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Titlebook: Advances in X-Ray Analysis; Volume 9 Proceedings Gavin R. Mallett,Marie J. Fay,William M. Mueller Conference proceedings 1966 University of

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期刊全稱Advances in X-Ray Analysis
期刊簡稱Volume 9 Proceedings
影響因子2023Gavin R. Mallett,Marie J. Fay,William M. Mueller
視頻videohttp://file.papertrans.cn/151/150217/150217.mp4
圖書封面Titlebook: Advances in X-Ray Analysis; Volume 9 Proceedings Gavin R. Mallett,Marie J. Fay,William M. Mueller Conference proceedings 1966 University of
影響因子The papers presented in this volume of Advances in X-Ray Analysis were chosen from those presented at the Fourteenth Annual Conference on the Applications of X-Ray Analysis. This conference, sponsored by the Metallurgy Division of the Denver Research Institute, University of Denver, was held on August 24,25, and 26, 1965, at the Albany Hotel in Denver, Colorado. Of the 56 papers presented at the conference, 46 are included in this volume; also included is an open discussion held on the effects of chemical com- bination on X-ray spectra. The subjects presented represent a broad scope of applications of X-rays to a variety of fields and disciplines. These included such fields as electron-probe microanalysis, the effect of chemical combination on X-ray spectra, and the uses of soft and ultrasoft X-rays in emission analysis. Also included were sessions on X-ray diffraction and fluor- escence analysis. There were several papers on special topics, including X-ray topography and X-ray absorption fine-structure analysis. William L. Baun contributed considerable effort toward the conference by organizing the session on the effect of chemical combination on X-ray spectra fine structure. A sp
Pindex Conference proceedings 1966
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Lattice Defect Research by Kossel Technique and Deformation Analysis, stresses were observed by Kossel patterns, which are sensitive in their change of shape to lattice distortion. The effects of lattice distortion would appear as splitting, tearing, bending, broadening, disappearance, and shift of Kossel lines. This distortion behavior can be analyzed successfully.
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The Crystalline Perfection of Melt-Grown GaAs Substrates and Ga(As, P) Epitaxial Deposits,on, deposited on GaAs substrates, have been prepared in an open-tube reactor using H., AsC1., and PC1. with GaAs source material. The deposits ranged in composition from GaAs to GaAs.P. and were 10–30 microns thick..X-ray diffraction topography was employed to evaluate the structural perfection of t
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The Application of Cylindrical Geometry for the Determination of Crystal Orientation, back-reflection Laue patterns interpreted with the aid of a table of interplanar angles, is not readily adaptable to noncubics. In general, tables of interplanar angles for noncubics do not exist and if the effort is expended to generate them, such a vast array of angles result that they are virtua
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