標題: Titlebook: Nanowire Field Effect Transistors: Principles and Applications; Dae Mann Kim,Yoon-Ha Jeong Book 2014 Springer Science+Business Media New Y [打印本頁] 作者: ARGOT 時間: 2025-3-21 16:33
書目名稱Nanowire Field Effect Transistors: Principles and Applications影響因子(影響力)
書目名稱Nanowire Field Effect Transistors: Principles and Applications影響因子(影響力)學科排名
書目名稱Nanowire Field Effect Transistors: Principles and Applications網(wǎng)絡公開度
書目名稱Nanowire Field Effect Transistors: Principles and Applications網(wǎng)絡公開度學科排名
書目名稱Nanowire Field Effect Transistors: Principles and Applications被引頻次
書目名稱Nanowire Field Effect Transistors: Principles and Applications被引頻次學科排名
書目名稱Nanowire Field Effect Transistors: Principles and Applications年度引用
書目名稱Nanowire Field Effect Transistors: Principles and Applications年度引用學科排名
書目名稱Nanowire Field Effect Transistors: Principles and Applications讀者反饋
書目名稱Nanowire Field Effect Transistors: Principles and Applications讀者反饋學科排名
作者: 輕信 時間: 2025-3-21 21:47 作者: 火花 時間: 2025-3-22 01:33 作者: Lucubrate 時間: 2025-3-22 04:44 作者: 混合物 時間: 2025-3-22 12:44
Silicon Nanowire Field-Effect Transistor, are highlighted, thereby bringing out features unique to SNWFET. Also, an emphasis is placed upon the underlying device physics rather than the device modeling per se. The goal of this chapter is to provide a background by which to comprehend the theories being developed rapidly for SNWFETs.作者: 灰心喪氣 時間: 2025-3-22 15:54 作者: moratorium 時間: 2025-3-22 19:12 作者: TAIN 時間: 2025-3-22 22:24 作者: 背信 時間: 2025-3-23 02:35 作者: outer-ear 時間: 2025-3-23 08:44
Yang-Kyu Choi,Dong-Il Moon,Ji-Min Choi,Jae-Hyuk Ahnosophy and the history of ideas, but to all those dealing with Anglo-German reception during the nineteenth century, reveals Schelling to be a kind of uncanny presence underwriting British thought..978-3-030-07113-4978-3-319-95906-1作者: antecedence 時間: 2025-3-23 13:05 作者: NOTCH 時間: 2025-3-23 17:19 作者: AVID 時間: 2025-3-23 20:31 作者: brother 時間: 2025-3-23 23:01
Book 2014l and chemical sensors, displays and atomic scale light emitting diodes. .Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.作者: Urologist 時間: 2025-3-24 05:11 作者: 草率女 時間: 2025-3-24 08:57
Nanowire Field Effect Transistors: Principles and Applications978-1-4614-8124-9作者: Hiatus 時間: 2025-3-24 12:56
Carrier Concentration and Transport, semiconductor devices has been attributed primarily to the drift and diffusion. With the downsizing of the semiconductor devices, however, the ballistic transport becomes important as well as tunneling. The transport processes are compactly discussed.作者: 暫時休息 時間: 2025-3-24 17:50 作者: GRACE 時間: 2025-3-24 22:56
Book 2014rs (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. .During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEP作者: 信徒 時間: 2025-3-25 00:27 作者: 整潔漂亮 時間: 2025-3-25 04:31
Fabrication of Nanowires and Their Applications,cessing CNTs and various kinds of nanowires in silicon as well as compound semiconductors are elaborated. Finally, the transfer printing techniques are highlighted, enabling the fabrication of electronic circuits on flexible and diverse substrates by utilization of the releasable nano- and microstructures from donor substrates.作者: Acetabulum 時間: 2025-3-25 09:11
Characterization of Nanowire Devices Under Electrostatic Discharge Stress Conditions,eover, the failure mechanism of nanowire FETs subject to ESD stresses is investigated by means of electrical characterization, optical microscopic observation, and failure analysis. Finally, the optimal nanowire structure and design window are proposed in the light of the ESD performance evaluations presented.作者: 上漲 時間: 2025-3-25 14:57
Nanowire BioFETs: An Overview,theses of vertical and horizontal nanowires are presented and the ensuing nanowires are characterized. Also, the top-down and bottom-up approaches for processing nanowires are compared by taking as criteria the process complexity and quality of the nanowires produced. Finally, the future prospects of bio-sensing are presented.作者: Jejune 時間: 2025-3-25 19:44 作者: 依法逮捕 時間: 2025-3-25 20:56 作者: chance 時間: 2025-3-26 01:25
http://image.papertrans.cn/n/image/661171.jpg作者: abreast 時間: 2025-3-26 08:10 作者: 起皺紋 時間: 2025-3-26 09:22
978-1-4939-4572-6Springer Science+Business Media New York 2014作者: reflection 時間: 2025-3-26 14:28 作者: amorphous 時間: 2025-3-26 16:57
Quantum Wire and Sub-Bands,ived from it. In terms of the impact made by the theory, the quantum mechanics is one of the greatest theories. In this chapter, the essential features of the quantum mechanics are compactly highlighted, using a few examples. The examples chosen for discussion are directly related to the design and 作者: 出血 時間: 2025-3-27 00:06 作者: enterprise 時間: 2025-3-27 01:19
