標題: Titlebook: Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations; Jennifer Rupp,Daniele Ielmini,Ilia Valov Book 2022 Springer Natu [打印本頁] 作者: bradycardia 時間: 2025-3-21 17:14
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations影響因子(影響力)
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations影響因子(影響力)學科排名
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書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations網(wǎng)絡公開度學科排名
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations被引頻次
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations被引頻次學科排名
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations年度引用
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations年度引用學科排名
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations讀者反饋
書目名稱Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations讀者反饋學科排名
作者: Gyrate 時間: 2025-3-21 22:17
Preface,dered by the technological roadmap (ITRS) as a promising concept for the next-generation nonvolatile memory storage and as an important key toward computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only 作者: acrophobia 時間: 2025-3-22 01:29 作者: ARM 時間: 2025-3-22 07:38 作者: Infusion 時間: 2025-3-22 10:45
Review of Mechanisms Proposed for Redox Based Resistive Switching Structures,ator is an oxide. The oxide conducts oxygen via oxygen vacancies. MOM devices in which the insulator conducts intercalated cations are analogous to the ones with mobile oxygen vacancies. Switching, memory and short term hysteresis are three independent phenomena governed by different mechanisms. A n作者: 把手 時間: 2025-3-22 14:53
Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filas in confined spaces down to nanometer or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a 作者: DOSE 時間: 2025-3-22 20:06 作者: GENRE 時間: 2025-3-22 23:32
SiO2-Based Conductive-Bridging Random Access Memory,omising type of resistive nonvolatile memory which relies on metal ion transport and redox reactions to form a persistent conducting filament in a high-resistance film. This effect may be reversed to return the device to a high-resistance state. Such control over resistance can be used to represent 作者: DAMP 時間: 2025-3-23 01:21 作者: 假裝是我 時間: 2025-3-23 09:04
,Effect of O2? Migration in Pt/HfO2/Ti/Pt Structure,rnal influence. We identify that the resistance ratio decreases by 100× in a month time period due to the natural oxidation of the Ti layer in contact of the HfO. layer. We then propose two paths to control both the final properties of the device and the aging process. The first approach consists in作者: 某人 時間: 2025-3-23 11:17
Operating Mechanism and Resistive Switching Characteristics of Two- and Three-Terminal Atomic Switcmechanism is the growth and shrinkage of a metal filament formed between two electrodes, resulting in repeatable resistive switching between high-resistance and low-resistance states, which can be used for next-generation nonvolatile memories. This review focuses on the operating mechanism and resis作者: Introduction 時間: 2025-3-23 15:34 作者: Sleep-Paralysis 時間: 2025-3-23 21:51
Volume Resistive Switching in Metallic Perovskite Oxides Driven by the Metal-Insulator Transition,onvolatile memory market. RRAM is based on the Resistive Switching (RS) effect, where a change in the resistance of the material can be reversibly induced upon the application of an electric field. In this sense, Strongly correlated complex oxides present unique intrinsic properties and extreme sens作者: 連接 時間: 2025-3-24 00:51
Resistive States in Strontium Titanate Thin Films: Bias Effects and Mechanisms at High and Low Temp0?°C and 750?°C show a transition from predominant ionic to electronic conduction and lower conductivity of the thin films compared to the bulk of polycrystalline samples. Defect chemical changes at elevated temperature were investigated by applying a bias voltage. A model is described that successf作者: ZEST 時間: 2025-3-24 06:04
Single-Crystalline SrTiO3 as Memristive Model System: From Materials Science to Neurological and Ps understand the roles of oxygen vacancies and the Schottky barrier in the resistive switching. More importantly, SrTiO.-based memristive devices are used to emulate the neurological and psychological functions of the brain. The synaptic plasticity is achieved with Ni/Nb-SrTiO./Ti memristive devices,作者: organic-matrix 時間: 2025-3-24 10:26 作者: antiandrogen 時間: 2025-3-24 10:40 作者: Deadpan 時間: 2025-3-24 14:50 作者: 一個攪動不安 時間: 2025-3-24 21:57
