標(biāo)題: Titlebook: Oxide and Nitride Semiconductors; Processing, Properti Takafumi Yao,Soon-Ku Hong Book 2009 Springer-Verlag Berlin Heidelberg 2009 Epitaxy.L [打印本頁] 作者: 恐怖 時間: 2025-3-21 20:01
書目名稱Oxide and Nitride Semiconductors影響因子(影響力)
書目名稱Oxide and Nitride Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Oxide and Nitride Semiconductors網(wǎng)絡(luò)公開度
書目名稱Oxide and Nitride Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Oxide and Nitride Semiconductors被引頻次
書目名稱Oxide and Nitride Semiconductors被引頻次學(xué)科排名
書目名稱Oxide and Nitride Semiconductors年度引用
書目名稱Oxide and Nitride Semiconductors年度引用學(xué)科排名
書目名稱Oxide and Nitride Semiconductors讀者反饋
書目名稱Oxide and Nitride Semiconductors讀者反饋學(xué)科排名
作者: 懶惰民族 時間: 2025-3-21 22:04
Growth of Nonpolar GaN and ZnO Films,sis is on the typical features of growth, structural properties, and procedures to grow nonpolar films with improved crystal quality. The results of lateral epitaxial overgrowth of nonpolar GaN films are also discussed.作者: 主動 時間: 2025-3-22 00:32
ZnO and GaN Nanostructures and their Applications,thods or by processing. ZnO- and GaN-based nanostructures can successfully be used for fabrications of various sensors, transistors as well as for photonic device applications including light emitting diodes.作者: intrude 時間: 2025-3-22 05:38
Book 2009tures and the applications, and light emitters based on GaN and ZnO are treated succinctly. The unique format of touching both materials in each chapter enables this book to be very fresh, essential, and easy-to-access for readers who have interests in, and need getting more involved with, the most exciting compound semiconductors, ZnO and GaN.作者: Ligament 時間: 2025-3-22 11:54
Structural Defects in GaN and ZnO,ensity have been reported. Detailed techniques including epitaxial lateral over growth and employment of buffers that lead to the growth of high quality films with a low dislocation density are discussed.作者: antenna 時間: 2025-3-22 15:25 作者: 后退 時間: 2025-3-22 20:44 作者: mosque 時間: 2025-3-23 01:14 作者: forestry 時間: 2025-3-23 03:04 作者: 香料 時間: 2025-3-23 09:01
Optical Properties of GaN and ZnO,res, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, wit作者: Muscularis 時間: 2025-3-23 12:57 作者: 加劇 時間: 2025-3-23 16:55
GaN and ZnO Light Emitters,ite-light LEDs, based on these materials are possible. In this chapter, current technologies and researches on GaN- and ZnO-based LEDs are described. A special emphasis is given to the efficiency of the LEDs in the review of the GaN-based LEDs, while current status technologies in LED applications o作者: 哥哥噴涌而出 時間: 2025-3-23 19:47 作者: 補(bǔ)充 時間: 2025-3-23 22:30 作者: ingenue 時間: 2025-3-24 04:19 作者: Spartan 時間: 2025-3-24 09:37 作者: collagenase 時間: 2025-3-24 12:21
978-3-642-10029-1Springer-Verlag Berlin Heidelberg 2009作者: linguistics 時間: 2025-3-24 15:46 作者: 向外 時間: 2025-3-24 20:31 作者: DAUNT 時間: 2025-3-25 00:25
Takafumi Yao,Soon-Ku HongCovers the major developments in wide band gap semiconductors.Deals with the most important material for current applications, GaN, and future optoelectronic applications, ZnO.Integrates materials gro作者: pancreas 時間: 2025-3-25 07:23 作者: 有其法作用 時間: 2025-3-25 10:18
https://doi.org/10.1007/978-3-540-88847-5Epitaxy; Light emitting diode; Nanostructure; Nitride semiconductors; Oxide semiconductors; optical prope作者: DAMP 時間: 2025-3-25 11:56 作者: thyroid-hormone 時間: 2025-3-25 16:49 作者: obligation 時間: 2025-3-25 22:47 作者: interference 時間: 2025-3-26 03:37
Control of Polarity and Application to Devices,ity of grown films is very important in exploring and investigating materials properties of polar wurtzite nitride and oxide films as the properties of films and devices have been strongly affected by the polarity of films. After describing various determination techniques of polarity of wurtzite Ga作者: Throttle 時間: 2025-3-26 07:37
