標(biāo)題: Titlebook: Nanotechnology for Electronic Materials and Devices; Anatoli Korkin,Evgeni Gusev,Serge Luryi Book 2007 Springer-Verlag US 2007 CMOS.DRAM.e [打印本頁(yè)] 作者: 明顯 時(shí)間: 2025-3-21 20:09
書(shū)目名稱Nanotechnology for Electronic Materials and Devices影響因子(影響力)
書(shū)目名稱Nanotechnology for Electronic Materials and Devices影響因子(影響力)學(xué)科排名
書(shū)目名稱Nanotechnology for Electronic Materials and Devices網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Nanotechnology for Electronic Materials and Devices網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Nanotechnology for Electronic Materials and Devices被引頻次
書(shū)目名稱Nanotechnology for Electronic Materials and Devices被引頻次學(xué)科排名
書(shū)目名稱Nanotechnology for Electronic Materials and Devices年度引用
書(shū)目名稱Nanotechnology for Electronic Materials and Devices年度引用學(xué)科排名
書(shū)目名稱Nanotechnology for Electronic Materials and Devices讀者反饋
書(shū)目名稱Nanotechnology for Electronic Materials and Devices讀者反饋學(xué)科排名
作者: myopia 時(shí)間: 2025-3-21 20:31
Samuel S. Maose necessary changes using strategies, structures, and practices that take advantage ofcapitalism‘s strengths.?Its goal is to demonstrate how a reimagined financial system can be more inclusive and accountable to all. By shifting away from extractive, short-term practices in the name of shareholder 作者: Thyroiditis 時(shí)間: 2025-3-22 02:25
Gennadi Bersuker,Byoung H. Lee,Anatoli Korkin,Howard R. Huffated either in under-graduation as well as in the post graduation in the several exact programs but no earlier requirements were needed from the students unless the basic physics and mathematics. At the same time, the book must be original enough to contribute to the existing literature but with no 作者: 宴會(huì) 時(shí)間: 2025-3-22 08:16
italism‘s strengths.?Its goal is to demonstrate how a reimagined financial system can be more inclusive and accountable to all. By shifting away from extractive, short-term practices in the name of shareholder 978-3-031-22616-8978-3-031-22614-4作者: 暫時(shí)中止 時(shí)間: 2025-3-22 09:38 作者: ascetic 時(shí)間: 2025-3-22 16:15
R. A. Rao,M. A. Sadd,R. F. Steimle,C. T. Swift,H. Gasquet,M. Stokergrams but no earlier requirements were needed from the students unless the basic physics and mathematics. At the same time, the book must be original enough to contribute to the existing literature but with no 978-981-16-3546-5978-981-16-3544-1Series ISSN 1867-8440 Series E-ISSN 1867-8459 作者: 侵害 時(shí)間: 2025-3-22 19:11
1571-5744 een the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and techn978-1-4419-3612-7978-0-387-49965-9Series ISSN 1571-5744 Series E-ISSN 2197-7976 作者: 兒童 時(shí)間: 2025-3-22 21:23
A. Asenov,A. R. Brown,B. Cheng,J. R. Watling,G. Roy,C. Alexander作者: 光滑 時(shí)間: 2025-3-23 04:16
Nanotechnology for Electronic Materials and Devices作者: 一再困擾 時(shí)間: 2025-3-23 09:12
Strategies of Nanoscale Semiconductor Lasers,tor gain medium is scaled down from the bulk to the nanometer scale. Consequently, semiconductor lasers built with nanoscale active media are expected to exhibit extraordinary features such as great color range, high optical gain, and low lasing threshold. Indeed, miniaturized lasers using nanoscale作者: Irritate 時(shí)間: 2025-3-23 12:35
Silicon Nanocrystal Nonvolatile Memory,us nature of charge storage. In other words, an underlying oxide defect leads to charge loss only from charge storage sites in its immediate proximity. Once the impact of defect-mediated charge loss is mitigated, charge loss is primarily due to tunneling and the tunnel oxide in these devices can be 作者: 真 時(shí)間: 2025-3-23 14:28 作者: 樂(lè)意 時(shí)間: 2025-3-23 20:11
Simulation of Nano-CMOS Devices: From Atoms to Architecture,that the scaling of the CMOS transistors will continue in the next two decades, it is widely recognized that intrinsic parameter fluctuations introduced by the discreteness of charge and matter will be a major factor limiting the integration of such devices with molecular dimensions in giga-transist作者: 極端的正確性 時(shí)間: 2025-3-24 01:03 作者: SEVER 時(shí)間: 2025-3-24 06:22 作者: conjunctiva 時(shí)間: 2025-3-24 09:49
Nanostructure Science and Technologyhttp://image.papertrans.cn/n/image/661098.jpg作者: 裹住 時(shí)間: 2025-3-24 14:28 作者: Lethargic 時(shí)間: 2025-3-24 18:25 作者: 不透明性 時(shí)間: 2025-3-24 21:34
Nanotechnology for Electronic Materials and Devices978-0-387-49965-9Series ISSN 1571-5744 Series E-ISSN 2197-7976 作者: 協(xié)定 時(shí)間: 2025-3-24 23:44
