標(biāo)題: Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus [打印本頁(yè)] 作者: mature 時(shí)間: 2025-3-21 17:43
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors影響因子(影響力)
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors被引頻次
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors被引頻次學(xué)科排名
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors年度引用
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors年度引用學(xué)科排名
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors讀者反饋
書(shū)目名稱(chēng)Neutron Transmutation Doping in Semiconductors讀者反饋學(xué)科排名
作者: 音樂(lè)等 時(shí)間: 2025-3-21 22:08 作者: BROW 時(shí)間: 2025-3-22 01:19 作者: 擺動(dòng) 時(shí)間: 2025-3-22 05:28 作者: 慢慢啃 時(shí)間: 2025-3-22 10:50
J. E. Morrissey,T. Tillinghast,A. P. Ferro,B. J. Baligaen kann — ein Simultanmodell, welches die Standort-und Tourenplanung ?gleichberechtigt” miteinander verknüpft, zu erzwingen. Ein solches Simultanmodell ist allerdings i. d. R. derartig komplex, da? zur Ermittlung guter zul?ssiger L?sungen nur noch der Rückgriff auf (primale) Heuristiken verbleibt. B作者: insurgent 時(shí)間: 2025-3-22 14:56 作者: 侵蝕 時(shí)間: 2025-3-22 17:24 作者: Phenothiazines 時(shí)間: 2025-3-22 22:46
H. M. Hobgood,T. T. Braggins,J. C. Swartz,R. N. Thomas作者: 新奇 時(shí)間: 2025-3-23 02:45
Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formationation for doping other semiconductor material as well, such as germanium, arsenic or III-V compounds, this application appears to founder on the considerably greater radiation protection problems involved.作者: 綠州 時(shí)間: 2025-3-23 06:42
Study of the Spatial Characteristics of the Breakdown Process in Silicon PN-Junctionsdegree of dopant uniformity through NTD. Then, using the tool of a scanned, finely focused, optical beam, we indicate how the spatial area and general characteristics of breakdown can be visualized in silicon PN-junctions fabricated from NTD and other types of silicon. We will present scans of the p作者: 震驚 時(shí)間: 2025-3-23 12:45
Neutron Doping of Silicon in the Harwell Research Reactors applied for Quality Assurance and Control are described..Measurements of decay rates of induced radioactivity and the system of clearance and certification such as to allow the silicon to be internationally transported as “Exempt Material,” as defined in IAEA Regulations, are dealt with..Plans are 作者: 膽汁 時(shí)間: 2025-3-23 14:47 作者: 永久 時(shí)間: 2025-3-23 21:00
An Automated Irradiation Facility for Neutron Doping of Large Silicon Ingots long, 87 mm in diameter; the future extension of the diameter to 112 mm is feasible; the thermal neutron flux is equal to 2.7xl0.n cm.s. with a thermal to fast (> 100 keV) neutron flux ratio equal to about 400. The irradiation position in the channel is optimized by displacement during the reactor 作者: construct 時(shí)間: 2025-3-23 22:42
High Precision Irradiation Techniques for NTD Silicon at the University of Missouri Research Reactors are used to obtain radial uniformity of better than ± \% up to 86 mm diameter. Present irradiation positions consist of two 750 mm long x 85 mm diameter, two 750 mm long x 60 mm diameter, seven 750 mm long x 80 mm diameter, and a high precision variable flux facility. The present MURR capacity is 作者: Arrhythmia 時(shí)間: 2025-3-24 03:14
Atomic Displacement Effects in Neutron Transmutation Doping is needed to more fully characterize and identify residual lattice imperfections which remain in irradiated silicon after annealing to temperatures > 500°C, and to understand the interaction processes in their formation. Although the concentrations of residual defects are relatively low, these resi作者: POWER 時(shí)間: 2025-3-24 08:02 作者: 溝通 時(shí)間: 2025-3-24 13:59 作者: critic 時(shí)間: 2025-3-24 17:46 作者: Picks-Disease 時(shí)間: 2025-3-24 20:21
