progress in studies of amorphous and nanocrystalline alloys..It contains preparation of bulk amorphous and nanocrystalline alloys, structure, magnetic electronic and chemi
學科分類Advances in Materials Research
圖書封面Titlebook: Amorphous and Nanocrystalline Materials; Preparation, Propert Akihisa Inoue,Koji Hashimoto Book 2001 Springer-Verlag Berlin Heidelberg 2001
影響因子Amorphous and nanocrystalline materials are a class of their own. Their properties are quite different to those of the corresponding crystalline materials. This book gives systematic insight into their physical properties, structure, behaviour, and design for special advanced applications. The book will appeal to researchers, research engineers and advanced students in materials science.
Pindex Book 2001
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Herausforderungen und ihre Bew?ltigungneous — (amorphous+crystalline Ge solid solution) by the addition of Ge. The Ge particle size increases with increasing Ge content from 5–7 nm at 7 at % Ge to 30–40 nm at 40 at % Ge. The amount of Si dissolved in Ge decreases with increasing Ge concentration. At the same time replacement of Ge by Si
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The Anomalous Behavior of Electrical Resistance for Some Metallic Glasses Examined in Several Gas Arption and desorption. On the other hand, the behavior of electrical resistance for a Zr.Al.Ni. glass was strongly dependent on the surface state of the sample, containing the oxidation. The change in electrical resistance after glass transition was also examined in detail and explained by Faber-Zim
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Stress Relaxation and Diffusion in Zr-Based Metallic Glasses Having Wide Supercooled Liquid Regionsation was more pronounced after yielding and its relaxation rate increased with temperature. The stress relaxation was associated with the stress overshoot that is a transient stress-strain phenomenon. The stress overshoot appeared again after the stress relaxation in the course of stretch, and incr
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