標題: Titlebook: Rapid Thermal Processing of Semiconductors; Victor E. Borisenko,Peter J. Hesketh Book 1997 Springer Science+Business Media New York 1997 c [打印本頁] 作者: 威風 時間: 2025-3-21 16:35
書目名稱Rapid Thermal Processing of Semiconductors影響因子(影響力)
書目名稱Rapid Thermal Processing of Semiconductors影響因子(影響力)學科排名
書目名稱Rapid Thermal Processing of Semiconductors網(wǎng)絡公開度
書目名稱Rapid Thermal Processing of Semiconductors網(wǎng)絡公開度學科排名
書目名稱Rapid Thermal Processing of Semiconductors被引頻次
書目名稱Rapid Thermal Processing of Semiconductors被引頻次學科排名
書目名稱Rapid Thermal Processing of Semiconductors年度引用
書目名稱Rapid Thermal Processing of Semiconductors年度引用學科排名
書目名稱Rapid Thermal Processing of Semiconductors讀者反饋
書目名稱Rapid Thermal Processing of Semiconductors讀者反饋學科排名
作者: 休閑 時間: 2025-3-21 20:41 作者: 煤渣 時間: 2025-3-22 00:46 作者: 兇猛 時間: 2025-3-22 08:02 作者: 修飾 時間: 2025-3-22 12:04
978-1-4899-1806-2Springer Science+Business Media New York 1997作者: comely 時間: 2025-3-22 15:56
Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,or in silicon are presented and discussed. In particular, the distinct features based on the nonequilibrium conditions created in RTP are emphasized. These phenomena have been investigated for the most part in the solid state for silicon.作者: Chauvinistic 時間: 2025-3-22 19:57
Rapid Thermal Oxidation and Nitridation,e oxide thickness decreases and the gate capacitance increases. In EEPROMs Fowler-Nordheim (FN) tunneling current, which is used to charge and discharge the gate of the memory cell, can slowly degrade the gate dielectric properties through trapped charges in the gate dielectric. The resultant shift 作者: 多嘴多舌 時間: 2025-3-22 22:47 作者: RACE 時間: 2025-3-23 04:56 作者: 截斷 時間: 2025-3-23 06:53 作者: Insul島 時間: 2025-3-23 10:07 作者: 喊叫 時間: 2025-3-23 14:55 作者: adj憂郁的 時間: 2025-3-23 19:56 作者: expound 時間: 2025-3-23 23:51 作者: Fortify 時間: 2025-3-24 05:36
Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,studies using RTP have operated in the thermal flux or heat balance regimes (as defined in Section 1.1). Moreover, the heat balance regime is often preferred with incoherent light and for short heating times (seconds). Solid-state processes initiated in semiconductors by RTP are mainly of thermal or作者: choleretic 時間: 2025-3-24 07:32
Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon,s, and interconnections where low sheet resistivity is important [1,2]. Heavily doped layers are also attractive as diffusion sources for doping the underlying substrate [3]. Finally, polysilicon has been recrystallized successfully into device-quality material for three-dimensional integrated circu作者: 產(chǎn)生 時間: 2025-3-24 12:24
,Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors,tegrated circuits [1, 2]. They have unique and promising optical and electrophysical properties compared to silicon and germanium. However, their utilization is limited by the dramatic influence that thermal processes employed during device fabrication have on these properties based on primarily the作者: 偽造 時間: 2025-3-24 17:23 作者: SSRIS 時間: 2025-3-24 21:01 作者: STEER 時間: 2025-3-25 03:08
Rapid Thermal Chemical Vapor Deposition,f materials, the potential for further development is great. The earliest work was on single-crystal epitaxial silicon by Gibbons and colleagues [1] who referred to the process as limited reaction processing (LRP). One of the principal advantages of RTCVD is that sharp transitions are obtained betwe作者: FELON 時間: 2025-3-25 06:13
it manufacturing environments. Borisenko and Heskethreview theoretical and experimental progress in the field, discussinga wide range of materials, processes, and conditions. They thoroughlycover the work of international investigators in the field.978-1-4899-1806-2978-1-4899-1804-8作者: 粗鄙的人 時間: 2025-3-25 09:53
