Titlebook: Advanced Test Methods for SRAMs; Effective Solutions Alberto Bosio,Luigi Dilillo,Arnaud Virazel Book 2010 Springer-Verlag US 2010 Dynamic

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Mary McMahon,Cristian Bellodi,Davide Ruggero memory array. This action is essential to ensure correct read operations. This chapter presents the study of the effects of resistive-open defects in the pre-charge circuits of SRAMs. Each defect produces a perturbation of the read operation, with an incidence that depends on the location and the r

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Saiprasad Palusa,Jeffrey Wiluszstive-ADOFs that are caused by intra-gate pure open and resistive-open defects. Experiments show that resistive-ADOFs, which are a generalization of ADOFs, require more stringent timing constraints for their sensitization. Several algorithmic solutions are effective to test these faults. These so-lu

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https://doi.org/10.1007/978-94-009-5065-8haviors. These faulty behaviors can be modeled as Slow Write Driver Faults (SWDFs) and Un-Restored Destructive Write Faults (URDWFs). A SWDF involves an erroneous write operation when the same write driver performs two successive write operations with opposite data values. An URDWF is a consequence

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The Kinds of Ordinary Materials,detailed. The first section focuses on threshold voltage deviations within the SRAM core-cell that lead to static and dynamic faults, such as TF and dRDF. Next, it is shown that leakage currents flowing through the pass gates of unselected core-cells may influence the read operation causing leakage

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Energy Flow in the Production of Order, technologies are also more prone to defects, parasitic phenomena, and manufacturing variations, which may drastically reduce the yield. For this reason, fault detection, diagnosis, and defect localization are used in order to repair defective memories thus improving SoC reliability and yield. This

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https://doi.org/10.1007/978-94-009-5065-8(either r0 or r1 in case of d2cIRF2). Results of electrical simulations, performed with a 65-nm SRAM technology, are reported to provide a complete understanding of such a faulty behavior. Finally, possible March test solutions are proposed to detect all d2cIRFs (type 1 and type 2) in SRAM sense amplifiers.