標(biāo)題: Titlebook: Non-logic Devices in Logic Processes; Yanjun Ma,Edwin Kan Book 2017 Springer International Publishing AG 2017 Device Physics.Logic CMOS.MO [打印本頁(yè)] 作者: relapse 時(shí)間: 2025-3-21 19:23
書目名稱Non-logic Devices in Logic Processes影響因子(影響力)
書目名稱Non-logic Devices in Logic Processes影響因子(影響力)學(xué)科排名
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書目名稱Non-logic Devices in Logic Processes網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
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書目名稱Non-logic Devices in Logic Processes被引頻次學(xué)科排名
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書目名稱Non-logic Devices in Logic Processes年度引用學(xué)科排名
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書目名稱Non-logic Devices in Logic Processes讀者反饋學(xué)科排名
作者: 賭博 時(shí)間: 2025-3-21 22:59 作者: 倒轉(zhuǎn) 時(shí)間: 2025-3-22 01:38
Yanjun Ma,Edwin Kanw of the large amount of data available some of the information is given on the CD ROM only. Parameters for low-lying nuclear levels of many nuclei were previously published by Landolt-B?rnstein in Volume I/18, and for nuclear unbound states in Volumes I/16 and I/19A..978-3-540-33961-8Series ISSN 1615-1844 Series E-ISSN 1616-9522 作者: Flirtatious 時(shí)間: 2025-3-22 06:35
http://image.papertrans.cn/n/image/667125.jpg作者: 并排上下 時(shí)間: 2025-3-22 11:51
https://doi.org/10.1007/978-3-319-48339-9Device Physics; Logic CMOS; MOSFETs; Semiconductor Device Physics; Semiconductor Devices; Semiconductor F作者: 庇護(hù) 時(shí)間: 2025-3-22 15:49
Bipolar Transistors in Logic CMOS Processestensively discussed, mostly in the context of avoiding the latch-up risk for CMOS ICs. We here focus on a couple of applications, especially in the voltage reference circuits, of the BJTs. We also discuss a special punchthrough transistor that can be obtained from the CMOS process.作者: ODIUM 時(shí)間: 2025-3-22 19:05
Diodes in Logic CMOS Processesive, the polysilicon resistor. In particular, the different temperature coefficients of resistivity (TCR) of p and n polysilicon make it possible to obtain a resistor that is temperature independent. Then we showed several examples of making Schottky diodes in logic processes and discussed their properties and applications.作者: MIRE 時(shí)間: 2025-3-22 23:46
Logic Nonvolatile Memoryive an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs. High-voltage circuits, including charge pumps and high-voltage switches, are also discussed. Reliability issues associated with embedded NVMs are introduced.作者: 發(fā)展 時(shí)間: 2025-3-23 03:43 作者: Fissure 時(shí)間: 2025-3-23 07:35
978-3-319-83916-5Springer International Publishing AG 2017作者: BARGE 時(shí)間: 2025-3-23 13:46
Yanjun Ma,Edwin KanEnables readers to design less expensive integrated circuits, with higher yield, which reach the market faster.Covers a wide range of topics, including device physics, device designs and implementatio作者: 和音 時(shí)間: 2025-3-23 14:11
IntroductionIn this chapter, we provide a brief introduction and review the importance of semiconductor devices in supporting the whole electronics industry, the economics of semiconductor industry, the Moore’s law, and a number of corollaries that may be used to derive the best practices in designing devices for use in integrated circuits.作者: GORGE 時(shí)間: 2025-3-23 19:49 作者: 只有 時(shí)間: 2025-3-24 00:13 作者: 易受騙 時(shí)間: 2025-3-24 03:07
Overview of Logic CMOS Processes from that of the core devices, is shown in parallel with the core devices. We also discussed the fabrication of native devices and potential use of spacer for charge storage—two features that will see use in later chapters. The basics of mask design, process monitoring, and wafer fabrication econom作者: Resection 時(shí)間: 2025-3-24 07:58
Non-logic MOSFETs in Logic CMOS Processeseveral types of MOSFETs that have different threshold voltages than those provided by the foundries. In particular, the bandgap-engineered FETs have found wide use in voltage reference circuits. Then in Sect. 4.3 we discuss another important class of MOSFETs—LDMOS that can operate at voltage over 15作者: 勤勉 時(shí)間: 2025-3-24 13:12
