標(biāo)題: Titlebook: Optical Properties of Narrow-Gap Low-Dimensional Structures; C. M. Sotomayor Torres,J. C. Portal,R. A. Stradlin Book 1987 Plenum Press, Ne [打印本頁] 作者: bankrupt 時間: 2025-3-21 19:56
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書目名稱Optical Properties of Narrow-Gap Low-Dimensional Structures讀者反饋
書目名稱Optical Properties of Narrow-Gap Low-Dimensional Structures讀者反饋學(xué)科排名
作者: Water-Brash 時間: 2025-3-21 23:58 作者: 牙齒 時間: 2025-3-22 02:21
The Rate of Capture of Electrons into the Wells of a Superlatticewell-width. Modifications to this simple model are made which take account of the actual superlattice bandstructure and eigenfunctions, and non-resonant initial states. In contradistinction to other work only weak resonances are predicted, and it turns out that the simple model remains useful.作者: Irritate 時間: 2025-3-22 07:55
0258-1221 , held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and charac作者: 哪有黃油 時間: 2025-3-22 10:12
Crystal Qualities and Optical Properties of MBE Grown GaSb/AlGaSb Superlattices and Multi-Quantum-We. The lower and higher energy peaks were assigned to be due to heavy hole excitons and light hole excitons, respectively, based on a study of the polarization dependence of the guided emission. This assignment was confirmed by a biaxial strain measurement using an asymmetric X-ray diffraction.作者: 易受騙 時間: 2025-3-22 16:00
Energy Relaxation Phenomena in GaAs/GaAlAs Structuresission. However, the onset depends on electron concentration and is different for heterostructures and quantum wells. From intensity dependent cyclotron resonance transmission experiments Landau level lifetimes between 0.2 ns and 1 ns depending on the electron density are found in agreement with data from time-resolved photoluminescence.作者: 剝削 時間: 2025-3-22 17:08
Book 1987m July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization作者: 大洪水 時間: 2025-3-22 23:21
Magnetic Field Effects on the Electronic States of Narrow-Gap Low-Dimensional Structureshe subbands and, when a magnetic field is present, a complicated Landau level pattern. This will be exemplified by results of calculations performed with the envelope-function method for InAs-GaSb and HgTe-CdTe heterostructures. Current problems in the interpretation of magneto-optical and Quantum Hall experiments are discussed.作者: Strength 時間: 2025-3-23 03:08 作者: 排他 時間: 2025-3-23 08:07
The MBE Growth of InSb-Based Heterojunctions and LDS1] to exhibit an order of magnitude higher electron mobilities than is observed in corresponding GaAs/GaAlAs devices whilst CdTe/InSb quantum-well structures are also attractive for use as infra-red sources and detectors. Studies of LDS based on the InAs/InSb and InAlSb/InSb material systems have also been reported [3,4].作者: 逢迎春日 時間: 2025-3-23 12:12
Quantum Wells and Superlattices of Diluted Magnetic Semiconductorse narrow gap semiconductors, with the band structure analogous to that of Hg.Cd.Te, whereas Cd.Mn.Te and Zn.Mn.Se are examples II VI of wide-gap DMS. In Table 1. we give a list of all the A.Mn.B DMS materials, together with their crystal structures and ranges of compositions within which growth of single phase alloys has been successful.作者: canvass 時間: 2025-3-23 16:14
NATO Science Series B:http://image.papertrans.cn/o/image/702649.jpg作者: 繁榮地區(qū) 時間: 2025-3-23 18:02
https://doi.org/10.1007/978-1-4613-1879-8Raman scattering; crystal; cyclotron; electron; energy; growth; high pressure; laser; magnetic field; materia作者: Formidable 時間: 2025-3-24 01:07
Growth and Properties of Hg-Based Superlatticesuch as HgTe-ZnTe, Hg.Zn.Te-CdTe and Hg.Mn.Te-CdTe. These superlattices have been grown in order to investigate the type III-type I transition in these superlattices. Thus a special attention has been given to the study of magneto transport properties.作者: wall-stress 時間: 2025-3-24 05:54 作者: Desert 時間: 2025-3-24 08:51 作者: 擦掉 時間: 2025-3-24 11:02 作者: Muscularis 時間: 2025-3-24 16:58
