標(biāo)題: Titlebook: Nanoscaled Semiconductor-on-Insulator Structures and Devices; Steve Hall,Alexei N. Nazarov,Vladimir S. Lysenko Conference proceedings 2007 [打印本頁] 作者: Guffaw 時間: 2025-3-21 16:41
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices影響因子(影響力)
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices影響因子(影響力)學(xué)科排名
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices網(wǎng)絡(luò)公開度
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices被引頻次
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices被引頻次學(xué)科排名
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices年度引用
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices年度引用學(xué)科排名
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices讀者反饋
書目名稱Nanoscaled Semiconductor-on-Insulator Structures and Devices讀者反饋學(xué)科排名
作者: Ligneous 時間: 2025-3-21 22:03
Status and trends in SOI nanodevicesulti-gate Si, SiGe, Ge and GaAs MOSFETs and Nanowires realized with various channel orientations are also addressed. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined.作者: 使迷醉 時間: 2025-3-22 03:49
High-κ Dielectric Stacks for Nanoscaled SOI Devicess paper sets out the basic issues and physics associated with both hi- κ/metal gate and UTB from a device perspective, and establishes the advantages associated with merging the two approaches. A review of the state-of the art devices is undertaken also which serves to emphasize the great potential and progress of this technology.作者: ANTI 時間: 2025-3-22 05:23 作者: maintenance 時間: 2025-3-22 10:53
SiGeC HBTs: impact of C on Device Performance?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?.作者: Retrieval 時間: 2025-3-22 14:20 作者: Popcorn 時間: 2025-3-22 17:48 作者: 傾聽 時間: 2025-3-22 23:05
Nanowire Quantum Effects in Trigate SOI MOSFETsnsconductance when measured as a function of the gate voltage. These oscillations are visible at low temperature (< 30K) in samples with a 45 × 82nm cross section and at room temperature in devices with a 11nm × 48nm cross section.作者: 貪婪性 時間: 2025-3-23 02:18
Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETsrt the obtained results. It is demonstrated that the appearance of “substrate-related” transitions, their position and amplitude depend strongly on the substrate doping, space-charge conditions at substrate-BOX interface, temperature and moreover become more pronounced with device downscaling.作者: 灰心喪氣 時間: 2025-3-23 07:37 作者: occult 時間: 2025-3-23 10:12 作者: Thyroxine 時間: 2025-3-23 17:16
https://doi.org/10.1007/978-1-4020-6380-0Anode; CMOS; FinFET; IC; MOSFET; Nanotube; Potential; Transistor; electronics; heterojunction bipolar transis作者: 不近人情 時間: 2025-3-23 18:09 作者: Keshan-disease 時間: 2025-3-24 00:32
Nanoscaled Semiconductor-on-Insulator Structures and Devices978-1-4020-6380-0Series ISSN 1874-6500 Series E-ISSN 1874-6535 作者: garrulous 時間: 2025-3-24 04:04
MuGFET CMOS Process with Midgap Gate MaterialAn increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).作者: Basal-Ganglia 時間: 2025-3-24 08:20
Doping Fluctuation Effects in Multiple-Gate SOI MOSFETsRandom doping fluctuation effects are studied in multiple-gate SOI MOSFETs (MuGFETs) using numerical simulation. The presence of a single doping impurity atom increases threshold voltage. Electrical parameters vary with the physical location of the impurity atom.作者: intuition 時間: 2025-3-24 12:14 作者: sultry 時間: 2025-3-24 14:57
Non-Planar Devices for Nanoscale CMOStion, non-standard fabrication process modules for triplegate nanoscale MOSFETs and sub-10 nm nanowires are presented. Alternatives to costly extreme ultraviolet (EUV) lithography are proposed as well as a self-aligned nickel silicide module to reduce inherent parasitic access resistances.作者: 抱負(fù) 時間: 2025-3-24 19:17
SiGe Nanodots in Electro-Optical SOI Devicescular-beam growth are the scope of this article. We focus on the fundamental aspects and device applications of the small size dots whose electronic states resemble those of an atom even at room temperature.作者: NIB 時間: 2025-3-25 00:19
Noise Research of Nanoscaled SOI Devicesownscaling as well as the influence of the additional noise sources appearing in the nanoscaled devices on their noise characteristics are explained. It is shown that the drastic changes in the noise performance of the devices can take place as a result of their nanocsaling.作者: exorbitant 時間: 2025-3-25 05:32
Electrical Characterization and Special Properties of FINFET Structuresstructures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed.作者: linear 時間: 2025-3-25 09:14
Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogion implantation into silicon dioxide followed by Ge segregation to the interface between the directly bonded silicon and silicon dioxide wafers. The method is also compatible with A3B5 thin film formation, as shown for an InSb film. Thermodynamic, kinetic and lattice mismatch parameter influences o作者: Fatten 時間: 2025-3-25 13:02
Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrateshalf the range of the fluorine implant. Finally, fluorine implantation is applied to SOI wafers, with the aim of separating the vacancy-fluorine clusters in the active layer from interstitial dislocation loops below the buried oxide layer. These results show a high energy fluorine implant into SOI s作者: 傳授知識 時間: 2025-3-25 18:13
Conference proceedings 2007n, will stimulate the development of other novel devices and applications. Thus the semiconductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and idea作者: 津貼 時間: 2025-3-25 21:01 作者: Ardent 時間: 2025-3-26 01:49