Floating-Gate Devices in Logic CMOS Processeshat can be produced in logic CMOS processes. We describe some examples of making floating-gate memory cells in a?logic process and several methods of programming, including tunneling and hot carrier injection, floating-gate devices. The importance of coupling ratio and its implications to the NVM ce作者: Chameleon 時(shí)間: 2025-3-24 16:31 作者: 雇傭兵 時(shí)間: 2025-3-24 19:37 作者: 記憶法 時(shí)間: 2025-3-25 02:20
Logic Nonvolatile Memoryive an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs. High-voltage circuits, including charge pumps and high-voltage switches, are also discussed. Reliability issues asso作者: Amylase 時(shí)間: 2025-3-25 05:16
Multiple-Times Programmable Logic Nonvolatile Memory NVMs are discussed, including medium density eNVM based on two-transistor (2T) memory cell, and low density but also low-power three-transistor (3T) memory cell. In the last section, we review the charge trapping-based NVM cell design.作者: sigmoid-colon 時(shí)間: 2025-3-25 10:31
Non-Data-Storage Applicationsnalog converters that use floating-gate transistors as analog storage for trimming of current sources. Adaptive floating-gate comparator and several applications are briefly described. RFID systems application is then reviewed where many of the novel devices and circuits, including native devices, b作者: 缺陷 時(shí)間: 2025-3-25 12:44
CMOS Biosensorssignal transduction from the biological to the electronic domains. As the amperometric sensing on CMOS is similar to most popular mixed-signal designs, we will only focus on field-effect sensors with a polarizable electrode or interface. A general device based on the neuromorphic principles in the p作者: geriatrician 時(shí)間: 2025-3-25 18:30
Waveform Shaping Structures and Transmission Lines on CMOSnterest (or equivalently the operating frequency is much lower than the speed of light divided by the layout size), and are hence treated as lumped circuit elements or scattering blocks in conventional microwave circuits. These lumped circuits do not need to consider the coupling between the electri作者: 縮減了 時(shí)間: 2025-3-25 21:06 作者: nutrients 時(shí)間: 2025-3-26 01:03 作者: tooth-decay 時(shí)間: 2025-3-26 06:42 作者: Perineum 時(shí)間: 2025-3-26 12:14
yield. The author presents an integrated picture of semiconductor device physics and manufacturing techniques, as well as numerous practical examples of device designs that are tried and true.978-3-319-83916-5978-3-319-48339-9作者: 縱欲 時(shí)間: 2025-3-26 15:37 作者: insurrection 時(shí)間: 2025-3-26 20:18 作者: 小步舞 時(shí)間: 2025-3-26 21:09 作者: 有助于 時(shí)間: 2025-3-27 04:43 作者: mendacity 時(shí)間: 2025-3-27 05:56 作者: 無(wú)政府主義者 時(shí)間: 2025-3-27 12:05 作者: 摸索 時(shí)間: 2025-3-27 15:07
Non-Data-Storage Applicationstral networks is then discussed. The use of floating-gate devices for multi-input tunable biosensors will be discussed in Chap. ., while the transmission line-based waveform-shaping structures in the logic process will be investigated in Chap. ..作者: 美麗的寫 時(shí)間: 2025-3-27 18:24
Conclusions and Outlookory technologies, including STT-RAM, PCRAM, and RRAM. Both directions could open up new opportunities for designing new non-logic devices. Finally new computing paradigms, including quantum computing, may usher in fundamentally new processes for building these new computing devices.作者: FIG 時(shí)間: 2025-3-27 22:32
Overview of Logic CMOS Devices barrier for IC design and applications, for example, in wearable ICs, it is useful to always keep in mind the fundamental factors affecting CMOS power consumption. We conclude with a brief analysis of power consumption of CMOS ICs.作者: 有權(quán) 時(shí)間: 2025-3-28 05:32 作者: 柏樹 時(shí)間: 2025-3-28 09:21
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