Nanoscale Characterization of Resistive Switching Using Advanced Conductive Atomic Force Microscopyctric to observe the shape of the filament in three dimensions. The genuine combination of electrical and mechanical stresses via CAFM tip can lead to additional setups, such as pressure-modulated conductance microscopy. In the future, new experiments and CAFM-related techniques may be designed to deepen into the knowledge of resistive switching.作者: 察覺 時間: 2025-3-25 01:04
Reset Switching Statistics of TaOx-Based Memristor,ctive filament (CF) in three different memristor materials (TaO., HfO., and NiO). The high-performance materials tend to exhibit a higher Weibull slope and there are no variation and extra heat generated in the CF before the reset event.作者: 撫育 時間: 2025-3-25 04:33
Review of Mechanisms Proposed for Redox Based Resistive Switching Structures,ecessary condition for memory is presented. Electroforming, filament formation and alteration, . curve crossing are discussed. A new mechanism for unipolar switching is suggested. The metal electrodes are sorted into four types according to the nature of their oxygen transfer. The effect of humidity in the ambient is discussed.作者: nugatory 時間: 2025-3-25 08:00
Optical Memristive Switches,mristive switches on their path from the micro- to the atomic scale. Three memristive effects that are important to the optical field are discussed in more detail. Among them are the phase transition effect, the valency change effect, and the electrochemical metallization.作者: 灌溉 時間: 2025-3-25 15:22
,Effect of O2? Migration in Pt/HfO2/Ti/Pt Structure,g a Pt/HfO./TiO./Ti/Pt OxRRAM stack that is more stable over time with similar resistive states. The obtained OxRRAM stack presents a resistance ratio in the order of 10. with no observable post-fabrication aging degradation.作者: forthy 時間: 2025-3-25 19:31 作者: neurologist 時間: 2025-3-25 21:37
question of finding the order of congruence of ... We present in this chapter several results related to these questions. Unfortunately fairly little is known. For instance, the order of congruence of .. is known only for m ≤ 2 and it is not even known whether .. has a finite order of congruence for作者: 形容詞詞尾 時間: 2025-3-26 03:13 作者: stress-response 時間: 2025-3-26 07:26
Mohammed A. Zidan,An Chen,Giacomo Indiveri,Wei D. Luquestion of finding the order of congruence of ... We present in this chapter several results related to these questions. Unfortunately fairly little is known. For instance, the order of congruence of .. is known only for m ≤ 2 and it is not even known whether .. has a finite order of congruence for作者: pus840 時間: 2025-3-26 10:06
Yuchao Yang,Yasuo Takahashi,Atsushi Tsurumaki-Fukuchi,Masashi Arita,M. Moors,M. Buckwell,A. Mehonic,ehind the intuition that enables a systematic understanding. A unified geometric analysis to understand the working mechanism of deep learning from high-dimensional geometry is offered. Then, different forms of generative models like GAN, VAE, normalizing flows, optimal transport, and so on are desc作者: 范例 時間: 2025-3-26 15:47
S. Bagdzevicius,K. Maas,M. Boudard,M. Burriel of displaying the information produced by a cr scanner consists of showing two-dimensional images, corresponding to maps of the X-ray attenuation coefficient in slices through the body. (Since different tissue types attenuate X-rays differently, such maps provide a good visualization of what is in 作者: 祝賀 時間: 2025-3-26 19:30
Juan Carlos Gonzalez-Rosillo,Rafael Ortega-Hernandez,Júlia Jare?o-Cerulla,Enrique Miranda,Jordi Su?e of displaying the information produced by a cr scanner consists of showing two-dimensional images, corresponding to maps of the X-ray attenuation coefficient in slices through the body. (Since different tissue types attenuate X-rays differently, such maps provide a good visualization of what is in 作者: Insatiable 時間: 2025-3-26 23:40
M. Kubicek,S. Taibl,E. Navickas,H. Hutter,G. Fafilek,J. Fleig space of the fibration ? × .? →.with (.,.) ～ (. + ., (-1) .) being the equivalence relation defining the total space. The leaves are circles, which are 2-fold coverings of the central circle . = 0, except for the central circle itself. If . = . and .:.→ . is the rotation through an angle ., then th作者: 枯燥 時間: 2025-3-27 03:50 作者: 噴出 時間: 2025-3-27 08:07
