標(biāo)題: Titlebook: VLSI Technology; Fundamentals and App Yasuo Tarui Book 1986 Springer-Verlag Berlin Heidelberg 1986 LSI.VLSI.circuit.development.integrated [打印本頁] 作者: 文化修養(yǎng) 時(shí)間: 2025-3-21 16:08
書目名稱VLSI Technology影響因子(影響力)
書目名稱VLSI Technology影響因子(影響力)學(xué)科排名
書目名稱VLSI Technology網(wǎng)絡(luò)公開度
書目名稱VLSI Technology網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱VLSI Technology被引頻次
書目名稱VLSI Technology被引頻次學(xué)科排名
書目名稱VLSI Technology年度引用
書目名稱VLSI Technology年度引用學(xué)科排名
書目名稱VLSI Technology讀者反饋
書目名稱VLSI Technology讀者反饋學(xué)科排名
作者: Obituary 時(shí)間: 2025-3-22 00:18
VLSI Technology978-3-642-69192-8Series ISSN 0172-5734 作者: 會(huì)議 時(shí)間: 2025-3-22 02:38 作者: 招人嫉妒 時(shí)間: 2025-3-22 05:48 作者: intolerance 時(shí)間: 2025-3-22 09:33
https://doi.org/10.1007/978-3-642-69192-8LSI; VLSI; circuit; development; integrated circuit; semiconductor; transistor作者: HEED 時(shí)間: 2025-3-22 13:13 作者: 放縱 時(shí)間: 2025-3-22 18:08 作者: remission 時(shí)間: 2025-3-23 00:36
Fundamentals of Test and Evaluation,With increasing integration level and circuit complexity toward VLSI, an advanced high technology is required in every part of the production of integrated circuits. Consequently, concerning test and evaluation technology there are several new problems, and it is required to establish new basic technologies for VLSI-testing.作者: Malleable 時(shí)間: 2025-3-23 05:12
Basic Device Technology,One of the most important features of VLSI technique, especially in view of VLSI devices, is the change from the conventional integration of circuits (Integrated Circuit: IC) to the integration of systems itself (Integrated System: IS) as the result of an increased level of integration.作者: 后天習(xí)得 時(shí)間: 2025-3-23 06:54 作者: cochlea 時(shí)間: 2025-3-23 12:05
Yasuo Taruider Schweiz und des Auslandes. Als Sozialist aus dem Osten und als einer der letzten Zeugen aus der Zeit des Neuen Bauens erf?hrt Hans Schmidt hier eine unerwartete Aktualit?t seiner Person. Die früheren Vorbehalte gegenüber dem Kommunisten und Moskauh?rigen sind zum mindesten bei der jungen Generat作者: 芭蕾舞女演員 時(shí)間: 2025-3-23 14:25
Yasuo Taruich von 1965 bis 1975 etwa halbiert und sind seitdem auf diesem niedrigen Niveau geblieben. Dabei sind im Westen die regionalen Unterschiede etwa zwischen den l?ndlichen Kreisen und den Kernst?dten der gro?st?dtischen Agglomerationen immer noch um ein Vielfaches gr??er gewesen als die Ver?nderungen i作者: 泄露 時(shí)間: 2025-3-23 20:04 作者: 破譯密碼 時(shí)間: 2025-3-24 02:15 作者: NAIVE 時(shí)間: 2025-3-24 03:43 作者: 蛙鳴聲 時(shí)間: 2025-3-24 09:46 作者: 耕種 時(shí)間: 2025-3-24 12:50 作者: FIR 時(shí)間: 2025-3-24 18:21 作者: corn732 時(shí)間: 2025-3-24 19:20
Introduction,circuit itself was invented in the process of microminiaturization of electronic circuits. In the early stage the purpose of microminiaturization was literally to make the electronic devices smaller and lighter, especially for use in missiles and satellites.作者: 彎曲道理 時(shí)間: 2025-3-25 02:19
Electron Beam Lithography,n elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing. The electron-beam technology utilized in such a system is immature from the viewpoint of semiconducto作者: 使困惑 時(shí)間: 2025-3-25 06:05 作者: UNT 時(shí)間: 2025-3-25 08:28
