標(biāo)題: Titlebook: Oriented Crystallization on Amorphous Substrates; E. I. Givargizov Book 1991 Springer Science+Business Media New York 1991 computer.electr [打印本頁] 作者: VERSE 時間: 2025-3-21 19:45
書目名稱Oriented Crystallization on Amorphous Substrates影響因子(影響力)
書目名稱Oriented Crystallization on Amorphous Substrates影響因子(影響力)學(xué)科排名
書目名稱Oriented Crystallization on Amorphous Substrates網(wǎng)絡(luò)公開度
書目名稱Oriented Crystallization on Amorphous Substrates網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Oriented Crystallization on Amorphous Substrates被引頻次
書目名稱Oriented Crystallization on Amorphous Substrates被引頻次學(xué)科排名
書目名稱Oriented Crystallization on Amorphous Substrates年度引用
書目名稱Oriented Crystallization on Amorphous Substrates年度引用學(xué)科排名
書目名稱Oriented Crystallization on Amorphous Substrates讀者反饋
書目名稱Oriented Crystallization on Amorphous Substrates讀者反饋學(xué)科排名
作者: 不給啤 時間: 2025-3-21 20:51 作者: 眼界 時間: 2025-3-22 04:01
E. I. Givargizovgen-Vertikal-Schwei?en die Beobachtung gemacht, da? der zugeführte Schwei?draht zeitweise ohne Lichtbogen abschmolz. Die Untersuchung dieses Vorganges führte zur Entwicklung eines neuen Schwei?verfahrens, des soge- nannten Elektro-Schlacke-Schwei?ens. Gleichzeitig mit dem Schwei?verfahren entwickelt作者: CROAK 時間: 2025-3-22 06:18 作者: 怎樣才咆哮 時間: 2025-3-22 10:45
E. I. Givargizovf stark ab- sorbiert, und die Entladung breitet sich durch Photoeffekt im Gas in einer engen drahtnahen Zone in kleinen Schritten von ca. 1 mm L?nge aus [2]. HUSTER und ZIEGLER [3] hatten dagegen gefunden, da? in der Entladung auch von selbst- l?schenden Z?hlrohren sehr viele Photonen gro?er Reichwe作者: Kinetic 時間: 2025-3-22 16:42
E. I. Givargizovhen Unterbrecher der Phywe AG, G?ttingen, eingesetzt. Zur Regelung der Sekund?rspannung bzw. der Funkenl?nge ist die Spannung am Ladekondensator in fünf Stufen einstellbar. Die maximale L?nge der Funkenstrecke betr?gt etwa 150 mm zwischen Spitze und Platte. Das entspricht einer Spannung von rd. 110 作者: 平息 時間: 2025-3-22 20:43 作者: committed 時間: 2025-3-23 01:01 作者: Melatonin 時間: 2025-3-23 01:36 作者: headlong 時間: 2025-3-23 09:01 作者: 斷言 時間: 2025-3-23 11:49
ngruenter Schmelzpunkt angegeben wird, und zwar wird jede dieser beiden sich widersprechenden Sachverhalte von etwa gleich vielen Forschern beschrie- ben. Dies führt zu der Annahme, da? eine grunds?tzliche Ursache für diese ver- schiedenen Untersuchungsergebnisse vorliegen mu?. Betrachtet man nun di作者: radiograph 時間: 2025-3-23 15:29 作者: 譏笑 時間: 2025-3-23 19:59
Small Particles,the thickness of the films, when formed, is in this range, the films consist of crystalline grains that obviously measure no more than 0.1–1 μm in at least one dimension. Moreover, for thermodynamic reasons (e.g., surface-energy effects), the films tend to agglomerate from small grains that measure 作者: HAVOC 時間: 2025-3-24 00:19 作者: Obedient 時間: 2025-3-24 02:22
Characterization of Oriented Films on Amorphous Substrates,ircuits, and the like. With this objective in mind, much attention must be paid to the electronic properties of the films, such as the mobility and lifetime of charge carriers, leakage currents, conductance, and interface charges and states. These properties depend, in turn, on the microstructure of作者: faction 時間: 2025-3-24 09:28 作者: 不透明 時間: 2025-3-24 10:59
Applications,sulators. Indeed, on one hand, semiconductor properties are most sensitive to crystalline structure—as a rule, perfect single crystals or single-crystalline films are necessary for effective semiconductivity. On the other hand, amorphous substrates are mostly insulating ones. Accordingly, in this ch作者: Bernstein-test 時間: 2025-3-24 18:44
Conclusion,oriented films (including single-crystalline films) on arbitrary substrates compete with each other. At the moment, it is still unclear which will win. Moreover, it is quite likely that some specializations in the pairing of “technique vs. device” (or “circuit”) will be established in the future, so作者: TAG 時間: 2025-3-24 22:58
