標題: Titlebook: Noise in Nanoscale Semiconductor Devices; Tibor Grasser Book 2020 Springer Nature Switzerland AG 2020 Random Telegraph Signals in Semicond [打印本頁] 作者: Recovery 時間: 2025-3-21 19:06
書目名稱Noise in Nanoscale Semiconductor Devices影響因子(影響力)
書目名稱Noise in Nanoscale Semiconductor Devices影響因子(影響力)學(xué)科排名
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書目名稱Noise in Nanoscale Semiconductor Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Noise in Nanoscale Semiconductor Devices被引頻次
書目名稱Noise in Nanoscale Semiconductor Devices被引頻次學(xué)科排名
書目名稱Noise in Nanoscale Semiconductor Devices年度引用
書目名稱Noise in Nanoscale Semiconductor Devices年度引用學(xué)科排名
書目名稱Noise in Nanoscale Semiconductor Devices讀者反饋
書目名稱Noise in Nanoscale Semiconductor Devices讀者反饋學(xué)科排名
作者: 小母馬 時間: 2025-3-21 20:27
Book 2020 aimed at increasing reliability based on physical microscopic models.? Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a作者: BOLT 時間: 2025-3-22 03:49 作者: GUILT 時間: 2025-3-22 05:57
Book 2020 wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects..Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;.Enables readers to design more reliable semiconductor devices;.Offers the most up-to-date information on point defects, based on physical microscopic models..作者: 殺人 時間: 2025-3-22 12:02
Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOstors and the influence of static low magnetic fields on the random telegraph noise signature at room temperature. Results show an unexpected trap oxide activation which is totally dependent on the specific device and the magnetic field applied.作者: FRET 時間: 2025-3-22 15:21 作者: 調(diào)整校對 時間: 2025-3-22 18:12
,Low-Frequency Noise in III–V, Ge, and 2D Transistors,es with novel materials and architectures. In this chapter, low-frequency noise characteristics of MOSFETs with novel channel materials are presented and analyzed. The impact of device scaling and ballistic transport on low-frequency noise is discussed.作者: 格子架 時間: 2025-3-22 21:44
Defect-Based Compact Modeling of Random Telegraph Noise,tage shift by adding a variable voltage source at the gate of the core device model. This combined compact model allows to incorporate all BTI and RTN related electrostatics and kinetics in standard EDA-tools as a black box without a custom simulation flow.作者: hematuria 時間: 2025-3-23 02:09
Oxide Trap-Induced RTS in MOSFETs,tion of passivated traps. Stressing the MOSFETs has also resulted in random activation and deactivation of oxide traps. This chapter focuses on the theoretical background of RTS in MOSFETs, sample setup for RTS measurements, data analyses, advantages, and limitations of using RTS to characterize defects.作者: 專橫 時間: 2025-3-23 08:44
,The Langevin–Boltzmann Equation for Noise Calculation,f balance equations of which the results for noise and transport are consistent with the Langevin–Boltzmann equation under homogeneous bulk conditions by introducing modified Langevin forces. Analytical and numerical solutions are given for simple problems to demonstrate the utility of the concepts.作者: arbiter 時間: 2025-3-23 12:37
Principles and Applications of ,-RTN in Nano-scaled MOSFET,e conventional soft breakdown and hard breakdown. And, a new one-time-programming (OTP) memory based on this dielectric-fuse breakdown has been demonstrated on a 28-nm high-k metal gate CMOS platform.作者: Influx 時間: 2025-3-23 16:17 作者: 不透明性 時間: 2025-3-23 20:17 作者: Antarctic 時間: 2025-3-24 02:04 作者: 桶去微染 時間: 2025-3-24 04:32
https://doi.org/10.1007/978-3-030-37500-3Random Telegraph Signals in Semiconductor Devices; Low-Frequency Noise in Advanced MOS Devices; Noise 作者: Ordeal 時間: 2025-3-24 06:56
Tibor GrasserDescribes the state-of-the-art, regarding noise in nanometer semiconductor devices.Enables readers to design more reliable semiconductor devices.Offers the most up-to-date information on point defects作者: 百靈鳥 時間: 2025-3-24 11:08
