標(biāo)題: Titlebook: Variation-Aware Advanced CMOS Devices and SRAM; Changhwan Shin Book 2016 Springer Science+Business Media Dordrecht 2016 CMOS Device Design [打印本頁(yè)] 作者: KEN 時(shí)間: 2025-3-21 18:46
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM影響因子(影響力)
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM影響因子(影響力)學(xué)科排名
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM被引頻次
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM被引頻次學(xué)科排名
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM年度引用
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM年度引用學(xué)科排名
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM讀者反饋
書(shū)目名稱Variation-Aware Advanced CMOS Devices and SRAM讀者反饋學(xué)科排名
作者: HARP 時(shí)間: 2025-3-21 22:04 作者: 領(lǐng)巾 時(shí)間: 2025-3-22 00:40 作者: Arctic 時(shí)間: 2025-3-22 07:52 作者: Fillet,Filet 時(shí)間: 2025-3-22 11:22
Applications in Static Random Access Memory (SRAM)Continuous efforts to shrink the physical size of transistors enable the integration of a larger number of transistors on a single chip.作者: Sigmoidoscopy 時(shí)間: 2025-3-22 14:56
Changhwan ShinOffers an insightful overview of the key techniques in variation-immune CMOS device designs.Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random va作者: plasma 時(shí)間: 2025-3-22 18:17
Quasi-Planar Trigate (QPT) Bulk MOSFETof integrated circuit (IC) chips has intensified the process-induced random variation [i.e., the threshold voltage (..) variation caused by line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)].作者: 溫室 時(shí)間: 2025-3-22 23:24
Tunnel FET (TFET) 300?K) is a main bottleneck in scaling down the power supply voltage (..) as well as extensively reducing the power consumption in integrated circuits (ICs). As the gate voltage lowers the height of the channel potential barrier, the electrons in the source region move into channel region by the thermionic emission process.作者: Neutropenia 時(shí)間: 2025-3-23 04:28
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/v/image/980553.jpg作者: DOLT 時(shí)間: 2025-3-23 09:13
https://doi.org/10.1007/978-94-017-7597-7CMOS Device Designs; Integrated circuits; Line Edge Roughness; MOSFET; Process-Induced Random Variation; 作者: 細(xì)微的差異 時(shí)間: 2025-3-23 11:34 作者: 詞根詞綴法 時(shí)間: 2025-3-23 15:52 作者: Mnemonics 時(shí)間: 2025-3-23 21:28
Changhwan ShinKunden (vgl. Abb. 1), die sich aus den Phasen der Kundenbeziehung ableiten (Stauss 2006, S. 434; Georgi 2010, S. 279 f.), müssen beide Arbeitsschwerpunkte integriert betrachtet werden. Einen Beitrag zur Bew?ltigung der Managementprozesse leistet das Controlling im CRM dem die Aufgabe zukommt, den ho作者: 裂隙 時(shí)間: 2025-3-24 02:15 作者: Forehead-Lift 時(shí)間: 2025-3-24 03:28 作者: 善辯 時(shí)間: 2025-3-24 09:31 作者: dialect 時(shí)間: 2025-3-24 10:50
sbesondere die jüngere Marketing-Literatur ist von zahlreichen Beitr?gen gepr?gt, die sich mit Konstrukten und Ph?nomenen von Kundenbeziehungen, wie Kundenn?he, -orientierung, -zufriedenheit und -bindung besch?ftigen. Mit dem vorliegenden Beitrag wird eine Systematisierung dieser kundenbezogenen The作者: 摻假 時(shí)間: 2025-3-24 15:11
Changhwan Shinndenbeziehungen besch?ftigen; in der Praxis i. d. R. unter Einsatz moderner Informations- und Kommunikationssysteme (vgl. Gr?nroos 1994, 2002; Hippner et al. 2001, Bruhn 2009). Grunds?tzlich lassen sich zwei Diskussions- und Arbeitsschwerpunkte des CRM unterscheiden. Zum einen liegt der Schwerpunkt 作者: 進(jìn)取心 時(shí)間: 2025-3-24 22:57 作者: Implicit 時(shí)間: 2025-3-25 02:40
Changhwan Shinartengesch?fts eine signifikant h?here Komplexit?t aufweist. Dies wiederum und die Tatsache fehlender Liberalisierungen sowie Harmonisierungen birgt erhebliche Ineffizienzen entlang der Wertsch?pfungskette des Kartengesch?fts, die sich sowohl in den Prozessen des kartenbasierten Zahlungsverkehrs als作者: 種植,培養(yǎng) 時(shí)間: 2025-3-25 04:21