Roger W. Phillipssten- und Zeitaufwand wieder revidieren l?sst. Jeder Standort weist eine Vielzahl spezifischer positiver und negativer Standortfaktoren auf, die in ihrer Gesamtheit einem erfolgreichen Gesch?ftsmodell zu- oder abtr?glich sein k?nnen. Zuweilen entscheiden am ausgew?hlten Standort nur wenige Meter dar作者: 辯論的終結(jié) 時(shí)間: 2025-3-25 02:34
J. M. Meese,Paul J. Glairontlich geführter Diskussionen und massiver Proteste. Aktiven Widerstand gegen derartige Objekte leisten insbesondere die in unmittelbarer Nachbarschaft zu den potentiellen Standorten lebenden Personen. Eine Standortplanung für die als Locally Unwanted Land Uses (LULUs) bezeichneten Einrichtungen darf作者: 浸軟 時(shí)間: 2025-3-25 07:06 作者: shrill 時(shí)間: 2025-3-25 08:14 作者: 典型 時(shí)間: 2025-3-25 15:08
J. L. Bourdon,G. Restelliortzeiten zurückzuführen sind, gebildet. Die Messung von Transportkosten bzw. ihre Umrechnung in Allokationskosten ist allerdings problematisch, wenn die ?lokale“ Distribution einen unabdingbaren Bestandteil des Lokations-Allokations-Modells darstellt und die Güterauslieferung innerhalb von Fahrzeug作者: Cardioversion 時(shí)間: 2025-3-25 19:52
The NTD Process—A New Reactor Technologyhave taken place. In particular, we would like to thank John Cleland and Dick Wood of Oak Ridge National Laboratory for hosting the first NTD Conference and for suggesting that a second conference be held at the University of Missouri. Our sincere appreciation extends also to the Monsanto Corporatio作者: capsule 時(shí)間: 2025-3-25 23:38
Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralskidioactive isotopes that might result from activation of impurities initially present in the crystals. A computer study was used to predict the nuclides most likely to occur. Results from the two methods of analysis—radioactivity decay rate and gamma spectroscopy—were consistent with each other. Meth作者: nascent 時(shí)間: 2025-3-26 00:22
Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formationn, Si-31 activity, surface contamination and P-32 activity stemming from the silicon are of significance. While the Si-31 activity will have decayed to zero after about 4 days, the surface contamination can be removed by an etching treatment applied to the silicon. The P-32 activity produced by furt作者: 忍耐 時(shí)間: 2025-3-26 06:24
Application of NTD Silicon for Power Deviceswidened drastically in concordance with the usual price pattern of semiconductor products..The yield impact in the device industry has completely changed the projected float zone silicon consumption for at least the next five years..A survey of these phenomena is presented.作者: Harpoon 時(shí)間: 2025-3-26 09:14 作者: 使糾纏 時(shí)間: 2025-3-26 14:27
NTD Silicon on High Power Devicesoduce non-uniform electrical characteristics from device to device, especially in blocking voltage, forward voltage drop, and switching characteristics. Large area NTD (neutron transmutation doped) silicon. has become available from different suppliers since 1975. This type of silicon has a narrow r作者: 天真 時(shí)間: 2025-3-26 18:55
Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Mindium or gallium doped silicon substrates. Considerations of detector operating temperature and sensitivity require that residual shallow acceptor impurities, such as boron, in these highly doped silicon substrates be compensated as closely as possible by donor impurities. Highly uniform and accura作者: endarterectomy 時(shí)間: 2025-3-27 01:01 作者: BOOR 時(shí)間: 2025-3-27 04:37
Resistivity Fluctuations in Highly Compensated NTD SiliconThese calculations are compared with experimental data taken on silicon which has been compensated by the NTD process to resistivities as high as 100,000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a f作者: 偏狂癥 時(shí)間: 2025-3-27 05:40 作者: 魯莽 時(shí)間: 2025-3-27 11:42
Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Emeans of a 20-foil activation technique. This technique employs the most recent version of the SAND-II computer code, which iteratively unfolds the neutron spectrum by fitting the foil activities. A Monte Carlo routine was also employed to calculate standard-deviation errors in each neutron-energy g作者: 傻 時(shí)間: 2025-3-27 14:05
Neutron Doping of Silicon in the Harwell Research Reactorsce 1975. Ton quantities of material have been irradiated for various customers and the high utilization of the two reactors, with their offset operating cycles, guarantees production throughout the entire year..The present facilities offer a capacity of some 15 tons of medium resistivity material pe作者: AGOG 時(shí)間: 2025-3-27 17:53 作者: languor 時(shí)間: 2025-3-28 01:27 作者: audiologist 時(shí)間: 2025-3-28 03:18 作者: 榮幸 時(shí)間: 2025-3-28 10:19 作者: VOC 時(shí)間: 2025-3-28 11:45
Atomic Displacement Effects in Neutron Transmutation Dopingransmutation doping. Recoiling atoms from fast neutron interactions are the dominant contribution to the energy available for producing atomic displacements. Energy deposition considerations indicate that defect clusters are created but amorphous zone formation is highly unlikely. Extensive defect r作者: FOLLY 時(shí)間: 2025-3-28 15:30 作者: 用樹(shù)皮 時(shí)間: 2025-3-28 19:32
Resistivity Fluctuations in Highly Compensated NTD Silicon000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a function of the initial starting material resistivity fluctuation.作者: Meager 時(shí)間: 2025-3-29 00:56
Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Processhow that a tenfold increase in substrate concentration increased inverse beta by a factor of approximately ten. Minority carrier diffusion length in the substrate was reduced from approximately 9 to 3 microns as a result of the irradiation. Overall results will be compared with I.L made on epitaxial substrates with comparable doping.作者: 障礙物 時(shí)間: 2025-3-29 04:16
Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-E. The significance of this information with respect to the interpretations of various neutron radiation damage experiments is discussed. A general observation about neutron radiation damage in silicon is also suggested.作者: GROSS 時(shí)間: 2025-3-29 08:37 作者: esoteric 時(shí)間: 2025-3-29 13:28 作者: 間諜活動(dòng) 時(shí)間: 2025-3-29 18:01 作者: 指令 時(shí)間: 2025-3-29 21:11 作者: Optimum 時(shí)間: 2025-3-30 00:14 作者: 行為 時(shí)間: 2025-3-30 07:41 作者: 審問(wèn),審訊 時(shí)間: 2025-3-30 08:18
Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeare作者: 被詛咒的人 時(shí)間: 2025-3-30 16:07
978-1-4684-8251-5Plenum Press, New York 1979作者: 變形詞 時(shí)間: 2025-3-30 19:09
Application of NTD Silicon for Power Deviceswidened drastically in concordance with the usual price pattern of semiconductor products..The yield impact in the device industry has completely changed the projected float zone silicon consumption for at least the next five years..A survey of these phenomena is presented.作者: 芭蕾舞女演員 時(shí)間: 2025-3-30 23:29 作者: 放氣 時(shí)間: 2025-3-31 02:00 作者: 注意 時(shí)間: 2025-3-31 06:25 作者: 我怕被刺穿 時(shí)間: 2025-3-31 12:33
The Minority Carrier Lifetime of Neutron Doped SiliconA study was performed to establish the minority carrier lifetime of neutron doped silicon as a function of various parameters, e.g., the resistivity, the reactor, and the starting material. It was found that lifetime was strongly dependent on resistivity and purity and weakly on starting material and reactor.作者: perjury 時(shí)間: 2025-3-31 16:00
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