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標(biāo)題: Titlebook: Quantum Dots: Fundamentals, Applications, and Frontiers; Proceedings of the N Bruce A. Joyce,Pantelis C. Kelires,Dimitri D. Vved Conference [打印本頁]

作者: 搭話    時間: 2025-3-21 17:54
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書目名稱Quantum Dots: Fundamentals, Applications, and Frontiers網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Quantum Dots: Fundamentals, Applications, and Frontiers被引頻次




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書目名稱Quantum Dots: Fundamentals, Applications, and Frontiers年度引用學(xué)科排名




書目名稱Quantum Dots: Fundamentals, Applications, and Frontiers讀者反饋




書目名稱Quantum Dots: Fundamentals, Applications, and Frontiers讀者反饋學(xué)科排名





作者: 細(xì)絲    時間: 2025-3-21 22:35

作者: IRS    時間: 2025-3-22 03:27
Michael Biehl,Florian Muchorough knowledge on the subject, and each chapter covers a specific topic, making this book an essential quick-reference guide for every antenatal clinic.?The book contains chapters on maternal serum screening, noninvasive prenatal testing (NIPT), invasive testing with amniocentesis and CVS, and scr
作者: acetylcholine    時間: 2025-3-22 08:06

作者: MOTIF    時間: 2025-3-22 12:42
Daniel Kandel,Helen R. Eisenbergguidelines for Down syndrome screening with proper citations.The book elucidates a practical method for prenatal screening and detecting Down syndrome in a simple and easy-to-understand language. It provides thorough knowledge on the subject, and each chapter covers a specific topic, making this boo
作者: 缺乏    時間: 2025-3-22 15:39
A. V. Dvurechenskii,J. V. Smagina,V. A. Armbrister,V. A. Zinovyev,P. L. Novikov,S. A. Teys,R. Groetz personal lives. Now, he follows them down the rabbit hole into the unknown, where, like Lewis Carroll’s Alice, they find a dystopian Wonderland in which everyone seems to have gone mad and life functions according to its own crazy logic, throwing up all kinds of obstacles in the search for truth..U
作者: 抱狗不敢前    時間: 2025-3-22 19:08
Catherine Priesternsulting his pocket watch. Intrigued, she follows the rabbit and falls down a long burrow. She finds herself in a strange and surreal place called Wonderland, where she encounters mysterious talking animals (including a hookah-smoking caterpillar), magical food, and a delusional royal court. One of
作者: 有其法作用    時間: 2025-3-22 22:15

作者: adduction    時間: 2025-3-23 03:27

作者: 粗糙濫制    時間: 2025-3-23 08:46
J. Stangl,T. Schülli,A. Hesse,G. Bauer,V. Holy Die Zustandsr?ume dieser Prozesse legten die m?glichen Verm?gensentwicklungen fest. Die n?here Charakterisierung m?glicher Verm?gensentwicklungen erfolgte dabei mit der Wahrscheinlichkeitsverteilung des Verm?gens sowie den Ruinwahrscheinlichkeiten. Dabei wurden stets die Aussagen über den Verm?gens
作者: Heretical    時間: 2025-3-23 11:19
G. Hadjisavvas,Ph. Sonnet,P. C. Kelires Die Zustandsr?ume dieser Prozesse legten die m?glichen Verm?gensentwicklungen fest. Die n?here Charakterisierung m?glicher Verm?gensentwicklungen erfolgte dabei mit der Wahrscheinlichkeitsverteilung des Verm?gens sowie den Ruinwahrscheinlichkeiten. Dabei wurden stets die Aussagen über den Verm?gens
作者: LEVY    時間: 2025-3-23 14:04

作者: ARM    時間: 2025-3-23 21:20
The Mechanism of the Stranski-Krastanov Transitionr is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically-similar but substantially misfitting materials and which exhibit the Stranski—Krastanov transition.
作者: Forage飼料    時間: 2025-3-24 00:01

