標(biāo)題: Titlebook: RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors; Keith A. Jenkins Book 2022 Springer Nature Switzerland AG 20 [打印本頁(yè)] 作者: clannish 時(shí)間: 2025-3-21 18:55
書(shū)目名稱RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors影響因子(影響力)
書(shū)目名稱RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors影響因子(影響力)學(xué)科排名
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書(shū)目名稱RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors被引頻次
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書(shū)目名稱RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors讀者反饋
書(shū)目名稱RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors讀者反饋學(xué)科排名
作者: ABOUT 時(shí)間: 2025-3-21 22:13
https://doi.org/10.1007/978-3-030-77775-3Characterization of novel transistors; electrical performance of novel devices; Frequency characteriza作者: FLAX 時(shí)間: 2025-3-22 01:56 作者: 不如樂(lè)死去 時(shí)間: 2025-3-22 05:41 作者: 闡釋 時(shí)間: 2025-3-22 11:12
RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors作者: 喪失 時(shí)間: 2025-3-22 15:38
RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors978-3-030-77775-3作者: 解脫 時(shí)間: 2025-3-22 17:29 作者: 山間窄路 時(shí)間: 2025-3-22 22:03
Measurement of the Frequency Response of Transistors,apacitance which is small compared to the parasitic probe input capacitance, which occurs for back-gated transistors. The frequency response of very low current transistors can be evaluated with direct measurements of power gain as a function of frequency, but input-to-output crosstalk limits the fr作者: Confidential 時(shí)間: 2025-3-23 02:22
Measurement of the Large-Signal Propagation Delay of Single Transistors, to evaluate conventional microelectronics, modification of the structures and measurement techniques can also be used to go beyond performance measurement to assess aging, drift, and time-dependence, which might occur in novel transistors.作者: 飾帶 時(shí)間: 2025-3-23 07:07 作者: 粘土 時(shí)間: 2025-3-23 11:36 作者: debris 時(shí)間: 2025-3-23 16:01
to the Fermi surface and are indeed weakly interacting. Instead of trying to calculate their residual interactions microscopically, which would be a very difficult task, the interactions are parametrized. These parameters enter the expressions for different physical quantities and therefore can be d作者: medium 時(shí)間: 2025-3-23 19:14 作者: A精確的 時(shí)間: 2025-3-24 00:37 作者: fidelity 時(shí)間: 2025-3-24 06:25 作者: 無(wú)脊椎 時(shí)間: 2025-3-24 07:20
Keith A. Jenkinsear future. This progress clearly shows that the contribution of electron crystallography is quite unique, as it enables to reveal the intimate structure of samples with high accuracy but on much smaller samples than have ever been investigated by X-ray diffraction. As a tribute to these tremendous 作者: Orgasm 時(shí)間: 2025-3-24 12:21
Keith A. Jenkinsbonding in order to establish a relation between atomic structure and properties. This includes also modification of the methods for structure analysis (automatic indexing, direct methods, measurement at low and high temperatures) and its application for solving more complex structure, e.g. metal-or作者: 畏縮 時(shí)間: 2025-3-24 17:41
ear future. This progress clearly shows that the contribution of electron crystallography is quite unique, as it enables to reveal the intimate structure of samples with high accuracy but on much smaller samples than have ever been investigated by X-ray diffraction. As a tribute to these tremendous 作者: 濕潤(rùn) 時(shí)間: 2025-3-24 22:37
ble. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understandthe relationship between these measurements and traditional, conventional DC characteristics.?.978-3-030-77777-7978-3-030-77775-3作者: Infect 時(shí)間: 2025-3-25 02:19
Keith A. Jenkinsis quite unique, as it enables to reveal the intimate structure of samples with high accuracy but on much smaller samples than have ever been investigated by X-ray diffraction. As a tribute to these tremendous 978-1-4020-3919-5978-1-4020-3920-1Series ISSN 1568-2609 作者: Thyroxine 時(shí)間: 2025-3-25 05:01
Keith A. Jenkinsis quite unique, as it enables to reveal the intimate structure of samples with high accuracy but on much smaller samples than have ever been investigated by X-ray diffraction. As a tribute to these tremendous 978-1-4020-3919-5978-1-4020-3920-1Series ISSN 1568-2609 作者: insurrection 時(shí)間: 2025-3-25 10:25
The Novel Transistor Characterization Challenge,on centers like banks and airline reservation systems. While the dominant commercial transistor, the silicon-based MOSFET (metal-oxide-silicon field-effect transistor), has been wildly successful in modern electronics, it may not have much prospect of improvement to meet the continual demand for gre作者: 樹(shù)木中 時(shí)間: 2025-3-25 11:59 作者: Solace 時(shí)間: 2025-3-25 17:26 作者: FACET 時(shí)間: 2025-3-25 20:46 作者: Condescending 時(shí)間: 2025-3-26 00:37
Measurement of the AC Linearity of Transistors,of the response of an electronic component to an input signal is well known and documented, but it has usually been considered a subject of concern for analog circuits, where linearity is determined by circuit design as well as by the components of the circuit. However, it is of interest to determin作者: osculate 時(shí)間: 2025-3-26 06:19 作者: FLINT 時(shí)間: 2025-3-26 09:12 作者: intricacy 時(shí)間: 2025-3-26 14:59 作者: 使高興 時(shí)間: 2025-3-26 19:49 作者: 輕快帶來(lái)危險(xiǎn) 時(shí)間: 2025-3-27 00:58 作者: 中古 時(shí)間: 2025-3-27 04:03 作者: defray 時(shí)間: 2025-3-27 07:31
Book 2022modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures.? The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel作者: acrimony 時(shí)間: 2025-3-27 11:54
lectrons are treated as an ideal gas of fermions. The electrons move in an external potential, which is set up by the nuclei and the core electrons. The interactions between the conduction electrons are not considered, a somewhat astonishing fact given that the latter are not weak at all. Despite th作者: Cougar 時(shí)間: 2025-3-27 15:43
Keith A. Jenkinsxperimental reviews see, e.g., [13.1–5] and [13.6–8], respectively. In all cases those systems contain either Ce, Yb, U, or Np as one of their constituents, i.e., there are always 4. or 5. electrons involved. Characteristic examples are: CeAl., CeCu.Si., CeRu.Si., CeCu., CeB., YbAl., YbCu.Si., UBe.,作者: Circumscribe 時(shí)間: 2025-3-27 21:22 作者: Thyroxine 時(shí)間: 2025-3-28 00:50 作者: Offbeat 時(shí)間: 2025-3-28 02:14
Keith A. Jenkinst are relevant for determining structures of organic and ino.During the last decade we have been witness to several exciting achievements in electron crystallography. This includes structural and charge density studies on organic molecules complicated inorganic and metallic materials in the amorphou作者: 堅(jiān)毅 時(shí)間: 2025-3-28 08:02 作者: aphasia 時(shí)間: 2025-3-28 12:25 作者: 言行自由 時(shí)間: 2025-3-28 17:48
Keith A. Jenkinson about chemical bonding and properties..The electrostatic field in a crystal is good characterized, the determining factor is however, the introduction of cations in the ESP of NaCl type structures. Thus precise EDSA data for calculating the distribution of ESP adds to the physical picture about i作者: abstemious 時(shí)間: 2025-3-28 19:44 作者: 背心 時(shí)間: 2025-3-29 00:58
