作者: Abrupt 時間: 2025-3-21 21:10 作者: Lamina 時間: 2025-3-22 01:08 作者: Deference 時間: 2025-3-22 04:46 作者: 鳥籠 時間: 2025-3-22 11:31 作者: 審問,審訊 時間: 2025-3-22 14:35 作者: 政府 時間: 2025-3-22 17:45 作者: 懶惰人民 時間: 2025-3-22 23:15
P. N. Favennec,H. L’Haridonr gelitten hatten, vor Wiederaufbauaufgaben gr??ten Ausma?es, die ihre finanziellen Kr?fte nicht nur voll aussch?pften, sondern weit überschreiten. Wenn sich der Gesamtschaden, der durch den Krieg in den westdeutschen Binnenh?fen entstanden ist. nach den Feststellungen des Verbandes der H?fen des Rh作者: 休戰(zhàn) 時間: 2025-3-23 02:17 作者: 得意人 時間: 2025-3-23 08:12 作者: 改進(jìn) 時間: 2025-3-23 12:33
Large Diameter, Undoped Semi-Insulating GaAs for High Mobility Direct Ion Implanted FET Technologyy LEC/PBN crucible techniques. Direct implant FET channels with 1–1.5 × 10. cm. peak donor concentrations exhibit channel mobilities of 4800 to 5000 cm. V. s. in undoped, semi-insulating GaAs substrates, compared with mobilities ranging from 3700 to 4500 cm. V. s. for various Cr-doped GaAs substrate作者: voluble 時間: 2025-3-23 13:56
Growth and Characterization of Semi-Insulating GaAs for Use in Ion Implantationn effects resulting from thermal annealing with Si.N. capping layers are assessed by analysis with secondary ion mass spectroscopy (SIMS). Conclusions drawn from qualification tests, electrical transport and mass spectrographs measurements are correlated with the specific materials growth method use作者: badinage 時間: 2025-3-23 20:45
Book 1980val of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.作者: Incumbent 時間: 2025-3-23 23:13 作者: stressors 時間: 2025-3-24 02:20 作者: 伴隨而來 時間: 2025-3-24 07:20 作者: 傾聽 時間: 2025-3-24 11:08
978-1-4684-9195-1The individual contributors 1980作者: Mets552 時間: 2025-3-24 18:32 作者: 紡織品 時間: 2025-3-24 20:13 作者: 性學(xué)院 時間: 2025-3-25 02:38 作者: CLEAR 時間: 2025-3-25 05:36 作者: 抗原 時間: 2025-3-25 10:47
Influence of Chromium Redistribution on the Electrical Properties of Se and Zn Implanted Cr-Doped Subove, below or close to 100%. By supposing that chromium and some other metallic impurity, which acts as an acceptor, redistribute during annealing, the electrical measurements on the implanted SI GaAs substrates can be understood.作者: 鑒賞家 時間: 2025-3-25 14:28
Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAsan SiO. encapsulant. Sulphur was observed to diffuse rapidly only at low concentrations while chromium was found to redistribute into regions of implantation damage and lattice stress. The details of Cr redistribution are dependent on the sulphur implantation fluence and energy as well as on the specific annealing conditions.作者: stressors 時間: 2025-3-25 17:15 作者: 啜泣 時間: 2025-3-25 21:59 作者: Enervate 時間: 2025-3-26 02:28
H. M. Cox,J. V. Dilorenzoem Mitgliedsbereich der mittelalterlichen Hanse geladen hatte, gestaltete sich zu einer machtvollen Kundgebung deutscher Hafenpolitik. Wer wie ich die beiden Tage miterleben durfte und die Planung für den Ausbau des Hamburger Hafens gesehen hat, wie sie auf der Ausstellung,,Segen des Meeres“ im Mode作者: Anguish 時間: 2025-3-26 06:41 作者: 進(jìn)入 時間: 2025-3-26 09:02
D. Rumsby,R. M. Ware,M. Whittakerem Mitgliedsbereich der mittelalterlichen Hanse geladen hatte, gestaltete sich zu einer machtvollen Kundgebung deutscher Hafenpolitik. Wer wie ich die beiden Tage miterleben durfte und die Planung für den Ausbau des Hamburger Hafens gesehen hat, wie sie auf der Ausstellung,,Segen des Meeres“ im Mode作者: Digest 時間: 2025-3-26 15:16 作者: Sigmoidoscopy 時間: 2025-3-26 20:23