Ueli Koch,C. Hoessbacher,A. Emboras,J. Leutholdhas been successfully utilized in [Sm2], [P-R], [D1], [E-R1] [Ur], [X13], [X14] and [X15]. Recently, in their monograph [E-R2] Eells-Ratto emphasize the ODE method to the elliptic variational problems. The present chapter is also devoted to the equivariant harmonic maps. Besides single ODE, the redu作者: aspect 時間: 2025-3-27 13:21 作者: shrill 時間: 2025-3-27 16:23
Hong-Yu Chen,Stefano Brivio,Che-Chia Chang,Jacopo Frascaroli,Tuo-Hung Hou,Boris Hudec,Ming Liu,Hangbto understand the working mechanism of deep learning from high-dimensional geometry is offered. Then, different forms of generative models like GAN, VAE, normalizing flows, optimal transport, and so on are desc978-981-16-6048-1978-981-16-6046-7Series ISSN 1612-3956 Series E-ISSN 2198-3283 作者: Asparagus 時間: 2025-3-27 18:31 作者: Respond 時間: 2025-3-28 00:50
Mario Lanza,Umberto Celano,Feng Miaoto understand the working mechanism of deep learning from high-dimensional geometry is offered. Then, different forms of generative models like GAN, VAE, normalizing flows, optimal transport, and so on are desc978-981-16-6048-1978-981-16-6046-7Series ISSN 1612-3956 Series E-ISSN 2198-3283 作者: Texture 時間: 2025-3-28 02:08
Wenhao Chen,Stefan Tappertzhofen,Hugh J. Barnaby,Michael N. Kozickito understand the working mechanism of deep learning from high-dimensional geometry is offered. Then, different forms of generative models like GAN, VAE, normalizing flows, optimal transport, and so on are desc978-981-16-6048-1978-981-16-6046-7Series ISSN 1612-3956 Series E-ISSN 2198-3283 作者: 音的強弱 時間: 2025-3-28 09:23 作者: 嘮叨 時間: 2025-3-28 10:57 作者: FELON 時間: 2025-3-28 17:31 作者: frugal 時間: 2025-3-28 22:14
Tohru Tsuruoka,Tsuyoshi Hasegawa,Kazuya Terabe,Masakazu Aono作者: 過度 時間: 2025-3-29 00:18 作者: beta-carotene 時間: 2025-3-29 03:03
Preface,lean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range, and digital and/or analog volatile and/or nonvolatile information storage. In these devices, the switching relies on redox reactions and mixed作者: 共同給與 時間: 2025-3-29 11:00
Memristive Computing Devices and Applications,fficient hardware realization of neuromorphic and analog computing architectures that differ radically from conventional von Neumann computing architectures. In this chapter, we analyze representative memristor devices and their applications, including mixed signal analog-digital neuromorphic comput作者: Mundane 時間: 2025-3-29 13:48
Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filalaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching. Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device作者: 厭倦嗎你 時間: 2025-3-29 16:42
SiO2-Based Conductive-Bridging Random Access Memory,rated circuits, which greatly lower the barrier for widespread usage and permit integration of memory with silicon-based devices. Our discussion covers materials and electrochemical theory, including the role of counter charge in these devices, as well as the current understanding of the nature of t作者: photopsia 時間: 2025-3-29 21:42 作者: Glycogen 時間: 2025-3-30 01:36
Interface-Type Resistive Switching in Perovskite Materials,emical processes triggered by the application of an external voltage (or current), which ultimately lead to a change in resistance at the interface between the metal electrode and the oxide. Special attention is paid to the material aspects of interface-type switching, and in particular to how the R作者: 正式演說 時間: 2025-3-30 07:04 作者: VEST 時間: 2025-3-30 09:57 作者: 燕麥 時間: 2025-3-30 15:02 作者: Apraxia 時間: 2025-3-30 19:18
feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaeS4eHW2aa0% baaSqaaiaaigdadaWga作者: 整頓 時間: 2025-3-30 21:41
Jennifer Rupp,Ilia Valov,Daniele Ielmini feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaeS4eHW2aa0% baaSqaaiaaigdadaWga作者: Astigmatism 時間: 2025-3-31 02:24 作者: 陪審團 時間: 2025-3-31 08:58 作者: 指耕作 時間: 2025-3-31 11:55 作者: Paradox 時間: 2025-3-31 14:12 作者: Autobiography 時間: 2025-3-31 17:45
Mario Lanza,Umberto Celano,Feng Miaoapproaches with illustrative graphics to present various tec.The focus of this book is on providing students with insights into geometry that can help them understand deep learning from a unified perspective. Rather than describing deep learning as an implementation technique, as is usually the case作者: 似少年 時間: 2025-3-31 23:50
Wenhao Chen,Stefan Tappertzhofen,Hugh J. Barnaby,Michael N. Kozickiapproaches with illustrative graphics to present various tec.The focus of this book is on providing students with insights into geometry that can help them understand deep learning from a unified perspective. Rather than describing deep learning as an implementation technique, as is usually the case