Origins of 1/, Noise in Electronic Materials and Devices: A Historical Perspective,devices is caused primarily by defects and impurities. The 1/. noise of semiconductor devices was considered to be a surface effect, ascribed by McWhorter to fluctuations in carrier number caused by surface charge trapping. After much controversy, the noise of metal films was shown to be due to mobi作者: 有毛就脫毛 時間: 2025-3-24 17:50
Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs,ing of Fully Depleted Silicon-on-Insulator (FDSOI) MOSFETs, as well as the development of circuit noise simulation methods. Before doing so, we make a brief introduction (Sect. .) on the importance of LFN characterization and modeling, especially in sub-μm multi-interface devices such as the FDSOI M作者: defeatist 時間: 2025-3-24 22:06 作者: 魯莽 時間: 2025-3-25 00:01 作者: 具體 時間: 2025-3-25 07:14 作者: grovel 時間: 2025-3-25 08:06 作者: 收藏品 時間: 2025-3-25 15:21
Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals, main focus is put on the analysis of noise signals, especially on the analysis of the so-called random telegraph noise (RTN), which is caused by single microscopic defects in the MOS transistor. In detail, RTN signals evolve as discrete changes of the current between two distinct levels when static作者: 共同時代 時間: 2025-3-25 19:06
Measurement and Simulation Methods for Assessing SRAM Reliability Against Random Telegraph Noise,AM) reliability are described. RTN refers to random transition between two conduction states of a transistor with time, associated with trapping/de-trapping of a single electron or hole. It is a reliability concern for advanced integrated circuits using extremely small transistors, since their elect作者: 銀版照相 時間: 2025-3-25 23:00
Random Telegraph Noise Under Switching Operation,test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk. Measurements are performed for ROs of different topology, gate width, and stage number under different supply voltage, substrate bias, and temperature. Measurement results reveal valuable insigh作者: Vo2-Max 時間: 2025-3-26 03:25
,Low-Frequency Noise in III–V, Ge, and 2D Transistors,Low-frequency noise characterization can be used as alternate probes to quantitatively analyze performance, variability, and reliability of such devices with novel materials and architectures. In this chapter, low-frequency noise characteristics of MOSFETs with novel channel materials are presented 作者: reperfusion 時間: 2025-3-26 05:32
Detection and Characterization of Single Defects in MOSFETs,miconductor surface in MOSFETs. Recently, a unique and systematic characterization of . single MOS interface defects was carried out using the CP method. Based on the experimental results, it is shown in this chapter that two energy levels participate in electron capture/emission processes in a sing作者: 痛得哭了 時間: 2025-3-26 10:34
,Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techg random telegraph noise (RTN) signatures, considering HfO. high-κ dielectric as the material of interest. The chapter also provides an overview on the challenges associated with the existing probe station-based device-level RTN spectroscopy and the potential for the conductive atomic force microsco作者: glans-penis 時間: 2025-3-26 13:55
RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devicuctor devices is well documented. In particular its effect is exasperated in advanced nano-scale devices. In this book chapter, we navigate through some of the important effects of RTN in advanced MOS devices in detail. The amplitude of RTN fluctuation (in terms of current and threshold voltage) ass作者: Infraction 時間: 2025-3-26 17:02 作者: –吃 時間: 2025-3-26 23:37 作者: 疲憊的老馬 時間: 2025-3-27 03:21 作者: Outspoken 時間: 2025-3-27 05:50 作者: 非實體 時間: 2025-3-27 12:55
Atomistic Modeling of Oxide Defects,TN) and bias temperature instability (BTI). Density functional theory (DFT), arguably the most popular method in computational chemistry, allows the study of defects at an atomistic level from first principles. Here we will give a short introduction into the theoretical foundation of DFT and the met作者: Petechiae 時間: 2025-3-27 13:45
