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Titlebook: Zinc Oxide - A Material for Micro- and Optoelectronic Applications; Proceedings of the N Norbert H. Nickel,Evgenii Terukov Conference proce

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書目名稱Zinc Oxide - A Material for Micro- and Optoelectronic Applications
副標(biāo)題Proceedings of the N
編輯Norbert H. Nickel,Evgenii Terukov
視頻videohttp://file.papertrans.cn/1062/1061121/1061121.mp4
概述Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devices.ZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, h
叢書名稱NATO Science Series II: Mathematics, Physics and Chemistry
圖書封面Titlebook: Zinc Oxide - A Material for Micro- and Optoelectronic Applications; Proceedings of the N Norbert H. Nickel,Evgenii Terukov Conference proce
描述Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al A
出版日期Conference proceedings 2005
關(guān)鍵詞Absorption; Transmission; exciton; microscopy; optical properties; optics; spectroscopy; thin films
版次1
doihttps://doi.org/10.1007/1-4020-3475-X
isbn_softcover978-1-4020-3474-9
isbn_ebook978-1-4020-3475-6Series ISSN 1568-2609
issn_series 1568-2609
copyrightSpringer Science+Business Media B.V. 2005
The information of publication is updating

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發(fā)表于 2025-3-21 20:32:12 | 只看該作者
1568-2609 nd p-type doped material, influence of impurities (oxygen, hRecently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requ
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978-1-4020-3474-9Springer Science+Business Media B.V. 2005
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications978-1-4020-3475-6Series ISSN 1568-2609
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NATO Science Series II: Mathematics, Physics and Chemistryhttp://image.papertrans.cn/xyz/image/1061121.jpg
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https://doi.org/10.1007/1-4020-3475-XAbsorption; Transmission; exciton; microscopy; optical properties; optics; spectroscopy; thin films
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發(fā)表于 2025-3-22 21:00:03 | 只看該作者
Norbert H. Nickel,Evgenii TerukovLatest research results on the fabrication and fundamental understanding of ZnO and ZnO based devices.ZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, h
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發(fā)表于 2025-3-22 21:28:15 | 只看該作者
Conference proceedings 2005er deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al A
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