作者: Adulate 時間: 2025-3-21 21:24 作者: Neonatal 時間: 2025-3-22 04:08 作者: Clumsy 時間: 2025-3-22 05:48 作者: meretricious 時間: 2025-3-22 11:09 作者: crumble 時間: 2025-3-22 15:33 作者: 完成才會征服 時間: 2025-3-22 17:03 作者: invert 時間: 2025-3-22 23:15
Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapatiworking on surface plasmons in metal films.Contains importan.This significantly extended second edition?addresses the important physical phenomenon of?Surface Plasmon Resonance (SPR) or Surface Plasmon Polaritons (SPP) in thin metal films, a phenomenon which is?exploited in the design of a large var作者: Mettle 時間: 2025-3-23 04:21
Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories,ation density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applicatio作者: ensemble 時間: 2025-3-23 05:56
Spin Orbit Torque MRAM,power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alter作者: inclusive 時間: 2025-3-23 12:05 作者: 攤位 時間: 2025-3-23 14:56
Magnetic Domain Wall Race Track Memory,s following the Moore’s law. With the end of Moore’s era on the silicon roadmap, the processing technologies are apparent frontrunner than the memory counterparts in terms of accessing speed and integration volumes.作者: 換話題 時間: 2025-3-23 22:04
Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapati metals. Furthermore,?a selection of metal grating structures that allow SP excitation is presented, as are features of radiative SP‘s.?..Finally, this treatise includes as-yet?hardly explored SPR features of s978-3-030-17488-0978-3-030-17486-6Series ISSN 0931-5195 Series E-ISSN 2198-4743 作者: CLEFT 時間: 2025-3-24 01:57 作者: 安定 時間: 2025-3-24 04:36 作者: GAVEL 時間: 2025-3-24 07:59
2191-530X gic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality..978-981-10-2719-2978-981-10-2720-8Series ISSN 2191-530X Series E-ISSN 2191-5318 作者: 刺激 時間: 2025-3-24 12:04
Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapatilly compatible analysis, is discussed in detail. This book is of interest and useful to a wide readership in bioanalytical chemistry, molecular biology, and many related interdisciplinary fields..978-981-99-3120-0978-981-99-3118-7Series ISSN 0342-4901 Series E-ISSN 2192-6603 作者: delta-waves 時間: 2025-3-24 18:05
Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapati measurements are often achieved through separation techniques. Physical parameters are somehow easer to measure with contactless sensors than chemicals and biochemical. The non-physical parameters are often buried in complex environments; therefore, advanced sample preparation and separation techni作者: RACE 時間: 2025-3-24 20:38 作者: Latency 時間: 2025-3-25 00:54
https://doi.org/10.1007/978-981-10-2720-8Spin Transfer Torque; Magnetic Tunnel Junction; STT-MRAM; All Spin Logic; Non-volatile Computing Archite作者: 安定 時間: 2025-3-25 07:10
Brajesh Kumar‘Kaushik,Shivam Verma,Sanjay PrajapatDemonstrates nonvolatile computing architecture using spin transfer torque-magnetoresistive random access memory (STT-MRAMs) and comparison with conventional architecture.Includes emerging topics such作者: CURT 時間: 2025-3-25 07:38 作者: Jogging 時間: 2025-3-25 13:28
Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories,ation density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applications.作者: 通情達理 時間: 2025-3-25 17:04 作者: Meditate 時間: 2025-3-25 21:17
Next Generation Spin Torque Memories978-981-10-2720-8Series ISSN 2191-530X Series E-ISSN 2191-5318 作者: 下級 時間: 2025-3-26 04:08
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