,The Langevin–Boltzmann Equation for Noise Calculation,d, where the noise calculation is consistent with transport modeling and requires no additional information. It is shown how to calculate the power spectral densities of the terminal current noise based on Green’s functions and local noise sources by which insight into the device-internal noise proc作者: 弓箭 時間: 2025-3-27 20:11
y of tomorrow can be designed, built, and run virtually as a digital twin likeness of its real-world counterpart, before the physical structure is actually erected..It highlights the main digitalization technologies that have stimulated the Industry 4.0, how these technologies work and integrate wit作者: Jogging 時間: 2025-3-28 01:42
D. M. Fleetwoodta for years to come. The book can also serve as an introduction to several other important subfields of machine learning that are seldom touched upon in other books. Machine learning as a discipline would not be possible without the inner workings of optimization at hand. The book includes the nece作者: forager 時間: 2025-3-28 03:37
Christoforos Theodorou,Gérard Ghibaudota for years to come. The book can also serve as an introduction to several other important subfields of machine learning that are seldom touched upon in other books. Machine learning as a discipline would not be possible without the inner workings of optimization at hand. The book includes the nece作者: 藐視 時間: 2025-3-28 09:53
F. M. Puglisit autonomous driving systems.Includes various types of GANs,.Data is the indispensable fuel that drives the decision making of everything from governments, to major corporations, to sports teams. Its value is almost beyond measure. But what if that data is either unavailable or problematic to access作者: 評論者 時間: 2025-3-28 11:56
Carlos Marquez,Oscar Huerta,Adrian I. Tec-Chim,Fernando Guarin,Edmundo A. Gutierrez-D,Francisco Gamit autonomous driving systems.Includes various types of GANs,.Data is the indispensable fuel that drives the decision making of everything from governments, to major corporations, to sports teams. Its value is almost beyond measure. But what if that data is either unavailable or problematic to access作者: 宏偉 時間: 2025-3-28 16:03 作者: 值得贊賞 時間: 2025-3-28 22:30 作者: pineal-gland 時間: 2025-3-28 22:59
Bernhard Stampfer,Alexander Grill,Michael Waltldescribes all approaches that have been developed so far, provides a brief history of synthetic datasets, and gives useful hints on how to deal with real data problems like nonresponse, skip patterns, or logical constraints. .Each chapter is dedicated to one approach, first describing the general co作者: Keratin 時間: 2025-3-29 05:11
Kiyoshi Takeuchictical implementation issues makes it appealing to the resea.The aim of this book is to give the reader a detailed introduction to the different approaches to generating multiply imputed synthetic datasets. It describes all approaches that have been developed so far, provides a brief history of synt作者: misshapen 時間: 2025-3-29 10:12
Kazutoshi Kobayashi,Mahfuzul Islam,Takashi Matsumoto,Ryo Kishidadescribes all approaches that have been developed so far, provides a brief history of synthetic datasets, and gives useful hints on how to deal with real data problems like nonresponse, skip patterns, or logical constraints. .Each chapter is dedicated to one approach, first describing the general co作者: 大約冬季 時間: 2025-3-29 12:14 作者: 引起 時間: 2025-3-29 16:56 作者: Antarctic 時間: 2025-3-29 22:52
Alok Ranjan,Nagarajan Raghavan,Kalya Shubhakar,Sean Joseph O’Shea,Kin Leong Peyctical implementation issues makes it appealing to the resea.The aim of this book is to give the reader a detailed introduction to the different approaches to generating multiply imputed synthetic datasets. It describes all approaches that have been developed so far, provides a brief history of synt作者: BILL 時間: 2025-3-30 02:40