Growth of Nonpolar GaN and ZnO Films,wing pure m-plane films is not easy and other planes coexist parallel to the interface. In this chapter, growth of nonpolar GaN and ZnO films is described. Growth characteristics and properties of nonpolar (a-plane and m-plane) and semipolar GaN films, and nonpolar ZnO films are discussed. The empha作者: 哥哥噴涌而出 時間: 2025-3-26 09:53
Structural Defects in GaN and ZnO,ed. Heteroepitaxial GaN and ZnO films have various kinds of structural defects including misfit dislocations, threading dislocations, stacking faults, nanopipes, and inversion domain boundary, which inevitably affect the properties of the films and devices. Transmission electron microscopy of these 作者: 沒有希望 時間: 2025-3-26 15:15 作者: 波動 時間: 2025-3-26 20:00
Electrical Properties of GaN and ZnO,tivity are easily formed in the materials during growth. These defects are generated as a result of crystal imperfections, which have an influence on the material properties and device performance by introducing shallow or deep levels into the bandgap. In this chapter, first, ohmic contacts to GaN a作者: 開始從未 時間: 2025-3-27 00:17 作者: Accessible 時間: 2025-3-27 02:33
ZnO and GaN Nanostructures and their Applications,ations. The nanostructured materials have unique properties and the devices employing the nanostructures show superior performances when compared with the conventional devices without the nanostructures. Control of shapes and sizes of the nanostructures has been possible by changing the synthetic me作者: Relinquish 時間: 2025-3-27 07:36
J. -H. Songen im Wesentlichen die Rolle eines ?Reise-Führers“ zu, der die R?ume und Stationen der L?sungsgeschichte mit ihren charakteristischen Eigenschaften kennt und der dem Patienten so eine Ahnung über seine Position darin und v.?a. über die Chancen und Risiken des weiteren Weges vermitteln kann. Der weit作者: congenial 時間: 2025-3-27 09:29 作者: phlegm 時間: 2025-3-27 16:57 作者: linguistics 時間: 2025-3-27 18:53 作者: Hectic 時間: 2025-3-27 22:28 作者: Gesture 時間: 2025-3-28 04:25
AC/DC IT Systemsvels are evaluated. There are described most commonly used methods of insulation equivalent resistance measurement. A novel method based on analysis of mean value of phase voltage is presented. Adaptation of a well-known “three voltmeters” procedure is explained.作者: vascular 時間: 2025-3-28 06:37 作者: Between 時間: 2025-3-28 13:43 作者: prosthesis 時間: 2025-3-28 16:57 作者: 認(rèn)為 時間: 2025-3-28 19:15
Auriferous hydrothermal precipitates on the modern seafloor,d wide amount to nearly 2900 t Au and indicate that modified seawater is capable of transporting and depositing significant amounts of gold. In addition, the discovery of gold-rich sulphides actively forming at hydrothermal vents on the modern seafloor has confirmed the existence of gold-bearing flu作者: irreparable 時間: 2025-3-29 02:25
Neptunian Dikes and Fissure Fills: An Overview andthified rock under strong erosional attack, particularly if large voids are present. These ideas are illustrated by an account of the morphology, distribution, fauna, and sediments of “blue holes” (underwater caves) from the Bahama Banks, which we recognize as modern examples of neptunian dikes.作者: Mosaic 時間: 2025-3-29 06:04
QUERDENKEN: Ist Deutschland eine Kastengesellschaft?s ein unre-fiektierter Umgang mit dem Konzept ?Kaste“ sehr problematisch sein kann. Deshalb soll im Folgenden herausgearbeitet werden, ob nicht auch in der deutschen Gesellschaft Facetten gefunden werden k?nnen, die dem in der Alltagssprache verwendeten Konzept der Kasten zuzuordnen sind. Doch wenn 作者: 大氣層 時間: 2025-3-29 07:59 作者: Cantankerous 時間: 2025-3-29 13:03
0072-5285 ry, where most of the complexities and subtleties are present in the finite-dimensional case. My purpose in writing this book is to present a systematic treatment of methods that are useful in the study of such problems. This book is intended for use as a text for upper division and gradu- ate cours