A Hybrid Route from CMOS to Nano and Molecular Electronics,transistors; if the current trend toward higher and higher integration continues, an Avogadro number of transistors will be manufactured in the next 20 years–in a way, microelectronics is already “molecular” electronics, if not for the transistor size for the number of transistors at least. Hence, the following question: .作者: Coterminous 時(shí)間: 2025-3-25 05:03
Book 2007 for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics techn作者: entice 時(shí)間: 2025-3-25 11:07
From SOI Basics to Nano-Size MOSFETs, that in a bulk silicon metal-oxide-semiconductor (MOS) transistor, only the superficial layer (0.1–0.2 μm thick) is actually useful for electron transport, whereas the substrate is causing undesirable effects to occur. 作者: anthesis 時(shí)間: 2025-3-25 13:18
1571-5744 micro- and nano-electronics research.Written by leading expThe high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level作者: Apogee 時(shí)間: 2025-3-25 16:39
Scanning Force Microscopies for Imaging and Characterization of Nanostructured Materials,omanipulation of small-size assemblies of atoms and/or molecules on crystal surfaces in order to construct nanodevices. Furthermore, local determination of surface morphology and mechanical as well as electronic properties might be important for practical functioning of various nanosensors and nanodevices in biological objects.作者: ARBOR 時(shí)間: 2025-3-25 21:23 作者: CAND 時(shí)間: 2025-3-26 01:00
system can be more inclusive and accountable to all.Draws o.The global challenges confronting us — climate change, poverty, inequality, and many others — can feel overwhelming. Those of us who believe in market-based solutions to these challenges get even more disheartened when we regularly see our作者: promote 時(shí)間: 2025-3-26 05:38
G. F. Cerofolini,D. Mascolo system can be more inclusive and accountable to all.Draws o.The global challenges confronting us — climate change, poverty, inequality, and many others — can feel overwhelming. Those of us who believe in market-based solutions to these challenges get even more disheartened when we regularly see our作者: 笨重 時(shí)間: 2025-3-26 11:34
Sorin Cristoloveanut-based solutions to these challenges get even more disheartened when we regularly see our existing capitalist system failing us, often causing more harm than good. Many examples show how the capitalist tools of finance and investment can and make real, positive impact. Approaches like blended finan作者: 高歌 時(shí)間: 2025-3-26 15:39
Samuel S. Maot-based solutions to these challenges get even more disheartened when we regularly see our existing capitalist system failing us, often causing more harm than good. Many examples show how the capitalist tools of finance and investment can and make real, positive impact. Approaches like blended finan作者: 以煙熏消毒 時(shí)間: 2025-3-26 16:55
R. A. Rao,M. A. Sadd,R. F. Steimle,C. T. Swift,H. Gasquet,M. Stokeron from limited to unlimited diffusion that may also be applThis book discusses many of the common scaling properties observed in some nonlinear dynamical systems mostly described by mappings. The unpredictability of the time evolution of two nearby initial conditions in the phase space together wit作者: Esophagitis 時(shí)間: 2025-3-27 00:53 作者: 頭盔 時(shí)間: 2025-3-27 03:42 作者: Fecal-Impaction 時(shí)間: 2025-3-27 06:19 作者: Expand 時(shí)間: 2025-3-27 11:27 作者: 相符 時(shí)間: 2025-3-27 15:12
Silicon Nanocrystal Nonvolatile Memory,caling of floating-gate (FG) nonvolatile memory cells has been limited to bottom oxide thicknesses in the range of 80–110 ? primarily because of the vulnerability to charge loss from the conducting FG through isolated defects in the tunnel oxide that arise after repeated write/erase operations. As a作者: hemoglobin 時(shí)間: 2025-3-27 21:33 作者: cringe 時(shí)間: 2025-3-28 01:47
Scanning Force Microscopies for Imaging and Characterization of Nanostructured Materials,ll as exciting prospects of new emerging technologies (quantum electronics, biochips, etc.) are prompting a huge interest in nanotechnology and the science of nanostructured materials. In particular, there is a need to develop efficient technologies for the preparation of surfaces with desired struc作者: RODE 時(shí)間: 2025-3-28 02:55 作者: 表示向下 時(shí)間: 2025-3-28 06:37 作者: 異端邪說(shuō)2 時(shí)間: 2025-3-28 12:15
10樓作者: 一加就噴出 時(shí)間: 2025-3-28 15:28
10樓作者: ungainly 時(shí)間: 2025-3-28 19:15
10樓