Transient Heating of Semiconductors by Radiation,s of electron volts to hundreds of mega-electron-volts, surface energy absorption occurs. A higher penetrability is observed with the lighter particles, which includes electrons in the energy range from tens to thousands of electron volts, and photons in the ultraviolet to infrared spectral range.作者: EXTOL 時間: 2025-3-25 14:45
Rapid Thermal Chemical Vapor Deposition,tions of lightly doped epitaxially grown silicon on heavily doped silicon substrates include the fabrication of CMOS devices with reduced latch-up, and high-frequency bipolar junction transistors (BJTs) with a lightly doped base region on a heavily doped buried layer.作者: Obscure 時間: 2025-3-25 18:28
,Diffusion Synthesis of Silicides in Thin-Film Metal—Silicon Structures,and diffusion barriers between aluminum metallization and silicon. Among the variety of approaches for silicide formation, heat-induced diffusion synthesis of thin-film metal—silicon structures appears to be the most practical. It is a simple and effective technique for control of thin film silicide characteristics.作者: 宴會 時間: 2025-3-25 23:57 作者: Nonporous 時間: 2025-3-26 00:56
,Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors, semiconductor decomposition [3], The most acceptable processing conditions are in the heat balance regime, because of minimal temperature gradients and processing simplicity. Overall, a short processing time, typically seconds, has been found optimal for the best properties in doped layers of III–V semiconductor compounds [4–6].作者: 草本植物 時間: 2025-3-26 05:04 作者: Iniquitous 時間: 2025-3-26 11:05 作者: aplomb 時間: 2025-3-26 16:25
,Learning Marriage Ideals and Gendered Citizenship in “God-Fearing” Uganda,n Ugandan churches. While pastors focused marriage teaching on the primacy of a church wedding, sexual purity and harmony through hierarchy, church-going women saw cohesion, spirituality and physical survival as cornerstones of an ideal relationship. By juxtaposing how women saw themselves as having作者: Foreshadow 時間: 2025-3-26 20:22 作者: 內(nèi)向者 時間: 2025-3-27 00:53 作者: PHIL 時間: 2025-3-27 01:38 作者: defile 時間: 2025-3-27 08:28 作者: 繁殖 時間: 2025-3-27 11:05 作者: ellagic-acid 時間: 2025-3-27 16:36 作者: 巨頭 時間: 2025-3-27 20:29
y and theoretically prove its convergence. Experiments on four real datasets demonstrate the efficiency and effectiveness of the proposed OBIMC method. As indicated, our algorithm significantly and consistently outperforms some state-of-the-art algorithms with much less running time.作者: Decongestant 時間: 2025-3-27 22:23 作者: 吃掉 時間: 2025-3-28 05:21
peakers who are learning and being assessed in English. This is often done with an emphasis on reading and writing. ?The vast majority of assessments of English language writing are done through large-scale dir978-3-030-92764-6978-3-030-92762-2作者: incontinence 時間: 2025-3-28 06:56
Book 2019ed through statements and reports issued by intersex rights organisations, the United Nations and the Council of Europe. ..Intersex people are born with sex characteristics that do not fit typical notions of male or female bodies, as a result of which they are stigmatised, marginalised and denied th作者: CHANT 時間: 2025-3-28 14:27 作者: 萬花筒 時間: 2025-3-28 17:01
Book 20081st editiondieser Zeit beobachten wir mit Unbehagen, dass die Fachliteratur glei- sam explodiert ist. Der Leser dürstet scheinbar nach nützlichen Orient- rungspunkten und droht in der Informationsflut zu ertrinken. Dicke W- zer stehen den Leitenden zur Seite und werden oft nach ein paar Seiten frustriert zur S
