標(biāo)題: Titlebook: Radiation Effects in Advanced Semiconductor Materials and Devices; Cor Claeys,Eddy Simoen Book 2002 Springer-Verlag Berlin Heidelberg 2002 [打印本頁] 作者: 贖罪 時間: 2025-3-21 19:11
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書目名稱Radiation Effects in Advanced Semiconductor Materials and Devices被引頻次
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書目名稱Radiation Effects in Advanced Semiconductor Materials and Devices讀者反饋學(xué)科排名
作者: BRAWL 時間: 2025-3-22 00:12 作者: GUEER 時間: 2025-3-22 01:06
Displacement Damage in Group IV Semiconductor Materials,x the percentage fraction). As shown in Chap. 2, a high energetic particle or ion may loose part of its energy by interaction with the nuclei of the target material. This initially results in the creation of vacancy-interstitial pairs, of which only a small fraction escapes direct recombination. The作者: 得罪人 時間: 2025-3-22 07:12
Radiation Damage in GaAs, In addition, the high electron mobility in GaAs (order 7000 cm./Vs [1]) makes the material perfectly suitable for the development of high-speed microwave circuits. How-ever, there is more and more competition of SiGe-based and scaled deep submicron Si microelectronics, which dominate the low-power 作者: Enteropathic 時間: 2025-3-22 09:18
Space Radiation Aspects of Silicon Bipolar Technologies,or) circuits because of their current-drive capability, linearity, low noise and excellent matching characteristics. Furthermore, their microwave performance compares favorably with respect to CMOS, explaining the use in GHz telecommunications applications and low-cost system-on-chip (SOC) solutions作者: 樂章 時間: 2025-3-22 15:37 作者: follicular-unit 時間: 2025-3-22 20:30
GaAs Based Field Effect Transistors for Radiation-Hard Applications,ave applications. The superior operation frequency combined with low high-frequency noise and power dissipation has been exploited for the development of satellite and other telecommunications systems. In this respect, the extreme radiation hardness quoted for these materials is an invaluable plus p作者: pacific 時間: 2025-3-22 23:42 作者: cleaver 時間: 2025-3-23 01:26
,Advanced Semiconductor Materials and Devices—Outlook,s. However, the radiation community also watches the trend in the microelectronics world very carefully. Therefore, new materials and device structures are already in an early phase also studied from a viewpoint of their performance in a radiation envi ronment. This chapter aims at briefly addressin作者: 天空 時間: 2025-3-23 09:12 作者: obligation 時間: 2025-3-23 13:27 作者: PALMY 時間: 2025-3-23 17:48 作者: Visual-Acuity 時間: 2025-3-23 21:15 作者: 優(yōu)雅 時間: 2025-3-23 23:10
Book 2002lso be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.作者: decipher 時間: 2025-3-24 02:25 作者: Esophagitis 時間: 2025-3-24 09:14
Displacement Damage in Group IV Semiconductor Materials,ntified. Usually, increasing the annealing temperature leads to a further clustering or aggregation of the point defects into larger, more stable defects. Small clusters may, however, also directly form in the ‘cluster damage’ region induced by high energy neutrons or ions, where a high density of primary V-I pairs is created.作者: 壕溝 時間: 2025-3-24 12:16
Radiation Damage in GaAs,y through the use of band gap engineering by modifying the III-V alloy or its composition. In this way, the complete range from the near infrared (InGaP) to the blue wavelength range (GaN) can be covered.作者: 不能仁慈 時間: 2025-3-24 16:03 作者: 主動脈 時間: 2025-3-24 21:04 作者: 者變 時間: 2025-3-24 23:29 作者: Ataxia 時間: 2025-3-25 05:39
Radiation Effects in Advanced Semiconductor Materials and Devices978-3-662-04974-7Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: 描述 時間: 2025-3-25 09:41
Cor Claeys,Eddy SimoenThis book summarizes the current knowledge of radiation defects in semiconductors.It will be a useful reference work for scientists involved in semiconductor processing.- This book is important for sp作者: induct 時間: 2025-3-25 12:17 作者: 粗鄙的人 時間: 2025-3-25 17:35 作者: 并入 時間: 2025-3-25 21:24 作者: 牲畜欄 時間: 2025-3-26 01:58
Cor Claeys,Eddy Simoena topic that is usually lost by some at a lower level of sta.Elements of Large-Sample Theory. provides a unified treatment of first- order large-sample theory. It discusses a broad range of applications including introductions to density estimation, the bootstrap, and the asymptotics of survey metho作者: 中止 時間: 2025-3-26 05:08
Cor Claeys,Eddy Simoena topic that is usually lost by some at a lower level of sta.Elements of Large-Sample Theory. provides a unified treatment of first- order large-sample theory. It discusses a broad range of applications including introductions to density estimation, the bootstrap, and the asymptotics of survey metho作者: Indebted 時間: 2025-3-26 09:25
Cor Claeys,Eddy Simoena topic that is usually lost by some at a lower level of sta.Elements of Large-Sample Theory. provides a unified treatment of first- order large-sample theory. It discusses a broad range of applications including introductions to density estimation, the bootstrap, and the asymptotics of survey metho作者: 高歌 時間: 2025-3-26 15:07
Cor Claeys,Eddy Simoena topic that is usually lost by some at a lower level of sta.Elements of Large-Sample Theory. provides a unified treatment of first- order large-sample theory. It discusses a broad range of applications including introductions to density estimation, the bootstrap, and the asymptotics of survey metho作者: 受傷 時間: 2025-3-26 19:13 作者: dainty 時間: 2025-3-26 21:31 作者: Coronation 時間: 2025-3-27 04:05 作者: 廣告 時間: 2025-3-27 07:47 作者: shrill 時間: 2025-3-27 11:55 作者: chance 時間: 2025-3-27 16:58
Space Radiation Aspects of Silicon Bipolar Technologies,ver, solutions for these problems have been implemented in present-day technologies, so that other degradation mechanisms have become more important. In this chapter, an overview will be given related to radiation damage in submicron BJTs and HBTs. First the different type of device ar-chitectures (作者: 充氣球 時間: 2025-3-27 20:48 作者: 慌張 時間: 2025-3-28 01:39
Opto-Electronic Components for Space,d this for Light Emitting Diodes (LED) and Laser Diodes (LD), on the one hand, and Photodiodes or Photodetectors (PD), on the other. A brief introduction to optocouplers is also given. Next, the fundamental and material issues related to radiation degradation are pointed out, followed by a discussio作者: 有限 時間: 2025-3-28 02:51
98, ISBN 0- 387-98502-6..Lehmann, Testing Statistical Hypotheses, 2nd ed. Springer-Verlag New York, Inc., 1997, ISBN 0-387-94919-4.978-1-4419-3136-8978-0-387-22729-0Series ISSN 1431-875X Series E-ISSN 2197-4136 作者: 確定無疑 時間: 2025-3-28 09:28 作者: myalgia 時間: 2025-3-28 13:33 作者: 虛假 時間: 2025-3-28 15:20 作者: Basilar-Artery 時間: 2025-3-28 20:44 作者: EXPEL 時間: 2025-3-29 02:03 作者: 他很靈活 時間: 2025-3-29 06:42 作者: OVERT 時間: 2025-3-29 10:13 作者: 做作 時間: 2025-3-29 14:44