作者: DOSE    時間: 2025-3-24 06:10

作者: 不遵守    時間: 2025-3-24 09:28
Formation of Two-Dimensional Si/Ge Nanostructures Observed by STMtinguish between the elements Si and Ge. A difference in apparent height is measured in STM images for Si and Ge, respectively. Additionally, different kinds of 2D Si/Ge nanostructures, such as alternating Si and Ge nanorings having a width of 5–10 nm, were grown.
作者: ellagic-acid    時間: 2025-3-24 14:17
X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dotsnd suppression of the scattered intensity close to the absorption edge of one of the chemical elements in the island. We show that for Ge dome-shaped islands the different techniques give similar results.
作者: 免除責(zé)任    時間: 2025-3-24 17:09

作者: 厭倦嗎你    時間: 2025-3-24 21:16

作者: 人充滿活力    時間: 2025-3-25 00:07

作者: 編輯才信任    時間: 2025-3-25 03:25
Formation of Two-Dimensional Si/Ge Nanostructures Observed by STMm was measured using scanning tunneling microscopy (STM). The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at preexisting defects is studied. The step-flow growth mode is used to fabricate Si and Ge nanowir
作者: –DOX    時間: 2025-3-25 10:05
Diffusion, Nucleation and Growth on Metal Surfaceshigh symmetry surface such as Cu(001), a beam of Cu atoms is deposited on the surface. Within a broad range of experimental conditions, the adsorbed atoms diffuse and nucleate into islands. The process of island nucleation and growth in the sub-monolayer regime is studied using both rate equations (
作者: 向宇宙    時間: 2025-3-25 13:46

作者: 飲料    時間: 2025-3-25 18:07
Off-Lattice KMC Simulations of Stranski-Krastanov-Like Growtharlo simulations. Our modified Lennard—Jones system displays the so-called Stranski—Krastanov growth mode: initial pseudomorphic growth ends by the sudden appearance of strain induced multilayer islands upon a persisting wetting layer.
作者: 臭名昭著    時間: 2025-3-25 21:23
Temperature Regimes of Strain-Induced InAs Quantum Dot Formation the growth parameters such as temperature and flux. The QDs are grown using solid-source molecular-beam epitaxy on GaAs and AlAs substrates and investigated with . electron diffraction, x-ray diffraction techniques, and atomic force microscopy. The experimental data of the critical time up to quant
作者: receptors    時間: 2025-3-26 03:28

作者: Cholagogue    時間: 2025-3-26 07:10
Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxyxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams were used. STM studies have shown that ion-beam action during heteroepitaxy leads to decrease in critical film thickness for transition from two-dimensional (2D) to three-dimensional (3D) growth modes, enhancement of 3D island density and na
作者: 下垂    時間: 2025-3-26 11:12

作者: 閃光你我    時間: 2025-3-26 15:33
The Search for Materials with Self-Assembling Properties: The Case of Si-Based Nanostructureses. A good candidate is a metal-semiconductor compounds group, most notably metal silicides. As will be shown below, the disilicides of cobalt and titanium form distinct nanodot arrays on silicon, of a significantly smaller mean size, and substantially improved size and shape uniformity, as compared
作者: HARD    時間: 2025-3-26 17:35
X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dotsrain gradients. Two different routes are followed: in the first approach, the scattered intensities are simulated using numerical fitting to a suitable structure model for the islands (indirect methods). In the second one, the structural data are directly derived from the experimental ones. This dir
作者: BLOT    時間: 2025-3-26 21:35

作者: organism    時間: 2025-3-27 03:21

作者: bioavailability    時間: 2025-3-27 05:55
Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxalation of Auger relaxation rates is detailed. The method is based on expansion of the dot states in a harmonic oscillator basis whose parameters are optimised to improve the convergence rate. This results in at least an order of magnitude reduction in the number of basis states required to represent
作者: GLIDE    時間: 2025-3-27 11:56

作者: staging    時間: 2025-3-27 16:12
Collective Properties of Electrons and Holes in Coupled Quantum Dotss and the role of tunneling. We discuss, in particular, exact diagonalization results for biexciton binding energy, electron-hole localization, magnetic-field induced Wigner molecules, and spin ordering.
作者: Blood-Clot    時間: 2025-3-27 17:49

作者: LUCY    時間: 2025-3-28 00:24
Some Thermodynamic Aspects of Self-Assembly of Quantum Dot Arraysn addition to the critical size of the two-dimensional (2D) islands for the 2D-3D transformation to occur, we find that the wetting depends strongly on the density of the array, the size distribution and the shape of the islands.
作者: 帶子    時間: 2025-3-28 04:12

