標題: Titlebook: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; Lachlan E. Black Book 2016 Springer International Publishin [打印本頁] 作者: Ingrown-Toenail 時間: 2025-3-21 18:07
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface影響因子(影響力)
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface影響因子(影響力)學科排名
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書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface網(wǎng)絡(luò)公開度學科排名
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface被引頻次
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface被引頻次學科排名
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書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface年度引用學科排名
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface讀者反饋
書目名稱New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface讀者反饋學科排名
作者: offense 時間: 2025-3-21 20:49 作者: 缺乏 時間: 2025-3-22 03:35
Al,O, Deposition and Characterisation,amined in this work was performed by the APCVD method, except in a few cases where . was deposited by ALD. Therefore we begin in Sect.?. with a detailed description of the APCVD deposition technique and the APCVD system used to deposit the . passivation layers, including a discussion of the various 作者: 哎呦 時間: 2025-3-22 08:27
Influence of Deposition Parameters,ese states, and hence the passivation properties of the interface, depend sensitively on the conditions under which this interface is formed, and therefore on the parameters of the deposition process in question. As described in Chap.?., for APCVD the main deposition parameters which may be adjusted作者: ineluctable 時間: 2025-3-22 10:00
Effect of Post-Deposition Thermal Processing,for Al.O. films deposited at lower temperatures, some thermal treatment is generally required to “activate” the passivation. This step most commonly takes the form of an anneal performed at a temperature of 400–., typically in an . ambient. In Chap.?. it was shown that the APCVD Al.O. films examined作者: 連接 時間: 2025-3-22 16:16 作者: 墊子 時間: 2025-3-22 18:31 作者: 不如樂死去 時間: 2025-3-22 22:49 作者: medium 時間: 2025-3-23 02:31 作者: 吊胃口 時間: 2025-3-23 08:10
Lachlan E. Black not our internal state. For Seneca we travel for reasons of which we are unaware, often unwittingly trying to escape our fears and issues or just following what other people do. His consequent recommendation is that instead of traveling we should each develop knowledge which addresses our self-igno作者: 昏迷狀態(tài) 時間: 2025-3-23 13:19 作者: 蘆筍 時間: 2025-3-23 15:06
Lachlan E. Blacke people in concentric circles becomes relevant here. His response to such categorization is to request that we decrease the distance between ourselves and the people in our outer circles. Hierocles evidences his Stoic orientations in describing this as an individuated impulse that is in accordance 作者: NORM 時間: 2025-3-23 19:55
Lachlan E. Blacke people in concentric circles becomes relevant here. His response to such categorization is to request that we decrease the distance between ourselves and the people in our outer circles. Hierocles evidences his Stoic orientations in describing this as an individuated impulse that is in accordance 作者: Feedback 時間: 2025-3-24 00:38 作者: 津貼 時間: 2025-3-24 06:26
Lachlan E. Blacklly considered an eighteenth-century invention but, as we show here, it has a much older provenance that goes all the way back to the Hellenistic schools. The Stoics are the most important figures in the prehistory of cosmopolitanism, and liberal universalism more generally, since they were the firs作者: theta-waves 時間: 2025-3-24 07:46 作者: expansive 時間: 2025-3-24 12:40
New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface作者: 勤勉 時間: 2025-3-24 18:01 作者: VOC 時間: 2025-3-24 20:04 作者: coltish 時間: 2025-3-24 23:36 作者: 商品 時間: 2025-3-25 06:14 作者: 混合物 時間: 2025-3-25 11:08 作者: Hyperopia 時間: 2025-3-25 13:54
Lachlan E. Black of our individually proactive, internal self-awareness. In navigating this difference, I attend to the collegial orientations in Hierocles’ account?of cosmopolitanism. From this, we can argue that for both Hierocles and Lévi-Strauss the regulation of affection is not simply reflective of an individ作者: Anemia 時間: 2025-3-25 15:55 作者: Venules 時間: 2025-3-25 20:43 作者: 完成才能戰(zhàn)勝 時間: 2025-3-26 00:11 作者: kyphoplasty 時間: 2025-3-26 07:32
the thinking of the first Christian millennium when all were in unity. In this context, the new studies and synthesis of Greek-Catholic theology link the tradition of the Greek-Catholic school with the new theology of unity in affirming its own spirituality in the pluralism of the Catholic theologi作者: 假裝是我 時間: 2025-3-26 08:38 作者: spinal-stenosis 時間: 2025-3-26 13:04
New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface978-3-319-32521-7Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: 果仁 時間: 2025-3-26 16:50 作者: opinionated 時間: 2025-3-26 23:30
Effect of Surface Dopant Concentration,The effectiveness of Al.O. surface passivation depends not only on the processing history of the film, but also on the properties of the semiconductor surface on which it is deposited. In this chapter we examine the influence of surface dopant type and concentration on the recombination rate at Al.O.-passivated surfaces.作者: 吞下 時間: 2025-3-27 04:12
,Effect of Surface Orientation and?Morphology,Besides the dopant concentration, the major surface properties which may influence passivation quality are crystalline orientation and morphology.作者: 會議 時間: 2025-3-27 06:37 作者: 割公牛膨脹 時間: 2025-3-27 11:12 作者: venous-leak 時間: 2025-3-27 14:40
Springer Theseshttp://image.papertrans.cn/n/image/665644.jpg作者: 有常識 時間: 2025-3-27 19:50
https://doi.org/10.1007/978-3-319-32521-7Surface Recombination Theory; Passivation Performance; Passivating Dielectrics; Deposition of Al2O3; Atm作者: garrulous 時間: 2025-3-27 22:32
2190-5053 ough a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...978-3-319-81307-3978-3-319-32521-7Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: 系列 時間: 2025-3-28 04:21 作者: 貴族 時間: 2025-3-28 08:17
Book 2016physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...作者: 背書 時間: 2025-3-28 11:18
Book 2016ndustrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, 作者: 寬宏大量 時間: 2025-3-28 17:36
Al,O, Deposition and Characterisation,options for the chemical precursor. The details of the more established ALD process are given briefly in Sect.?., where we also describe the general procedures used for sample preparation. Finally, in Sect.?. we describe the principal experimental techniques employed to characterise the samples.作者: 時間等 時間: 2025-3-28 22:17
Influence of Deposition Parameters, are the substrate temperature, the relative concentrations of the aluminium precursor and any additional reactants, and the precursor species itself. The following sections will describe the influence of each of these parameters in turn. The main results are presented in terms of . and .. Values for . and . are also presented when available.作者: Semblance 時間: 2025-3-29 02:52
Conclusion, Al.O. passivation layers, enabling industrial application to photovoltaic devices. A summary of the major conclusions in each of these areas is given here. Further conclusions not mentioned here may be found in the final sections of Chaps.?.–..作者: 極力證明 時間: 2025-3-29 07:06
2190-5053 rfaces and semiconductor surface recombination mechanisms.Re..The book addresses the problem ofpassivation at the surface of crystalline silicon solar cells. Morespecifically, it reports on a high-throughput, industrially compatibledeposition method for Al2O3, enabling its application to commercial 作者: 急性 時間: 2025-3-29 08:12
Introduction,mercial solar cell design, illustrating how increasing recombination significantly reduces cell efficiency. The effective suppression of surface recombination, referred to as surface “passivation” is thus essential to the realisation of high-efficiency photovoltaic devices.作者: Incumbent 時間: 2025-3-29 11:54 作者: 災(zāi)難 時間: 2025-3-29 18:05
