標(biāo)題: Titlebook: Optical and Electronic Process of Nano-Matters; Motoichi Ohtsu Book 2001 Springer Science+Business Media Dordrecht 2001 Evanescent wave.Op [打印本頁(yè)] 作者: dabble 時(shí)間: 2025-3-21 16:23
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作者: BIPED 時(shí)間: 2025-3-21 23:25
Electron Transport in Semiconductor Quantum Dots,ble to the de Broglie wavelength of electrons. Transport measurements on these nanostructures have revealed a rich variety of phenomena associated with the effects of quantum mechanical confinement [1]. Conductance quantization in one-dimensional quantum point contacts, and resonant tunneling throug作者: 簡(jiǎn)潔 時(shí)間: 2025-3-22 02:52
Electron Energy Modulation with Optical Evanescent Waves,to ultraviolet rays. Many kinds of electron beam devices, including the klystron, traveling wave tube (TWT), and backward wave oscillator (BWO), have been developed [1]. These beam devices have several advantages over semiconductor devices, such as a wide frequency tuning range and higher output pow作者: 陰謀 時(shí)間: 2025-3-22 08:05 作者: Immunization 時(shí)間: 2025-3-22 11:42
Theory of Electronic and Atomic Processes in Scanning Probe Microscopy,ls science, i.e., the science of nano-scale materials has been brought about thanks to the development of SPM. In spite of the rapid development in SPM as an experimental tool, however, a firm theoretical basis for it has not in general been fully established. It is only for the fundamental aspects 作者: Chipmunk 時(shí)間: 2025-3-22 14:37
Tunneling-Electron Luminescence Microscopy for Multifunctional and Real-Space Characterization of Snd these properties are very different from those in macroscopic structures. [1] Progress in crystal growth and micro-process technology has enabled the atomically controlled fabrication of artificial semiconductor nanostructures and devices. These have been actively studied for the purpose of achie作者: arthroscopy 時(shí)間: 2025-3-22 18:38
Near-Field Optical Spectroscopy of Single Quantum Dots, highly localized features and their distributions well beyond the diffraction limit of light [1–7]. The heart of NSOM is a near-field probe, illustrated in Fig. 7.1 which is a metal-coated optical fiber tapered to an opening (aperture) which is much smaller than the wavelength of light. When the pr作者: chemoprevention 時(shí)間: 2025-3-22 23:07 作者: 上腭 時(shí)間: 2025-3-23 04:26
Noncontact Atomic Force Microscopy,face images of both conductors and insulators. For several layered and nonlayered materials [2–5], atomic resolution has been achieved in the contact mode. However, the question has been raised as to whether the AFM operating in the contact mode is really a microscope like the scanning tunneling mic作者: 摻和 時(shí)間: 2025-3-23 07:07
Correlation between Interface States and Structures Deduced from Atomic-Scale Surface Roughness in eliability of ultrathin gate oxides. [2] Because the thickness of the structural transition layer is in the order of 1 nm [3,4] and the amount of electronic defect states in the structural transition layer must be larger than that in bulk SiO., the reliability of gate oxides must be mainly determine作者: 泥沼 時(shí)間: 2025-3-23 10:48 作者: gnarled 時(shí)間: 2025-3-23 14:59 作者: 意外的成功 時(shí)間: 2025-3-23 21:57 作者: reptile 時(shí)間: 2025-3-24 00:53
S. Tarucha,D. G. Austing,T. Fujisawa,L. P. Kouwenhoventandard CMOS process. The voltage-controlled oscillator has already been discussed in chapters 3 to 5. This chapter deals with the other circuit that also operates at the full output frequency, i.e. the frequency divider. The several types of frequency dividers have already been listed is section 2.作者: RAG 時(shí)間: 2025-3-24 06:10
J. Bae,K. Mizunotandard CMOS process. The voltage-controlled oscillator has already been discussed in chapters 3 to 5. This chapter deals with the other circuit that also operates at the full output frequency, i.e. the frequency divider. The several types of frequency dividers have already been listed is section 2.作者: COMMA 時(shí)間: 2025-3-24 09:29
way of the index or the lists of diseases given under the different hosts in Chapter 4. On page 533 you will find a list of headings under which diseases are grouped and described, from Anthracnose to Wilts. In the Host section the key word, for example, rot or blight, is given in capital and small 作者: 謊言 時(shí)間: 2025-3-24 13:23 作者: 統(tǒng)治人類 時(shí)間: 2025-3-24 15:49 作者: 敏捷 時(shí)間: 2025-3-24 20:02