作者: 疏忽    時間: 2025-3-28 09:09

作者: impaction    時間: 2025-3-28 14:10
Bruce A. Joyce,Pantelis C. Kelires,Dimitri D. VvedBreadth of coverage, from growth fundamentals to applications.Depth of coverage, with sections on atomistic growth fundamentals, self-organization, characterization, electronic and optical properties.
作者: CODA    時間: 2025-3-28 14:56
978-1-4020-3314-8Springer Science+Business Media B.V. 2005
作者: Altitude    時間: 2025-3-28 20:53

作者: 蝕刻    時間: 2025-3-29 02:43

作者: 變化    時間: 2025-3-29 03:11

作者: 天真    時間: 2025-3-29 08:03
Kinetic Modelling of Strained Films: Effects of Wetting and Facetting we show that the dependence of the reference state free energy on film thickness leads to a finite thickness wetting layer, which decreases with increasing lattice mismatch strain. We also show that anisotropic surface tension gives rise to a metastable enlarged wetting layer.
作者: 帶來墨水    時間: 2025-3-29 14:03

作者: PALMY    時間: 2025-3-29 19:01

作者: Outwit    時間: 2025-3-29 23:40
https://doi.org/10.1007/1-4020-3315-XDiffusion; Energie; Gold; cluster; laser; metal; nanostructure; quantum dot; simulation; surfaces; transitions
作者: 量被毀壞    時間: 2025-3-30 00:35
Quantum Dots in the InAs/GaAs System distribution (including scaling behaviour), and two-dimensional to three-dimensional transition effects, with some comments on possible experimental artefacts in this area. We conclude with some comments on QD shape, based mainly on reflection high energy electron diffraction (RHEED) results, but i
作者: Glaci冰    時間: 2025-3-30 04:06
Temperature Regimes of Strain-Induced InAs Quantum Dot Formation process. Due to this intermixing, the strain energy inside the dots is significantly reduced and, accordingly, the driving force for QD formation. As a consequence, the critical time for QD formation increases. At . > 520°C for InAs on GaAs and . > 540°C for InAs on AlAs, desorption of In from the
作者: ARK    時間: 2025-3-30 10:00

作者: Indent    時間: 2025-3-30 15:11

作者: 商談    時間: 2025-3-30 17:22
Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxaet of pyramidal models variations in the dot shape and size can change the rates by up to an order of magnitude. Typical Auger relaxation rates are on a picosecond timescale but the actual value is strongly dependent on the density of electrons outside the dot.
作者: Indecisive    時間: 2025-3-31 00:28
Phase Transitions in Wigner Moleculesedge reconstruction, are addressed. We also consider the creation of Wigner molecules without applying an external magnetic field in an electron system confined within a single quantum dot of large enough size and compare these Wigner molecules with artificial molecules formed in coupled quantum dot
作者: cacophony    時間: 2025-3-31 02:24
Daniel Kandel,Helen R. Eisenbergs diagnose Down syndrome and other aneuploidies in pregnancy, avoid unnecessary testing, and remain safely within medico-legal boundaries. It is also helpful for fetal medicine students. The book helps the read978-981-99-7760-4978-981-99-7758-1
作者: Anecdote    時間: 2025-3-31 06:36
Ofer Biham,Itay Furman,Hanoch Mehl,John F. Wendelken
作者: 時代    時間: 2025-3-31 11:51
A. G. Cullis,D. J. Norris,T. Walther,M. A. Migliorato,M. Hopkinson
作者: chuckle    時間: 2025-3-31 13:38
W. Jaskólski,M. Zieliński,A. Stró?ecka,Garnett W. Bryant,J. Aizpurua
作者: 持久    時間: 2025-3-31 18:03
Guido Goldoni,Filippo Troiani,Massimo Rontani,Devis Bellucci,Elisa Molinari,Ulrich Hohenester
作者: 同義聯(lián)想法    時間: 2025-3-31 22:51
Quantum Dots: Fundamentals, Applications, and FrontiersProceedings of the N
作者: 對待    時間: 2025-4-1 02:03
cally correct way, but also such a way is its . reading. Second, the predicate “nothings” is definitely meaningful. For my present purposes, this is enough. Granted, one may even say that, if one endorses certain ontologico-metaphysical views about impossible . and their identity, the above sentence




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