T. Udagawa,M. Higashiura,T. Nakanisillen konnte. Nach einer umfassenden Darstellung der Aufgaben des Amtes Strom- und Hafenbau und seines inneren Aufbaus wurde in weiteren Kapiteln über die Entwicklung des Güterumschlags im Hafen Hamburg w?hrend der Berichtszeit, über die Planung und ihre Konzepte sowie über die Fortschritte bei der V作者: interrupt 時間: 2025-3-26 21:45
Jiro Kasahara,Naozo Watanabestehen will, mu? in allererster Linie in die Hafenst?dte gehen., denn in ihnen hat das hellenistische Leben seine farbenfreudigsten Auspr?gungen gefundene.. Man vergi?t oft, da? die Küsten- und Inselgew?sser der Mittelmeerwelt — wenigstens soweit Griechen ihr Gepr?ge bestimmten —, nicht weniger bele作者: Landlocked 時間: 2025-3-27 01:49 作者: Suggestions 時間: 2025-3-27 07:52
P. N. Favennec,H. L’Haridoniegenden 10 Jahre waren wenig geeignet, Neuerungen zu erproben und sich mit Problemen zu befassen, die sich aus dem Bestreben einer Modernisierung und Rationalisierung des Umschlagsbetriebs ergeben. W?hrend des Krieges bestand hierzu keine M?glichkeit, ja es konnten vielfach nicht einmal die Umschla作者: Infelicity 時間: 2025-3-27 11:51 作者: 平常 時間: 2025-3-27 16:15 作者: 拋媚眼 時間: 2025-3-27 17:46
Influence of Annealing on the Electrical Properties of Semi-Insulating GaAsrsion is attributed to manganese. Si.N. coated wafers, heat-treated in standard conditions for ion implantation post-annealing, do not show manganese and their electrical behaviour involves the balance of both shallow and deep levels present in the as-grown crystal.作者: 和諧 時間: 2025-3-27 23:14 作者: shrill 時間: 2025-3-28 04:27 作者: 拱墻 時間: 2025-3-28 06:48
Heat Treatment Behaviour of Cr Implanted in GaAs SI Material. The presence of a deeper structure for both types of heat treatment shows how important is the influence of the defects on the Cr diffusion mechanism. In the case of face to face annealing, the tail of the Cr distribution demonstrates that in-dif fusion takes place.作者: 切割 時間: 2025-3-28 11:56
tigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and t作者: FEAT 時間: 2025-3-28 17:15
Key Electrical Parameters in Semi-Insulating Materials; The Methods to Determine them in GaAsbe compensated by Cr, can be determined. These two parameters have an important influence on the electrical properties of layers obtained by direct implantation in these substrates and subsequent capped annealing. This last treatment reveals basic properties of the starting substrates and completes their characterization.作者: Munificent 時間: 2025-3-28 19:49
The Growth and Properties of Large Semi-Insulating Crystals of Indium Phosphidematerial with a resistivity greater than 10. ohm-cm, which is thermally stable under epitaxial growth conditions. Etch pit densities for large iron-doped crystals fall in the range 2–5 × 10. cm., increasing along the crystal from seed to tail.作者: 假裝是我 時間: 2025-3-29 00:14
Whither Chromium in Gallium Arsenide?estigative work, progress in understanding has been, until comparatively recently, painfully slow. The reasons for this are examined, setting the scene for consideration of the more exciting developments of the last three or four years.作者: Pigeon 時間: 2025-3-29 06:36 作者: 半身雕像 時間: 2025-3-29 08:07 作者: forecast 時間: 2025-3-29 12:08
Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and SuHigher active layer mobilities, especially near the interface, are obtained when buffer layers are used. The buffer layer also serves to isolate the active layer from problems generated at the substrate-epilayer interface and from some of the vagaries associated with semi-insulating substrates..Seve作者: fastness 時間: 2025-3-29 18:55 作者: prosthesis 時間: 2025-3-29 23:28 作者: CURL 時間: 2025-3-30 03:30 作者: 鐵砧 時間: 2025-3-30 06:08 作者: 難聽的聲音 時間: 2025-3-30 10:09
The Influence of Substrate Properties on the Electrical Characteristics of Ion-Implanted GaAsimplanted and annealed layers. Certain Cr-doped semi-insulating substrates exhibit a marked decrease in sheet resistance during the anneal cycle. We find that the carrier concentration of the converted material increases with the background Si concentration in the starting material. The carrier conc作者: 單色 時間: 2025-3-30 12:25 作者: Charlatan 時間: 2025-3-30 19:35
Redistribution and Vaporization of Cr Impurities in Semi-Insulating GaAsndary ion mass spectrometry and flameless atomic absorption spectrometry. It is concluded that, as a result of the Cr vaporization from the substrate surface, Cr diffuses rapidly towards the surface at 800° C and above. Also, the influence of surface thermal dissociation on the Cr diffusion is discu作者: sparse 時間: 2025-3-30 22:07 作者: 指令 時間: 2025-3-31 02:47 作者: 影響 時間: 2025-3-31 08:30
Influence of Chromium Redistribution on the Electrical Properties of Se and Zn Implanted Cr-Doped Subove, below or close to 100%. By supposing that chromium and some other metallic impurity, which acts as an acceptor, redistribute during annealing, the electrical measurements on the implanted SI GaAs substrates can be understood.作者: 鋪子 時間: 2025-3-31 12:56 作者: Incorruptible 時間: 2025-3-31 17:26
Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAsan SiO. encapsulant. Sulphur was observed to diffuse rapidly only at low concentrations while chromium was found to redistribute into regions of implantation damage and lattice stress. The details of Cr redistribution are dependent on the sulphur implantation fluence and energy as well as on the spe作者: Coma704 時間: 2025-3-31 19:41 作者: 流浪者 時間: 2025-3-31 21:41
2570-3285 en auf diese und viele weitere Fragen in der vollst?ndig überarbeiteten 8. Auflage des Verhaltenstherapiemanuals. .Geschrieben für Psychologische und ?rztliche Psychotherapeuten, Verhaltenstherapeuten, Psychiat978-3-642-55210-6Series ISSN 2570-3285 Series E-ISSN 2570-3293 作者: 貧困 時間: 2025-4-1 05:32
Key Competences and New Literacies978-3-031-23281-7Series ISSN 2366-7516 Series E-ISSN 2366-7524 作者: 磨碎 時間: 2025-4-1 08:29
Acute Graft-Versus-Host Disease (GVHD)iner Absichten begrü?te Erfindung. Andernfalls freilich h?tte Beethoven auch kaum Anreiz und M?glichkeit gesehen, den Spa? zu so hohem Anspruch auszubauen und ihm Hintergründigkeit gerade dadurch zu geben, da? er bis an eine Grenze heranspielt, jenseits derer der Spa? aufh?rt.作者: Ossification 時間: 2025-4-1 13:30
Coupled Nonlinear Thermoelastic Problems,he next section, boundary and initial conditions are attached to the differential equations. In Sect. 5.4, the existence and uniqueness of a solution as well as the convergence of the Bubnov-Galerkin method, are rigorously discussed.