Process Technology,he fabrication process for most of these devices, therefore, consists of lithography using electron beam or photo exposure, etching, diffusion, ion implantation, chemical vapour deposition, thermal oxidation, etc., the same as one used for the conventional LSI. On the other hand, the decrease in the作者: Living-Will 時(shí)間: 2025-3-25 15:13
Electron Beam Lithography,eting the demand of fine and high-speed writing. The electron-beam technology utilized in such a system is immature from the viewpoint of semiconductor production. In addition, it essentially requires modern technologies, such as electrooptics, precision machinary and Controlling electronics, a precision moving table, computers and software.作者: 駕駛 時(shí)間: 2025-3-25 17:57 作者: 尊嚴(yán) 時(shí)間: 2025-3-25 22:24
Process Technology, dimension of elemental devices and in the alignment margin requires the high accuracy of processing. Table 6.1 shows typical dimension parameters of MOS device with a gate length of 1 pm. Brief discussions will be given first about the accuracy of processing for fabricating fine structures like those demonstrated in Table 6.1作者: Granular 時(shí)間: 2025-3-26 02:17 作者: 極小 時(shí)間: 2025-3-26 06:45
It Is Only a Drill: The 2019 EP Election Campaign on Facebook in Poland as a Testing Ground Before tctors since it was perceived as an important test of strength before the autumn’s first-order parliamentary voting. The analysis of electoral communication on Facebook allowed to provide another evidence supporting normalisation of political campaigning on social media and demonstrated that parties 作者: 割公牛膨脹 時(shí)間: 2025-3-26 08:39
Nursing the dying persond and when is it thought to occur, to those concerning how the dying person is to be treated. The focus of this chapter will be on the problems raised in the latter category, as these represent the concerns of many nurses in their day-to-day work.作者: 多骨 時(shí)間: 2025-3-26 12:42 作者: recede 時(shí)間: 2025-3-26 18:14 作者: Dappled 時(shí)間: 2025-3-26 22:22 作者: 借喻 時(shí)間: 2025-3-27 02:01
Neurotropic Influenza Virus Infections,meningitis associated with highly pathogenic H5N1 have been reported since the late 1990s. The virulence of the H5N1 virus is largely due to mutation of the hemagglutinin gene, which mediates virus adsorption to host cells. The highly pathogenic H5N1 virus directly spreads from the nasal cavity via the olfactory nerve to the CNS in animal models.作者: 過于平凡 時(shí)間: 2025-3-27 06:57
Fundamentals of Acoustic Cavitation and Sonochemistry,le and oxidants such as OH, O, and H.O. are produced, which is called sonochemical reactions. The pulsation of active bubbles is intrinsically nonlinear. In the present review, fundamentals of acoustic cavitation, sonochemistry, and acoustic fields in sonochemical reactors have been discussed.作者: Gesture 時(shí)間: 2025-3-27 10:45 作者: 舊式步槍 時(shí)間: 2025-3-27 15:55 作者: 尖酸一點(diǎn) 時(shí)間: 2025-3-27 19:16 作者: HUSH 時(shí)間: 2025-3-27 22:51 作者: Hamper 時(shí)間: 2025-3-28 03:14
Photoemission from Quantum Wells in Ultrathin Films, Quantum Wires, and Dots of Optoelectronic Materials,作者: Commemorate 時(shí)間: 2025-3-28 06:24 作者: venous-leak 時(shí)間: 2025-3-28 13:34 作者: 問到了燒瓶 時(shí)間: 2025-3-28 15:45
0937-7433 und ihrer Symmetrieeigenschaften sowie der quantenfeldtheoretischen Grundlagen das Fundament für das weitere Studium von Festk?rperphysik, Kern- und Elementarteilchenphysik.978-3-662-09630-7Series ISSN 0937-7433 Series E-ISSN 2512-5214
