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Titlebook: Wafer Bonding; Applications and Tec Marin Alexe,Ulrich G?sele Book 2004 Springer-Verlag Berlin Heidelberg 2004 Compound semiconductors.Diod

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發(fā)表于 2025-3-26 20:58:03 | 只看該作者
Wafer Bonding for High-Performance Logic Applications,due to the fundamental physics that constrains the conventional MOSFET. These innovations generally fall into two categories: new materials and new devices. Figure 5.1 depicts one view of the possible path of technological progress starting from present day 100 nm feature size technology [1,2]. In m
32#
發(fā)表于 2025-3-27 02:14:54 | 只看該作者
33#
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發(fā)表于 2025-3-27 13:26:05 | 只看該作者
Direct Bonding, Fusion Bonding, Anodic Bonding, Wafer Bonding: A Historical Patent Picture of the Wart. Direct (glue-less) bonding, which occurs under ambient conditions, has a longer history (from the 19th century) than its patented counterpart (from the second quarter of the 20th century); fusion (wafer) bonding dates mainly from after World War II. Contact bonding covers all types of bonding,
35#
發(fā)表于 2025-3-27 17:26:55 | 只看該作者
36#
發(fā)表于 2025-3-27 20:10:01 | 只看該作者
Basics of Silicon-on-Insulator (SOI) Technology,e crystal. Unlike some other semiconductor materials silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown on it. The excellent electrical and chemical properties of thermally grown SiO. are probably the most
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