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Titlebook: Waveguide Optoelectronics; John H. Marsh,Richard M. Rue Book 1992 Springer Science+Business Media Dordrecht 1992 Modulator.Potential.integ

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樓主: detumescence
41#
發(fā)表于 2025-3-28 16:45:12 | 只看該作者
Impact of Low-Dimensional Physics on Optical and Optoelectronic Devices,ate in these notes on the most basic aspects of quantum wells and lower-dimensional systems, leaving detailed descriptions of applications to other authors in this volume. As most of the material exists in other forms., we shall only stress the basic points, referring the reader to more detailed sou
42#
發(fā)表于 2025-3-28 19:04:52 | 只看該作者
43#
發(fā)表于 2025-3-29 00:58:42 | 只看該作者
44#
發(fā)表于 2025-3-29 07:02:48 | 只看該作者
Quantum Well Lasers,l as to new physical phenomena [.]. Since the first investigation of optical properties in quantum wells by Dingle ., [.] the application of quantum well structures to semiconductor laser diodes [.], [.] has received considerable attention because of physical interest as well as its superior charact
45#
發(fā)表于 2025-3-29 08:07:23 | 只看該作者
46#
發(fā)表于 2025-3-29 14:35:03 | 只看該作者
Optical Bistability in Semiconductor Laser Devices, from source to required destination. Investigations of these systems have highlighted the need for efficient fast digital optical gates able to change the state of an optical signal or to hold it in memory ready for further processing. The need for efficient memory elements, with their inherent abi
47#
發(fā)表于 2025-3-29 18:56:30 | 只看該作者
Optical Bistability in Semiconductor Laser Devices, from source to required destination. Investigations of these systems have highlighted the need for efficient fast digital optical gates able to change the state of an optical signal or to hold it in memory ready for further processing. The need for efficient memory elements, with their inherent abi
48#
發(fā)表于 2025-3-29 23:11:43 | 只看該作者
49#
發(fā)表于 2025-3-30 02:42:02 | 只看該作者
50#
發(fā)表于 2025-3-30 06:08:02 | 只看該作者
Neutral Impurity Disordering of Quantum Well Waveguide Devices, multiple quantum well waveguide structures exhibited blue shifts of up to 100 meV in the absorption edge (representing complete disordering) accompanied by substantial changes, > 1%, in the refractive index. The absorption coefficient in partially disordered structures at near band-edge wavelengths
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