Titlebook: Advances in Solid State Physics 48; Rolf Haug Book 2009 Springer-Verlag Berlin Heidelberg 2009 Condensed matter physics.Epitaxy.Ferromagne

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書目名稱Advances in Solid State Physics 48影響因子(影響力)




書目名稱Advances in Solid State Physics 48影響因子(影響力)學科排名




書目名稱Advances in Solid State Physics 48網(wǎng)絡公開度




書目名稱Advances in Solid State Physics 48網(wǎng)絡公開度學科排名




書目名稱Advances in Solid State Physics 48被引頻次




書目名稱Advances in Solid State Physics 48被引頻次學科排名




書目名稱Advances in Solid State Physics 48年度引用




書目名稱Advances in Solid State Physics 48年度引用學科排名




書目名稱Advances in Solid State Physics 48讀者反饋




書目名稱Advances in Solid State Physics 48讀者反饋學科排名

成份

Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxyed synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. Finally, the excellent structure and ultra-high purity are presented by Raman and Photoluminescence spectroscopy.

Override

Simple Ways to Complex Nanowires and Their Applications, simple and rapid ways have to be found for organized nanowire fabrication, because applications often require large area coverage with nanostructures or low production costs for mass fabrication. Furthermore, contact formation to nanowires is often difficult to achieve. One solution is the fabric

Charitable

ZnO Nanostructures: Optical Resonators and Lasingdies on individually in-situ accessible, well-faceted upright pillars grown on a metal interlayer on silicon substrate are presented. We observe in cathodoluminescence directly ultraviolet light standing wave resonator modes, and under pulsed excitation lasing activity based on (e,h) plasma recombin

污穢

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Vulnerary

Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strengthn the photoluminescence for nanoparticles with diameters below $10 nm$. Moreover, the excitonic fine structure splitting caused by the exchange interaction is investigated using time-resolved and magnetic-field-dependent photoluminescence measurements. From these results, it is possible to estimate

Resistance

GROUP

Electrical Spin Injection into Single InGaAs Quantum Dotsuantum dots (QDs) via electrical injection∈dex{spin!injection} from ZnMn(S)Se spin aligners. Single dots can be read out optically through metallic apertures on top of our spin-injection light-emitting diodes (spin-LEDs). A reproducible spin polarization degree close to 100% is observed for a subset

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