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Titlebook: Wafer Bonding; Applications and Tec Marin Alexe,Ulrich G?sele Book 2004 Springer-Verlag Berlin Heidelberg 2004 Compound semiconductors.Diod

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51#
發(fā)表于 2025-3-30 09:43:46 | 只看該作者
Layer Transfer by Bonding and Laser Lift-Off,ominant manufacturing scheme throughout the history of the integrated circuit. This manufacturing paradigm has been adapted to the fabrication of Micro-Electro-Mechanical Systems (MEMS), active-matrix displays, read/write heads for disk drives and optoelectronic devices. Although this single-substra
52#
發(fā)表于 2025-3-30 15:43:56 | 只看該作者
53#
發(fā)表于 2025-3-30 19:27:28 | 只看該作者
54#
發(fā)表于 2025-3-31 00:00:31 | 只看該作者
55#
發(fā)表于 2025-3-31 03:17:08 | 只看該作者
56#
發(fā)表于 2025-3-31 05:28:10 | 只看該作者
Direct Bonding, Fusion Bonding, Anodic Bonding, Wafer Bonding: A Historical Patent Picture of the Wom the second quarter of the 20th century); fusion (wafer) bonding dates mainly from after World War II. Contact bonding covers all types of bonding, realized by the face-to-face contacting of two bodies under various conditions (e.g. vacuum) and after-treatments (e.g. annealing).
57#
發(fā)表于 2025-3-31 09:58:04 | 只看該作者
58#
發(fā)表于 2025-3-31 15:29:31 | 只看該作者
59#
發(fā)表于 2025-3-31 17:50:27 | 只看該作者
,Compound Semiconductor Heterostructures by Smart Cut?: SiC On Insulator, QUASIC? Substrates, InP and gap materials. It is crucial for any industrial development to produce large-size materials with good quality at a reasonable cost. Unfortunately crystal growth of these refractory materials is difficult. For example, SiC can only be obtained using very high temperature sublimation or CVD techniques.
60#
發(fā)表于 2025-4-1 00:21:22 | 只看該作者
Direct Bonding, Fusion Bonding, Anodic Bonding, Wafer Bonding: A Historical Patent Picture of the Wom the second quarter of the 20th century); fusion (wafer) bonding dates mainly from after World War II. Contact bonding covers all types of bonding, realized by the face-to-face contacting of two bodies under various conditions (e.g. vacuum) and after-treatments (e.g. annealing).
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