Introduction: Barriers Preventing CMOS Device Technology from Moving Forward,by mobile devices that, in turn, have been built on the foundation established in the silicon technology revolution, when the semiconductor industries began to develop complementary metal oxide semiconductor (CMOS) technology on a continuous basis at the pace described in Moore’s law.作者: 尖牙 時(shí)間: 2025-3-25 10:24
Random Dopant Fluctuation (RDF)ree of integration has grown exponentially. However, below the 1 μm technology node, a serious technical issue was encountered that frustrated further shrinking of the gate pitch, namely, the short channel effect (SCE) (Yau in Solid-State Electron 17(10):1059–1063, 1974, [2]; Yan in IEEE Trans Electron Devices 39(7):1704–1710, 1992, [3]).作者: filicide 時(shí)間: 2025-3-25 12:17 作者: 發(fā)怨言 時(shí)間: 2025-3-25 18:56
1437-0387 ce design, such as how to overcome process-induced random va.This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-flu作者: 小母馬 時(shí)間: 2025-3-25 20:21
Introduction: Barriers Preventing CMOS Device Technology from Moving Forward,venient since hand-held mobile electronic devices were developed. This new era, called the era of the “hyper-connected society,” has been facilitated by mobile devices that, in turn, have been built on the foundation established in the silicon technology revolution, when the semiconductor industries作者: 可忽略 時(shí)間: 2025-3-26 02:22
Random Dopant Fluctuation (RDF)ave doubled the density of transistors in integrated circuits (ICs) every two years. This has rapidly increased the performance of ICs because the degree of integration has grown exponentially. However, below the 1 μm technology node, a serious technical issue was encountered that frustrated further作者: 肉體 時(shí)間: 2025-3-26 07:54 作者: 配置 時(shí)間: 2025-3-26 08:51
Quasi-Planar Trigate (QPT) Bulk MOSFETof integrated circuit (IC) chips has intensified the process-induced random variation [i.e., the threshold voltage (..) variation caused by line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)].作者: 不自然 時(shí)間: 2025-3-26 14:38 作者: Genome 時(shí)間: 2025-3-26 17:06 作者: 喚醒 時(shí)間: 2025-3-26 22:22 作者: 抗體 時(shí)間: 2025-3-27 01:43
Identifying and Treating Opioid Misuse in Pediatric Patientss surpassed the risk of death from motor vehicle accidents and gun violence. Most adolescents who meet criteria for OUD do not receive treatment for this problem, and many pediatricians do not adequately screen for substance use. Though room for improvement exists, useful prevention methods, validat作者: fatuity 時(shí)間: 2025-3-27 06:04
Comparison of Ballastless and Ballasted Track for High-Speed Train,high-speed rail between Mumbai and Ahmedabad. Thus, the present paper deals with studying an impact of high-speed train on railway bridges for ballastless and ballasted track. A train has been modeled as the multi-body system, having only vertical degrees of freedom. Both the track system is modeled作者: CARK 時(shí)間: 2025-3-27 10:01 作者: coddle 時(shí)間: 2025-3-27 17:02 作者: adequate-intake 時(shí)間: 2025-3-27 19:36 作者: ENNUI 時(shí)間: 2025-3-28 01:16 作者: Tractable 時(shí)間: 2025-3-28 02:16 作者: Magnitude 時(shí)間: 2025-3-28 06:22 作者: 抗原 時(shí)間: 2025-3-28 13:39
Calibration of the Distance Scale from Cepheids,.55 ± 0.06 mag. The effect of metallicity on the PL relation is discussed. Our Galactic Cepheid distance determinations yield Galactic Cepheid PL relations which are steeper than their LMC counterparts, in all photometric bands, which could be the signature of a metallicity effect. When determining 作者: 補(bǔ)助 時(shí)間: 2025-3-28 14:59 作者: 運(yùn)動(dòng)的我 時(shí)間: 2025-3-28 22:05 作者: PHONE 時(shí)間: 2025-3-29 02:10 作者: extinguish 時(shí)間: 2025-3-29 07:05