Optical Properties of Narrow-Gap Low-Dimensional Structures978-1-4613-1879-8Series ISSN 0258-1221 作者: CBC471 時間: 2025-3-24 22:44 作者: 表皮 時間: 2025-3-25 00:23
Optical Nonlinearities in Narrow-Gap SemiconductorsWe discuss the origin of band gap resonant refractive non-linearities in narrow gap semiconductors and describe the excess carrier dynamics. The band gap dependence and transient nature of these non-linearities are illustrated by nonlinear etalon, optical bistability and self-defocusing results in CdHgTe and InSb at room temperature.作者: Parameter 時間: 2025-3-25 06:24
Optical Nonlinearities in Low-Dimensional StructuresFabrication of semiconductor microstructures opens up new opportunities in optics. In quantum wells, the resulting particle-in-a-box behaviour leads to new optical properties near the optical absorption edge that are applicable at room temperature in GaAs/GaAlAs and other materials systems.作者: 熟練 時間: 2025-3-25 11:16 作者: BIPED 時間: 2025-3-25 13:23
Magnetic Field Effects on the Electronic States of Narrow-Gap Low-Dimensional Structuresterpretation of all experiments. In heterostructures, the coupling of bands with different character produces a strongly non-parabolic dispersion of the subbands and, when a magnetic field is present, a complicated Landau level pattern. This will be exemplified by results of calculations performed w作者: faction 時間: 2025-3-25 18:04 作者: adipose-tissue 時間: 2025-3-26 00:04
MOCVD-Growth, Characterization and Application of III-V Semiconductor Strained Heterostructuresapor deposition growth technique. Photoluminescence, SIMS and Auger measurements showed the high quality optical and electrical properties of these layers. Buried ridge structure lasers emitting at 1.3 μm have been fabricated from the GaInAsP-InP double heterojunction grown on a GaAs substrate. MESF作者: 乞討 時間: 2025-3-26 02:35 作者: 正論 時間: 2025-3-26 04:53
The MBE Growth of InSb-Based Heterojunctions and LDSially important device applications [1,2]. For example, HEMT-type structures based on the CdTe/InSb material combination are theoretically predicted [1] to exhibit an order of magnitude higher electron mobilities than is observed in corresponding GaAs/GaAlAs devices whilst CdTe/InSb quantum-well str作者: 一小塊 時間: 2025-3-26 10:21
Optical Properties of HgTe-CdTe Superlatticeses offer a number of potential advantages over alloys of HgTe-CdTe for application in IR detectors and sources.. In the alloy the band gap is controlled by the relative composition of Hg to Cd, while in the superlattice, the band gap is controlled by the thickness of the layers making up the superla作者: 支形吊燈 時間: 2025-3-26 12:49
Strained Layer Superlattices of GaInAs-GaAstaxy (M.B.E.) and Metalorganic Vapor Phase Epitaxy (M.O.V.P.E.) has allowed the growth of numerous strained systems. This development is due to the potential interest of these structures for device applications. Their use broadens the choice of epitaxial materials on a given substrate by removing th作者: CAJ 時間: 2025-3-26 19:30
Properties of PbTe/Pb1-xSnxTe Superlatticesed region of the electromagnetic spectrum. Either liquid phase epitaxy (LPE), hot-wall epitaxy(HWE) or molecular beam epitaxy (MBE) have been used to grow double hetero junction lasers (Preier, 1979) . Recently, also PbTe/PbSnTe multiquantum well (MQW) lasers for pulsed operation at 6 μm and tempera作者: aerial 時間: 2025-3-26 21:00
Quantum Wells and Superlattices of Diluted Magnetic Semiconductorsn the most thoroughly understood group of these materials, i.e., on II–VI compounds containing substitutional Mn. . Of those, Hg.Mn.Te and Hg.Mn.Se are narrow gap semiconductors, with the band structure analogous to that of Hg.Cd.Te, whereas Cd.Mn.Te and Zn.Mn.Se are examples II VI of wide-gap DMS. 作者: landmark 時間: 2025-3-27 04:37
