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標(biāo)題: Titlebook: Optical Properties of Low Dimensional Silicon Structures; Daniel C. Bensahel,Leigh T. Canham,Stephano Ossici Book 1993 Kluwer Academic Pub [打印本頁]

作者: 不足木    時間: 2025-3-21 16:44
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書目名稱Optical Properties of Low Dimensional Silicon Structures讀者反饋學(xué)科排名





作者: 魔鬼在游行    時間: 2025-3-21 23:16

作者: LAP    時間: 2025-3-22 01:26

作者: LINES    時間: 2025-3-22 05:15
Ph. Dumas,M. Gu,C. Syrykh,F. Salvan,J. K. Gimzewski,O. Vatel,A. Hallimaoui offering higher levels of effectiveness, communication and personal freedom. The key common part to all potential solutions fulfilling these requirements is wearable embedded systems, with longer periods of autonomy, offering wider functionality, more communication possibilities and increased compu
作者: Trabeculoplasty    時間: 2025-3-22 09:54

作者: 執(zhí)    時間: 2025-3-22 15:48
Microporous Silicon: Formation Mechanism and Preparation Method,the porous region due to quantum confinement, is discussed. The second section is dedicated to the methods of sample preparation and the influence of preparational parameters on the morphology of the porous layer.
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作者: 厭食癥    時間: 2025-3-23 00:21
Fabrication of Si Nanostructures for Light Emission Study,ll behaved and ordered Si nanostrctures are desirable for facilitating the characterization process and the interpretation of experimental results. A combination of high resolution electron beam lithography, anisotropic reactive ion etching (RIE), and thermal oxidation was shown to yield such well b
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作者: 殘廢的火焰    時間: 2025-3-23 11:52
Electronic Charge Trapping Effects in Porous Silicon,ger spectroscopy) and the photoluminescence (PL) of p-Si are measured before and after the electron irradiation. A different behavior is observed on samples with various porosity. High porosity samples show surface charge accumulation during irradiation and PL degradation after treatment, while low
作者: 從屬    時間: 2025-3-23 17:33
Mechanical, Optical and Electrical Properties of Porous Silicon Prepared under Clean Conditions,at the asanodised layers are in a compressive state, and that after annealing the stress changes and plastic deformation takes place. The film resistivities are greater than 10.Ω-cm. Photoluminescence stability from LEPOS is demonstrated on the scale of months. Finally, we present our measurements o
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作者: AVID    時間: 2025-3-24 03:50
,“White” photoluminescence from electrochemically attacked silicon,pearing “white” to the naked eye. Spectroscopy of such samples reveals the presence of a distinct blue luminescence band. The spectral characteristics of the blue band are described and its nature discussed.
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作者: 健壯    時間: 2025-3-24 19:40
Studies of Porous Silicon by Electron Microscopy,osity, potential applications have evolved first in the Si-on-insulator area and, most recently, based upon its important luminescence properties. However, progress in understanding the behaviour of porous Si has been dependent to a substantial degree upon determination of its structural characteris
作者: 消極詞匯    時間: 2025-3-25 01:17

作者: 音樂會    時間: 2025-3-25 04:58
In-Situ Combined Infrared and Photoluminescence Investigation of Porous Silicon during its Etching,r during wet chemical treatments. Standard infrared absorption spectra, and also photomodulated infrared spectra may be obtained. The apparatus has been used for the study of chemical thinning of porous silicon in HF. The very large free-carrier contribution in the photomodulated spectra gives evide
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978-94-010-4927-6Kluwer Academic Publishers 1993
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NATO Science Series E:http://image.papertrans.cn/o/image/702642.jpg
作者: Libido    時間: 2025-3-25 21:14
https://doi.org/10.1007/978-94-011-2092-0Exciton; Magnetic Resonance; crystal; liquid; microscopy; modeling
作者: 表狀態(tài)    時間: 2025-3-26 03:18
Modelling of Porous Structures Formation during Electrochemical Treatment of Materials,Two theoretical models allowing to simulate morphological features of porous layers formed by electrochemical anodization of semiconductors are reviewed and their suitability for practical applications in forming the porous silicon layers is discussed.
作者: figment    時間: 2025-3-26 07:54
Phenomenological Properties of the Fast (Blue) and Slow (Red) Components in the Photoluminescence oVarious observations concerning the blue-fast component of the photoluminescence of porous silicon are summarised and compared to the “normal” luminescence.
作者: 黑豹    時間: 2025-3-26 10:19
Electroluminescence from porous Silicon,The development of electroluminescence in porous silicon is reported. Main achievements up to now are described, main problems to work on in the near future are discussed.
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作者: 江湖騙子    時間: 2025-3-26 19:58
Preparation and Properties of Thin Siloxene Films on Silicon,in particular the influence of annealing on optical absorption, luminescence and luminescence excitation, as well as optically detected magnetic resonance. Similarities between annealed siloxene and porous silicon are briefly discussed.
作者: ineffectual    時間: 2025-3-26 22:09
,“White” photoluminescence from electrochemically attacked silicon,pearing “white” to the naked eye. Spectroscopy of such samples reveals the presence of a distinct blue luminescence band. The spectral characteristics of the blue band are described and its nature discussed.
作者: 冰雹    時間: 2025-3-27 04:53
0168-132X bution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions978-94-010-4927-6978-94-011-2092-0Series ISSN 0168-132X
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H. I. Liu,D. K. Biegelsen,N. M. Johnson,F. A. Ponce,N. I. Maluf,R. F. W. Pease
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V. P. Parkhutik,J. M. Martinez-Duart,J. M. Albella
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L. Pavesi,L. Calliari,E. Zanghellini,G. Mariotto,M. Anderle,O. Bisi
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A. Cameron,X. Chen,C. Trager Cowan,D. Uttamchandani,K. P. O’donnell
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Electrochemical and Chemical Behavior of Porous Silicon Layers: The Role of the Material Wettabilito the high surface area contained in the material. The specific surface area of PS as a function of the porosity is deduced from the chemical dissolution data. It is also shown that the etch rate of PS increases with decreasing HF concentration. A model is tentatively suggested for this surprising r
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作者: 變色龍    時間: 2025-3-29 02:57
Light Emission from Porous Silicon and Other Self Organised Low Dimensional Systems,combination, and that H coverage of the surface seems to be significant in terms of saturation of the dangling bonds rather than in terms of an active component in the radiative transition..Finally,work on porous silicon has helped to stimulate a broader interest in light emission from unconventiona
作者: 慷慨援助    時間: 2025-3-29 05:05