978-90-481-5707-5Springer Science+Business Media Dordrecht 2001作者: 宣稱 時(shí)間: 2025-3-25 02:43 作者: 致詞 時(shí)間: 2025-3-25 06:53 作者: PAEAN 時(shí)間: 2025-3-25 07:40 作者: 魔鬼在游行 時(shí)間: 2025-3-25 12:48
J. Bae,K. Mizunof 2, and can operate at higher frequencies since the critical path can be kept short. The required speed of the subsequent stages is lowered by the prescaler division number, but also the smallest frequency step has increased by that number. For a constant frequency resolution, the reference frequen作者: Ossification 時(shí)間: 2025-3-25 18:58
a very brief summary of the classification and diagnostic characters of each genus before going on to a consideration of diseases caused by the various species. This brief summary is in small type, so that it can be readily skipped by readers uninterested in the technical details. Perhaps I am the 作者: 艦旗 時(shí)間: 2025-3-25 20:59
Electronic and Electromagnetic Properties in Nanometer Scales,ditions, such electromagnetic considerations correspond to of circuit design problems which are usually independent of the microscopic construction of each element. In nanometer scales, however, the construction and function of devices which determine the electronic and electromagnetic properties mi作者: 偽善 時(shí)間: 2025-3-26 03:59
Electron Transport in Semiconductor Quantum Dots,typical capacitance of the island. The one-by-one change in the number of electrons on the island gives rise to oscillations in the tunneling conductance (Coulomb oscillations) when the gate voltage is swept. These oscillations are usually periodic when the number of electrons is “l(fā)arge”. However, i作者: ERUPT 時(shí)間: 2025-3-26 07:55 作者: V洗浴 時(shí)間: 2025-3-26 11:45 作者: HACK 時(shí)間: 2025-3-26 14:53 作者: Confidential 時(shí)間: 2025-3-26 19:15
Correlation between Interface States and Structures Deduced from Atomic-Scale Surface Roughness in ale surface roughness of ultrathin oxide on oxide film thickness was measured. This enabled the effect of the interface structure on the atomic-scale surface roughness to be clarified on an atomic-scale. The effect of the interface structure on the interface electronic states and the valence band st作者: 未開化 時(shí)間: 2025-3-26 21:13 作者: Formidable 時(shí)間: 2025-3-27 03:46 作者: FRAUD 時(shí)間: 2025-3-27 07:45
en higher. Therefore, novel methods, e.g., scanning probe microscopy, should be developed for such the high-resolution diagnostics. The second purpose of this book is to explore the possibility of developing new methods for these diagnostics by utilizing local interaction between materials and electron, photo978-90-481-5707-5978-94-017-2482-1作者: 光滑 時(shí)間: 2025-3-27 12:17 作者: 旋轉(zhuǎn)一周 時(shí)間: 2025-3-27 14:13
Near-Field Optical Spectroscopy of Single Quantum Dots,resolution is not subject to diffraction. The reflected or reemitted light is locally collected by the same aperture (illumination-collection mode; I-C mode) or by a lens in the transmission configuration (illumination mode; I mode) as the probe scans the surface.作者: 口訣法 時(shí)間: 2025-3-27 19:18
Chemical Vapor Deposition of Nanometric Materials by Optical Near-Fields: Toward Nano-Photonic Inteinteraction is sufficiently strong, the sample structure and conformation can be optically modified, and thus this modification can lead to new applications, such as the fabrication of nanometric materials and the manipulation of atoms.作者: 顧客 時(shí)間: 2025-3-28 00:20
trahigh- speed signal transmission and information processing. This miniaturization must be rapidly progressed from now onward. For this progress, the sizes of materials for composing these devices will be also decreased to several nanometers. If such a nanometer-sized material is combined with the 作者: 消滅 時(shí)間: 2025-3-28 02:47 作者: 沙文主義 時(shí)間: 2025-3-28 08:15 作者: 亞當(dāng)心理陰影 時(shí)間: 2025-3-28 13:20
8樓作者: regale 時(shí)間: 2025-3-28 17:16
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8樓作者: 執(zhí)拗 時(shí)間: 2025-3-29 00:16
8樓作者: 存心 時(shí)間: 2025-3-29 06:46
9樓作者: impaction 時(shí)間: 2025-3-29 08:04
9樓作者: ambivalence 時(shí)間: 2025-3-29 13:08
9樓作者: 背心 時(shí)間: 2025-3-29 17:46
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10樓作者: BRAWL 時(shí)間: 2025-3-30 00:38
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10樓作者: 檔案 時(shí)間: 2025-3-30 09:41
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