Energy Relaxation Phenomena in GaAs/GaAlAs Structuresoscillations, the far infrared emission and photoluminescence spectra. A quite general behavior of the electron heating ?T = T. ? T. as a function of the input power per electron P. is found: .. The corresponding energy relaxation times in the range of nsec are independent of the electron temperatur作者: 慢慢啃 時間: 2025-3-27 09:10 作者: misanthrope 時間: 2025-3-27 09:43 作者: Working-Memory 時間: 2025-3-27 15:18 作者: syncope 時間: 2025-3-27 19:10
Cyclotron Resonance of Inversion Electrons on InSbn various materials in recent years.. The most interesting feature on narrow-gap semiconductors like InSb or Hg.Cd.Te is the coupling of valence and conduction band which results from their small gap energy. As a consequence the conduction band is strongly nonparabolic, i.e., the apparent mass stron作者: DRILL 時間: 2025-3-27 22:11 作者: 大猩猩 時間: 2025-3-28 03:20 作者: exercise 時間: 2025-3-28 06:48
Strained Layer Superlattices of GaInAs-GaAses on a graded buffer layer matching this mean parameter. For the same reason, they constitute interesting buffer layers between two largely mismatched materials [3]. Moreover, the modifications of the properties of the grown semiconductors by the built-in strains they experience make them potential作者: CEDE 時間: 2025-3-28 12:47 作者: 可忽略 時間: 2025-3-28 15:51 作者: chondromalacia 時間: 2025-3-28 22:18 作者: receptors 時間: 2025-3-29 00:50
0258-1221 illustrated in Part IV. A review of devices based on epitaxial narrow-gap materials defines a frame of reference for future ones based on two-dimensional narrow978-1-4612-9047-6978-1-4613-1879-8Series ISSN 0258-1221 作者: finale 時間: 2025-3-29 06:00 作者: STIT 時間: 2025-3-29 09:00 作者: 假裝是我 時間: 2025-3-29 12:57 作者: SLING 時間: 2025-3-29 16:20 作者: Bph773 時間: 2025-3-29 23:31 作者: 有花 時間: 2025-3-30 00:44
Multicriteria Decision-Making Tool for Optimal Water Resource Managementas elaborated. Its distinctive feature is the possibility to investigate regimes with sudden, discontinuous changes or phase transitions as a result of small, continuous changes in variables that influence the water system. Model permits to determine the conditions for sustainable development and th作者: Euphonious 時間: 2025-3-30 06:23
The Problem of Domestic Abuse and Homicide,on of linear algebra as a means of introducing the summation convention in a systematic manner. Since this gets used in computations, the reader may wish to take the opportunity to become familiar with it.作者: 蔓藤圖飾 時間: 2025-3-30 10:56 作者: 撕裂皮肉 時間: 2025-3-30 13:57 作者: Breach 時間: 2025-3-30 19:25
https://doi.org/10.1007/978-981-10-2051-3Due to underutilized and neglected crop, negligible genetic resources utilized and developed grass pea genotype resistant against diseases and pests. This chapter reviews the present status of economic importance, genetic transformation, and genetic and genomic resources for developing biotic stress作者: 凌辱 時間: 2025-3-30 20:46
Amar Achera?outioned for a bit with her family at Lyme Regis, journeyed once with her mother and sister to Stoneleigh Abbey in Warwickshire; on occasion, she visited London, and then spent her final years in Chawton, Hampshire. The distance between the author’s birthplace and these other stops on her life’s journ作者: 生存環(huán)境 時間: 2025-3-31 02:19
How to Insure Reliability and Delay in Multi-controller Deploymentand the switches which under its management. The concrete implementation is divided into the following steps: First, model the network, consider the stability of the forwarding plane and the delay between the switch and the controller to establish the optimization target. And then propose a two-stag作者: convert 時間: 2025-3-31 06:50 作者: 剛開始 時間: 2025-3-31 09:22
QEEG-Guided Neurofeedback for Autism: Clinical Observations and Outcomes,作者: 手工藝品 時間: 2025-3-31 13:50 作者: 常到 時間: 2025-3-31 21:15
analyst, hiding the sensitive information present in the original data. The analysts perform data mining techniques on the distorted dataset. Accuracy is measured using classification and clustering techniques generated on distorted data is relative to the original, thus privacy is achieved. Compar
