Titlebook: Widegap II–VI Compounds for Opto-electronic Applications; Harry E. Ruda (Assistant Professor) Book 1992 Springer Science+Business Media Do

Gingivitis

Preparation of widegap II–VI homojunction devices by stoichiometry controlntrolled crystals. As shown in Table 13.1, ZnSe and most of the other widegap II–VI compounds showed n-type conductivity, but p-type crystals were not available even with heavy dopings of acceptor impurities. The exception was ZnTe, which showed only p-type conductivity. Because of these characteris

變化

DEVIL

Implanted widegap II–VI materials for electro-optic applications and electron-beam-pumped devicesrier injection light-emitting diodes (laser diodes). However, there are few studies on implantation into widegap II–VI materials [1,2] compared with those into Si and III–V compound materials. In addition, in II–VI materials there are self-compensation problems resulting from lattice defects induced

步兵

Book 1992 applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in re

Barrister

ZnSe growth by conventional molecular beam epitaxy: a review of recent progressffusion sources containing solid-element material. The review is concerned solely with recent advances in the field of conventional MBE growth of ZnSe and does not include discussion on technologically related approaches to ZnSe growth such as metal–organic molecular beam epitaxy (MOMBE), for example.

AGONY

II–VI electroluminescent deviceselief, an extensive research effort in the 1950s and 1960s led to the manufacture of a variety of plastic and ceramic EL lamps. These were of low intensity, but found a range of applications as dark room safelights, exit signs in areas of reduced lighting, clock and dial faces etc.

預(yù)測(cè)

發(fā)酵劑

crescendo

deficiency