作者: Nerve-Block    時間: 2025-3-29 08:03
Optical Properties of Low Dimensional Silicon Structures
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作者: LIEN    時間: 2025-3-29 17:00
N. Koshidaed healthcare, rescue operation planning, etc. This book’s coverage will span all scientific and technological areas that define wearable monitoring systems, including sensors, signal processing, energy, system integration, communications, and user interfaces. Six case studies will be used to illust
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作者: 細(xì)胞學(xué)    時間: 2025-3-30 03:18

作者: 有害    時間: 2025-3-30 08:00
Ph. Dumas,M. Gu,C. Syrykh,F. Salvan,J. K. Gimzewski,O. Vatel,A. Hallimaouied healthcare, rescue operation planning, etc. This book’s coverage will span all scientific and technological areas that define wearable monitoring systems, including sensors, signal processing, energy, system integration, communications, and user interfaces. Six case studies will be used to illust
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Book 1993 inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l‘Armement and CNET gav
作者: 商議    時間: 2025-3-30 15:09

作者: 群居男女    時間: 2025-3-30 16:46
Electronic Charge Trapping Effects in Porous Silicon,porosity samples do not. This is interpreted in term of space charge effects on the p-Si surface that induce loss of surface passivation and, consequently, photoluminescence degradation. This finding can explain the measured electroluminescent properties of Schottky diodes formed by Au evaporation on p-Si.
作者: 嘲弄    時間: 2025-3-31 00:40
Optoelectronic Properties of Porous Silicon,s crystalline electronic structure. Our results provide direct evidences of the central assumption that visible luminescence of PS is based on surface-sensitive quantum confinement effects in Si nanocrystallites
作者: Carminative    時間: 2025-3-31 04:14
Voltage-Tunable Electroluminescence of Porous Silicon,A reversible spectral shift as large as 270 nm is obtained for a bias variation of 0.6 V. The comparaison of the EL spectrum with the photoluminescence (PL) signal suggests that the inhomogeneous luminescence of porous silicon is selectively excited by an electrical way.
作者: 退潮    時間: 2025-3-31 06:55

作者: 怪物    時間: 2025-3-31 12:20
Scanning probe microscopies of luminescent porous silicon layers,.Texture is composed of grain of size compatible with quantum confinement effects.These nanostructures are found to be responsible for visible light emission and they are mapped together with the topography in the Low Energy Scanning Cathodoluminescence Microscope.
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作者: MIR    時間: 2025-4-1 07:31
Electrochemical Investigation of the Electroluminescent Properties of Porous Silicon,e through a tunnelling mechanism.This model is shown to be well supported by the experimental results, and allows to understand the spectral shifts and the intensity variations observed during the electrochemical oxidation of the porous layer.
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Book 2023anatomy and pathology of the scalp and calvarium, imaging findings in CT and MRI, differential diagnosis, and selected references. The author presents the key information on the left and illustrations on the right side of the book. While the book shows the most common radiological examples, it also
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lgorithm is validated on five benchmark data sets against particle swarm optimization with different number of nodes. Experimental results show that the PBA algorithm is giving competitive results as compared to the particle swarm optimization and also providing the significant speedup with increasi




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