F. Adamu-Lema,C. Monzio Compagnoni,O. Badami,V. Georgiev,A. Asenovdescribes all approaches that have been developed so far, provides a brief history of synthetic datasets, and gives useful hints on how to deal with real data problems like nonresponse, skip patterns, or logical constraints. .Each chapter is dedicated to one approach, first describing the general co作者: ectropion 時間: 2025-3-30 06:48
J. Martin-Martinez,R. Rodriguez,M. Nafriactical implementation issues makes it appealing to the resea.The aim of this book is to give the reader a detailed introduction to the different approaches to generating multiply imputed synthetic datasets. It describes all approaches that have been developed so far, provides a brief history of synt作者: 薄荷醇 時間: 2025-3-30 11:45 作者: Insatiable 時間: 2025-3-30 13:42
Pieter Weckx,Ben Kaczer,Marko Simicic,Bertrand Parvais,Dimitri Lintendescribes all approaches that have been developed so far, provides a brief history of synthetic datasets, and gives useful hints on how to deal with real data problems like nonresponse, skip patterns, or logical constraints. .Each chapter is dedicated to one approach, first describing the general co作者: 解決 時間: 2025-3-30 18:39
Christoph Jungemann into novel gene networks. Here, we present a guide for biologists to build and utilize models of gene networks (synthetic or natural) to analyze dynamical properties of these networks while considering the low numbers of molecules inside cells that results in stochastic gene expression. We start by作者: adjacent 時間: 2025-3-31 00:31 作者: 菊花 時間: 2025-3-31 03:42 作者: 群居動物 時間: 2025-3-31 07:56 作者: 托人看管 時間: 2025-3-31 09:23
Bernhard Stampfer,Alexander Grill,Michael Waltlt trade-off between analytical validity and the risk of disclosure..The book concludes with a glimpse into the future of synthetic datasets, discussing the potential benefits and possible obstacles of the approach and ways to address the concerns of data users and their understandable discomfort wit作者: negligence 時間: 2025-3-31 14:15 作者: 陳舊 時間: 2025-3-31 19:39 作者: 加劇 時間: 2025-3-31 22:19 作者: 救護車 時間: 2025-4-1 05:21
Pieter Weckx,Ben Kaczer,Marko Simicic,Bertrand Parvais,Dimitri Lintent trade-off between analytical validity and the risk of disclosure..The book concludes with a glimpse into the future of synthetic datasets, discussing the potential benefits and possible obstacles of the approach and ways to address the concerns of data users and their understandable discomfort wit作者: 上下連貫 時間: 2025-4-1 08:10
Christoph Jungemannh example code. Finally, we illustrate how using a combination of quantitative experimental characterization of a synthetic circuit and mathematical modeling can guide the iterative redesign of a synthetic circuit to achieve the desired properties. This is shown using a classic synthetic oscillator,作者: 抗原 時間: 2025-4-1 13:34
F. M. Puglisieting this book, you’ll have the knowledge necessary to generate and use synthetic data to enhance your corporate, scientific, or governmental decision making..What You Will Learn.Create synthetic tabular data 978-1-4842-8586-2978-1-4842-8587-9作者: Exhilarate 時間: 2025-4-1 15:42 作者: Keshan-disease 時間: 2025-4-1 21:13 作者: chemical-peel 時間: 2025-4-2 00:51
Alessandro S. Spinelli,Christian Monzio Compagnoni,Andrea L. Lacaitah a glimpse into the future of synthetic datasets, discussing the potential benefits and possible obstacles of the approach and ways to address the concerns of data users and their understandable discomfort wit978-1-4614-0325-8978-1-4614-0326-5Series ISSN 0930-0325 Series E-ISSN 2197-7186 作者: Alcove 時間: 2025-4-2 04:53
Kiyoshi Takeuchih a glimpse into the future of synthetic datasets, discussing the potential benefits and possible obstacles of the approach and ways to address the concerns of data users and their understandable discomfort wit978-1-4614-0325-8978-1-4614-0326-5Series ISSN 0930-0325 Series E-ISSN 2197-7186
