標(biāo)題: Titlebook: On-Surface Atomic Wires and Logic Gates; Updated in 2016 Proc Marek Kolmer,Christian Joachim Conference proceedings 2017 Springer Internati [打印本頁] 作者: Menthol 時(shí)間: 2025-3-21 19:48
書目名稱On-Surface Atomic Wires and Logic Gates影響因子(影響力)
書目名稱On-Surface Atomic Wires and Logic Gates影響因子(影響力)學(xué)科排名
書目名稱On-Surface Atomic Wires and Logic Gates網(wǎng)絡(luò)公開度
書目名稱On-Surface Atomic Wires and Logic Gates網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱On-Surface Atomic Wires and Logic Gates被引頻次
書目名稱On-Surface Atomic Wires and Logic Gates被引頻次學(xué)科排名
書目名稱On-Surface Atomic Wires and Logic Gates年度引用
書目名稱On-Surface Atomic Wires and Logic Gates年度引用學(xué)科排名
書目名稱On-Surface Atomic Wires and Logic Gates讀者反饋
書目名稱On-Surface Atomic Wires and Logic Gates讀者反饋學(xué)科排名
作者: 偽造者 時(shí)間: 2025-3-22 00:16 作者: 我沒有命令 時(shí)間: 2025-3-22 01:43
Advances in Atom and Single Molecule Machineshttp://image.papertrans.cn/o/image/701328.jpg作者: 天賦 時(shí)間: 2025-3-22 05:47
https://doi.org/10.1007/978-3-319-51847-3Atomic scale conducting wire; Atomic scale logic gate; Atomic scale nanowires; Atomic scale circuits; Si作者: Metamorphosis 時(shí)間: 2025-3-22 08:59 作者: ironic 時(shí)間: 2025-3-22 14:14
Si(100):H and Ge(100):H Dimer Rows Contrast Inversion in Low-temperature Scanning Tunneling Microsc between filled- and empty-state images where the hydrogen dimer rows appear bright for filled-state images and dark for empty-state images. This contrast inversion originates from the change in the dominant surface states and their coupling to the tip apex and the bulk channels as a function of the bias voltage.作者: oxidant 時(shí)間: 2025-3-22 17:34
Delphine Sordes,Aurélie Thuaire,Patrick Reynaud,Caroline Rauer,Jean-Michel Hartmann,Hubert Moriceau,nnt man vor allem durch eine genaue Analyse des Verhaltens, welches das Kind schon zeigt. Wenn Sie dieses Buch gelesen haben, sind Sie in der Lage, wichtige Aspekte des Verhaltens in ganz verschiedenen Lebensbereichen über die ersten drei Lebensjahre hinweg (und vielleicht auch etwas darüber hinaus)作者: exclusice 時(shí)間: 2025-3-22 22:36 作者: Agility 時(shí)間: 2025-3-23 01:50
Hiroyo Kawai,Olga Neucheva,Ghassen Dridi,Mark Saeys,Christian Joachimen metastasieren nur selten in Organe au?erhalb des Hirns. Sekund?re Tumore, d.?h. Metastasen in das Gehirn, kommen regelm??ig vor. Die h?ufigsten sekund?ren ZNS-Tumoren sind H?mangiosarkome, Mamma-, Lungen- und Prostatakarzinome, Melanome und Lymphome.作者: Interlocking 時(shí)間: 2025-3-23 07:27
2193-9691 g field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics..978-3-319-84757-3978-3-319-51847-3Series ISSN 2193-9691 Series E-ISSN 2193-9705 作者: 短程旅游 時(shí)間: 2025-3-23 11:56
Hiroyo Kawai,Tiong Leh Yap,Olga Neucheva,Marek Kolmer,Marek Szymoński,Cedric Troadec,Mark Saeys,Chri作者: 不能妥協(xié) 時(shí)間: 2025-3-23 15:05 作者: 古文字學(xué) 時(shí)間: 2025-3-23 19:24
Hiroyo Kawai,Kuan Eng Johnson Goh,Mark Saeys,Christian Joachim作者: 畫布 時(shí)間: 2025-3-24 02:04
Hiroyo Kawai,Olga Neucheva,Tiong Leh Yap,Christian Joachim,Mark Saeys作者: Biomarker 時(shí)間: 2025-3-24 05:11 作者: 孵卵器 時(shí)間: 2025-3-24 07:00
Francisco Ample,Francesca Moresco,Christian Joachim作者: deriver 時(shí)間: 2025-3-24 12:28
Conference proceedings 2017d-2016, and offers for the first time an overview of up-to-date knowledge in the burgeoning field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics..作者: 不可磨滅 時(shí)間: 2025-3-24 15:48
Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations,llowed by a wafer dicing step into 1-cm. dies. Samples can be stored, shipped, and in situ opened without any additional treatment. A specific procedure has been developed in order to open the nanopackaged samples in a UHV debonder, mounted in the load-lock chamber of a low-temperature STM system (L作者: exceed 時(shí)間: 2025-3-24 21:13 作者: 沙發(fā) 時(shí)間: 2025-3-25 01:38
The Design of a Surface Atomic Scale Logic Gate with Molecular Latch Inputs,D and OR can be implanted in a semi-classical way and NOR and OR in a QHC way. For QHC, the re-emerging of the OR is due to through-surface electronic couplings, which is inducing a dependence between the inputs and the structural parameters of the QHC gates.作者: INTER 時(shí)間: 2025-3-25 05:36
Electronic Properties of a Single Dangling Bond and of Dangling Bond Wires on a Si(001):H Surface,ruct such devices. Using low-temperature scanning tunneling spectroscopy, imaging, density functional theory, and quantum transport calculations, we demonstrate the influence of doping, charging, and buckling on the electronic properties of a single dangling bond and a line of dangling bonds created along a dimer row.作者: 玉米棒子 時(shí)間: 2025-3-25 09:29 作者: 整頓 時(shí)間: 2025-3-25 13:52
Molecule-Latches in Atomic Scale Surface Logic Gates Constructed on Si(100)H,d, keeping the end phenyl unchanged. Among these molecules, 4-acetylalkylphenyl presents the best bistable character on Si(100)H and can perfectly control the conductance of a Si(100)H atomic scale electronic surface interferometer.作者: conduct 時(shí)間: 2025-3-25 18:21 作者: 異端 時(shí)間: 2025-3-25 23:20
,Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on thehat concerns the formation of various phases such as the 3×1 and dihydride. A third method is also detailed and permits the surface hydrogenation at the atomic scale allowing to design some patches on the Si(100) surface of a few nanometer.作者: 沙草紙 時(shí)間: 2025-3-26 04:04 作者: thwart 時(shí)間: 2025-3-26 06:49
Band Engineering of the Si(001):H Surface by Doping with P and B Atoms, band gap with a significant dispersion along the dimer rows and which overlap well with the DB wire band states, demonstrating the possibility of using patches a B-doped Si(001):H as viable and robust contact pads for DB wires.作者: 事情 時(shí)間: 2025-3-26 10:43
,Complex Atomic-Scale Surface Electronic Circuit’s Simulator Including the Pads and the Supporting Se practical size of the total atomic-scale circuit are discussed with the future perspective of developing an atomic-scale circuit simulator. Practical problems like the limitation in number of atoms of circuit builders and software limitations in terms of RAM memory and CPU computing time are also discussed for this objective.作者: ineffectual 時(shí)間: 2025-3-26 16:07
Conference proceedings 2017le wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangli作者: 生氣地 時(shí)間: 2025-3-26 20:48
,Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on theue is discussed in terms of surface pollution and surface roughness. A basic recipe is given. A second part is devoted to the methods commonly used with vacuum techniques. A discussion is done on the hydrogenation parameters to improve the surface quality at the atomic scale, in particular the one t作者: chandel 時(shí)間: 2025-3-26 21:07
Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations,ovides surface study at the atomic scale. However, the surface preparation is a crucial experimental step and requires a complex protocol conducted in situ in a UHV chamber. Surface contamination, atomic roughness, and defect density must be controlled in order to ensure the reliability of advanced 作者: sleep-spindles 時(shí)間: 2025-3-27 03:35
Atomic Wires on Ge(001):H Surface,scribe a full protocol of formation of atomic wires on Ge(001):H-(2×1) surface. The wires are composed of bare germanium dimers possessing dangling bonds, which introduce electronic states within the Ge(001):H surface band gap. With a view to the possible applications, we present detailed analysis o作者: 祖?zhèn)髫?cái)產(chǎn) 時(shí)間: 2025-3-27 06:56 作者: 發(fā)起 時(shí)間: 2025-3-27 09:34 作者: ANN 時(shí)間: 2025-3-27 14:20
Band Engineering of the Si(001):H Surface by Doping with P and B Atoms,Si(001):H surface patches are proposed as an alternative to metallic nano-islands or as an intermediate scale between the DB wire and the metallic islands to precisely contact a DB wire. Our calculations show that patches of B dopants incorporated in Si(001):H surface introduce states in the surface作者: Emmenagogue 時(shí)間: 2025-3-27 18:20
Electronic Properties of a Single Dangling Bond and of Dangling Bond Wires on a Si(001):H Surface,nic circuits. Therefore, it is critical to characterize the structural and electronic properties of single dangling bonds to begin to design and construct such devices. Using low-temperature scanning tunneling spectroscopy, imaging, density functional theory, and quantum transport calculations, we d作者: conscribe 時(shí)間: 2025-3-28 00:23 作者: Provenance 時(shí)間: 2025-3-28 04:08 作者: Neuropeptides 時(shí)間: 2025-3-28 10:06 作者: 就職 時(shí)間: 2025-3-28 12:29
,Complex Atomic-Scale Surface Electronic Circuit’s Simulator Including the Pads and the Supporting Ss and Au(111) metallic nano-pads contacts discussed in Chapter “.” have been investigated to go forward for reaching compact and complex Boolean logic gates systems. The atomic wire electronic band gap, the tunneling intensity decay problems with the length of those atomic-scale interconnects and th作者: collateral 時(shí)間: 2025-3-28 18:32
Delphine Sordes,Aurélie Thuaire,Patrick Reynaud,Caroline Rauer,Jean-Michel Hartmann,Hubert Moriceau, und vielleicht auch zwischen den Zeilen lesen k?nnen, worauf es ankommt: Ein objektiver, aber liebevoller Blick auf Ver?nderungen beim Kind, kombiniert mit dem Wunsch, das Kind in seinen eigenen Entwicklungsbemühungen zu unterstützen, sind wichtige Schlüssel zu einer geglückten Begleitung. Und dies作者: Cholagogue 時(shí)間: 2025-3-28 21:15
Marek Kolmer,Jakub Lis,Marek Szymoński und vielleicht auch zwischen den Zeilen lesen k?nnen, worauf es ankommt: Ein objektiver, aber liebevoller Blick auf Ver?nderungen beim Kind, kombiniert mit dem Wunsch, das Kind in seinen eigenen Entwicklungsbemühungen zu unterstützen, sind wichtige Schlüssel zu einer geglückten Begleitung. Und dies作者: Gentry 時(shí)間: 2025-3-29 01:03 作者: blithe 時(shí)間: 2025-3-29 03:22
9樓作者: 疼死我了 時(shí)間: 2025-3-29 07:23
10樓作者: 紋章 時(shí)間: 2025-3-29 12:53
10樓作者: convulsion 時(shí)間: 2025-3-29 17:20
10樓作者: Diaphragm 時(shí)間: 2025-3-29 20:38
10樓