Other Approaches to Oriented Crystallization on Amorphous Substrates,In addition to artificial epitaxy, there are other approaches to oriented crystallization on amorphous substrates. These approaches differ from artificial epitaxy mainly in mechanism(s) of achievement of oriented growth; however, some of them have much in common with artificial epitaxy in processing apparatus and techniques.作者: FOVEA 時間: 2025-3-25 01:21
Experimental Techniques for Oriented Crystallization on Amorphous Substrates,In Chapters 3 and 4, when considering various approaches to oriented crystallization on amorphous substrates, I mentioned different techniques and/or facilities that offer possibilities for carrying out one or another process of crystallization. In this chapter, I briefly describe the techniques and facilities in a systematic manner.作者: 無瑕疵 時間: 2025-3-25 04:50
Microdeviceshttp://image.papertrans.cn/o/image/704569.jpg作者: 冒煙 時間: 2025-3-25 10:54
https://doi.org/10.1007/978-1-4899-2560-2computer; electronics; integrated circuit; optics; thin film; thin films作者: 大方一點 時間: 2025-3-25 14:39 作者: Heart-Attack 時間: 2025-3-25 18:36
Characterization of Oriented Films on Amorphous Substrates,ircuits, and the like. With this objective in mind, much attention must be paid to the electronic properties of the films, such as the mobility and lifetime of charge carriers, leakage currents, conductance, and interface charges and states. These properties depend, in turn, on the microstructure of the films.作者: 競選運動 時間: 2025-3-25 22:40
Alternatives to Oriented Crystallization on Amorphous Substrates,r films) on amorphous substrates by means of crystallization processes. In view of the broad interest in semiconductor films on insulating substrates, alternatives were and are being developed that have their own advantages and disadvantages with respect to these crystallization processes.作者: 熔巖 時間: 2025-3-26 03:58 作者: audiologist 時間: 2025-3-26 05:14
ktro-Schlacke-Schwei?verfahrens Die grunds?tzliche Arbeitsweise des ESS-Verfahrens kann aus Abb. 1 abgelesen werden. Abb. 1 zeigt die vorbereitete Schwei?stelle. Die Kupferbacken dienen zur Führung des entstehenden Schmelzbades (Schlacke- und Metallbad) und zur Kühlung der Schwei?stelle. Der Schwei?作者: 自負的人 時間: 2025-3-26 10:42 作者: 溺愛 時間: 2025-3-26 13:47 作者: CANDY 時間: 2025-3-26 18:09 作者: 轉(zhuǎn)換 時間: 2025-3-26 22:12
E. I. Givargizover darauf hingewiesen werden, da? die Untersuchungen von HUSTER und ZIEGLER zwar eindeutig zeigten, da? zahlreiche Photonen gro?er Reichweite auftreten, nicht aber auch, da? diese weitreichenden Photonen die Entladung aus- breiten. In der Entladung werden sicher auch Photonen recht geringer Reich- weite erzeu978-3-663-06575-3978-3-663-07488-5作者: GRAIN 時間: 2025-3-27 01:29 作者: Substance-Abuse 時間: 2025-3-27 07:11
E. I. Givargizovstrecke zu leiten. Die Mengenmessung erfolgt mit Rotametern. Sofern die Proben bei h?heren Temperaturen gelagert wurden, sind Umluftw?rme?fen nach DIN 50011, Blatt 1, Abschnitt 2.3, mit Frischluftzufuhr der Firma Heraeus GmbH, Hanau, eingesetzt worden.作者: COMMA 時間: 2025-3-27 10:44 作者: Flagging 時間: 2025-3-27 14:25
E. I. Givargizovstrecke zu leiten. Die Mengenmessung erfolgt mit Rotametern. Sofern die Proben bei h?heren Temperaturen gelagert wurden, sind Umluftw?rme?fen nach DIN 50011, Blatt 1, Abschnitt 2.3, mit Frischluftzufuhr der Firma Heraeus GmbH, Hanau, eingesetzt worden.作者: SENT 時間: 2025-3-27 17:46 作者: justify 時間: 2025-3-28 00:52 作者: Arboreal 時間: 2025-3-28 02:11
Book 1991 submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minim作者: Diatribe 時間: 2025-3-28 09:45
s into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minim978-1-4899-2562-6978-1-4899-2560-2作者: 大看臺 時間: 2025-3-28 11:32 作者: 收集 時間: 2025-3-28 15:13 作者: 偽造 時間: 2025-3-28 20:11
Applications,alline films are necessary for effective semiconductivity. On the other hand, amorphous substrates are mostly insulating ones. Accordingly, in this chapter, we will deal mainly with silicon-on-insulator (SOI *) structures.作者: 清唱劇 時間: 2025-3-29 01:54 作者: tinnitus 時間: 2025-3-29 06:44
Conclusion,Of the variety of approaches and techniques considered in this book, artificial epitaxy (or graphoepitaxy), at this time, seems to have the greatest potential for preparing oriented films on amorphous substrates.作者: Morose 時間: 2025-3-29 09:20 作者: 打算 時間: 2025-3-29 13:54 作者: amygdala 時間: 2025-3-29 15:56