,P–N Junction Diode: I–V Behavior and Applications,nductor device physics. Thus, the I–V modeling of the junction diode should provide a convenient basis for modeling other kinds of semiconductor devices, including the silicon nanowire field effect transistor (SNWFET). Additionally, the p–n junction is used extensively as photodiodes, solar cells, l作者: MULTI 時間: 2025-3-27 05:26
Silicon Nanowire Field-Effect Transistor,information technology. Because of the simplicity of structure and low cost of fabrication, it lends to a large scale integration for the multifunctional system-on-chip (SOC) applications. Moreover, the device has been relentlessly downsized for higher performance and integration. The physical barri作者: 態(tài)學 時間: 2025-3-27 11:04
Fabrication of Nanowires and Their Applications,of nanowires as a key element of the top-down processing technique is described in conjunction with the optical, electron beam, and spacer lithography. Also, the process details of various kinds of FETs, such as FinFETs, Mug-FET, and gate-all-around nanowire FETs, are presented. An emphasis is place作者: Aggregate 時間: 2025-3-27 15:26 作者: 表示向前 時間: 2025-3-27 17:59
Green Energy Devices, the efficiency of energy consumption. In this context, the nanowire tunneling field effect transistor (NTFET) is considered as the low power device and its ON and OFF states are elaborated, based upon the voltage controlled energy band.Moreover, the operation of NTFETs is analyzed in terms of the s作者: Obvious 時間: 2025-3-28 01:30
Nanowire Field Effect Transistors in Optoelectronics, light absorption, generation of e–h pairs and the carrier transport, and the parameters dictating sensitivities, e.g., the wavelengths of light and the materials used are examined. Moreover, the 1-D nanostructures as a platform for photodetectors are highlighted, in conjunction with carbon nanotube作者: floodgate 時間: 2025-3-28 05:06
Nanowire BioFETs: An Overview,clinical diagnostics, health care, security, environmental monitoring, etc. The operation and sensing mechanism of BioFETs and ion-sensitive FETs are elaborated on a molecular level, based upon the molecular recognition between target and probe molecules and the input gate voltage and output ON curr作者: 完整 時間: 2025-3-28 07:46
Lab on a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology,ion and nanomedicine. This tight interaction led to the emergence of a new class of bioinspired systems. These systems are based upon utilizing nanomaterials such as nanoparticles, carbon nanotubes, or nanowires as transducers for producing novel sensor devices, or sophisticated drug delivery agents作者: Indict 時間: 2025-3-28 13:49
Nanowire FET Circuit Design: An Overview, of NWFETs are introduced to meet the system requirements, with pros and cons. The bottom-up-processed transistor provides the full performance in transistor level, but the integration capability is bounded by the single type of devices per layer and logic design for NMOS and PMOS combined structure作者: acrophobia 時間: 2025-3-28 15:51
und der Natur, wie sie von Schelling in den Jahren 1796 — 1798 vorbereitet worden ist. Sie bieten aber Anhaltspunkte im Blick auf eine Beurteilung der . im Kontext von Schellings frühem Idealismus, insbesondere im Zusammenhang der Aporie des Absoluten, die das Merkmal seiner Arbeiten bis 1795 ist. N作者: 腐蝕 時間: 2025-3-28 21:03
Yang-Kyu Choi,Dong-Il Moon,Ji-Min Choi,Jae-Hyuk Ahne central importance of Schelling throughout the British litThis book examines the various ways in which the German philosopher Friedrich Schelling was read and responded to by British readers and writers during the nineteenth century. Challenging the idea that Schelling’s reception was limited to t作者: Restenosis 時間: 2025-3-28 23:12 作者: 急性 時間: 2025-3-29 06:12
Byung-Gook Park-based mash-ups and the life sciences. Such cooperating systems have to automatically and efficiently match, exchange, transform and integrate large data sets from different sources and of different structure in order to enable seamless data exchange and transformation. .The book edited by Bellahsen作者: 雜役 時間: 2025-3-29 08:15
Mehrdad Shaygan,M. Meyyappan,Jeong-Soo Lee-based mash-ups and the life sciences. Such cooperating systems have to automatically and efficiently match, exchange, transform and integrate large data sets from different sources and of different structure in order to enable seamless data exchange and transformation. .The book edited by Bellahsen作者: 殘暴 時間: 2025-3-29 13:20
M. Meyyappan,Jeong-Soo Leeolution and schema merging.Scholarly chapters enabling a lea.Requiring heterogeneous information systems to cooperate and communicate has now become crucial, especially in application areas like e-business, Web-based mash-ups and the life sciences. Such cooperating systems have to automatically and 作者: 刺激 時間: 2025-3-29 15:55 作者: 勉強 時間: 2025-3-29 23:26 作者: constitutional 時間: 2025-3-30 00:12
