Titlebook: What If We Don‘t Die?; The Morality of Immo Peter Hulsroj Book 2015 Springer International Publishing Switzerland 2015 Atemporal versus eve

Jefferson

書目名稱What If We Don‘t Die?影響因子(影響力)




書目名稱What If We Don‘t Die?影響因子(影響力)學科排名




書目名稱What If We Don‘t Die?網(wǎng)絡公開度




書目名稱What If We Don‘t Die?網(wǎng)絡公開度學科排名




書目名稱What If We Don‘t Die?被引頻次




書目名稱What If We Don‘t Die?被引頻次學科排名




書目名稱What If We Don‘t Die?年度引用




書目名稱What If We Don‘t Die?年度引用學科排名




書目名稱What If We Don‘t Die?讀者反饋




書目名稱What If We Don‘t Die?讀者反饋學科排名

忘川河

得罪人

Ex hoc momento pendet aeternitas, understood as the mirror image of immortality, and hence one might not exist without the other. Yet earthly mortality can exist perfectly well without earthly immortality as we have learned at our cost over the millennia. And impossibilities exist! . cannot be dead and undead at the same time, alth

辭職

Immortality Through Parallel Universes,gher interest in the destiny of the other yous than in the destinies of unrelated human beings. Despite all you identical twins you as you are still alone! The assumption of an immense number of parallel universes and parallel yous will, by the way, undermine evolution theory, because the assumption

稱贊

Identity and Infinity,cal or not, there is perhaps a reason to find even more refuge in the . you. And to seek immortality for the . you would not be immoral, even if it by logical implication would mean that other yous would then be saddled with mortality. For the . you there is no better reason to die for another you,

進取心

易怒

帶來墨水

LOPE

Book 2015ultiple universes and multiple yous. .What If We Don’t Die? draws extensively on philosophical and religious thought on the purpose of life and introduces novel perspectives on existence, personality and immortality based, for instance, on quantum mechanics and multiverse theory..

功多汁水

unipolaren MOSFET-Leistungstransistors folgt schlie?lich der IGBT, das heutige ?Arbeitspferd“ der Leistungselektronik. Im IGBT sind die Vorzüge bipolarer Transistoren (Leistung) mit denen des MOSFET (Ansteuerung) vereint. Mit dem IGBT lassen sich derzeit Spannungen bis über 6 kV bzw. Str?me über 3