of medical products and the development of new biological assays for diagnostic and pharmaco-toxicological screening, underlines the need for vigilance regarding the correct and safe use of animal cells as substrates. This book is therefore very timely and should prove to be a highly valuable text, finding a978-94-010-6061-5978-94-011-4916-7作者: 整理 時間: 2025-3-26 04:36 作者: Inculcate 時間: 2025-3-26 12:04
Huda Abdel Wahab El Mubarek,Peter Ashburnol by specialists is required throughout acquisition, processing and interpretation of the data..Even with data acquired to the limits of available technology, shallow gas surveys should be viewed as a preventive measure, minimising the possibility of encountering shallow gas, and therefore reducing作者: foreign 時間: 2025-3-26 14:54
Vikram Passi,Benoit Olbrechts,Jean-Pierre Raskin,Jens Bolten,Thomas Mollenhauer,Thorsten Wahlbrink,Mnversion is also a promising technique, and with further development and linked to velocity modelling it will become a powerful tool in shallow gas prediction..Direct use of seismic velocities in shallow gas prediction requires refracted arrivals. These data are of special importance where no boreho作者: confide 時間: 2025-3-26 18:05
are interactive workstations which thereby are substantially enhancing the efficiency and accuracy of the seismic analysis by providing the ability to interactively interpret the data and measure seismic horizon attributes..Our aim to improve the reliability of the shallow gas prediction can only be作者: GRATE 時間: 2025-3-26 21:00
Toshiro Hiramotoial errors..Also of crucial importance is the role of those responsible for onboard QC who, if they do not understand the principles of seismic acquisition, may not make the correct decision when circumstances out of the ordinary arise..An account of some essential QC techniques will be presented, a作者: 貪婪地吃 時間: 2025-3-27 01:19
Anatoly V. Dvurechenskii,A. I. Yakimov,N. P. Stepina,V. V. Kirienko,P. L. Novikov knowledge: more careful processing of site survey data including better amplitude control in the shallow section, detailed velocity analyses in the vicinity of well locations and migration of key lines; use of extra analysis techniques such as residual wavefield and forward modelling for Amplitude 作者: macrophage 時間: 2025-3-27 08:34
Jean-Pierre Colingeare interactive workstations which thereby are substantially enhancing the efficiency and accuracy of the seismic analysis by providing the ability to interactively interpret the data and measure seismic horizon attributes..Our aim to improve the reliability of the shallow gas prediction can only be作者: Sleep-Paralysis 時間: 2025-3-27 11:14
Joachim Knoch,Hans Lüthnanimously recognized that further efforts are still to be concentrated on the improvement of current concepts and development of advanced technologies. Some of the areas requiring substantial additional efforts are plasma exhaust fuel c1ean-up, tritium pellet injection, processing of inert carrier 作者: MEN 時間: 2025-3-27 17:34
W. Xiong,C. R. Cleavelin,T. Schulz,K. Schrüfer,P. Patruno,Jean-Pierre Colingevelopments, in terms of their activities, theirorganization, management and regulation?.· What are the sociotechnical challenges of the proliferation of big data, algorithmic influence and cyber-security challenges in health care, transport, energy production/distribution and production of goods?.Un作者: 誘導(dǎo) 時間: 2025-3-27 21:13
C. A. Colinge,W. Xiong,C. R. Cleavelin,Jean-Pierre Colingeliquids, such as oxygen, nitrogen, hydrogen, and helium, have become commonly used in a number of different applications and are easily available in any part of the United States and, indeed, almost anywhere in the world. Not only are these liquids available, they have become less expensive and also作者: 毛細(xì)血管 時間: 2025-3-28 00:46 作者: Fibrinogen 時間: 2025-3-28 04:30 作者: CROW 時間: 2025-3-28 09:19 作者: 羊齒 時間: 2025-3-28 12:34 作者: Talkative 時間: 2025-3-28 16:05
Valeria Kilchytska,David Levacq,Dimitri Lederer,Guillaume Pailloncy,Jean-Pierre Raskin,Denis Flandree insensitive to pain by medication, and hence they may be exposed to hazards without their awareness and protection by their own reaction. Therefore, medical devices must meet particularly stringent safety req978-3-211-99682-9978-3-211-99683-6作者: 中和 時間: 2025-3-28 19:41
1874-6500 nductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and idea978-1-4020-6379-4978-1-4020-6380-0Series ISSN 1874-6500 Series E-ISSN 1874-6535 作者: 說笑 時間: 2025-3-29 00:41
Steve Hall,O. Buiu,I. Z. Mitrovic,Y. Lu,W. M. Davey作者: 共同確定為確 時間: 2025-3-29 04:25 作者: Metastasis 時間: 2025-3-29 10:05 作者: Compass 時間: 2025-3-29 15:07 作者: cardiac-arrest 時間: 2025-3-29 17:46 作者: 策略 時間: 2025-3-29 21:42
High-κ Dielectric Stacks for Nanoscaled SOI Devices with metal gate to control gate leakage current, can provide a highly scaleable technology to address challenges towards the end of the road map. This paper sets out the basic issues and physics associated with both hi- κ/metal gate and UTB from a device perspective, and establishes the advantages 作者: forthy 時間: 2025-3-30 00:15
Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogs of substrate are therefore needed for further scaling in CMOS microelectronics. We consider here semiconductor heterostructure on insulator (HOI) which are compatible with current silicon planar CMOS technology. Specfically, we investigate effects associated with interface mediated endotaxial (IME作者: 討好女人 時間: 2025-3-30 07:18
Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substratesng fluorine implantation. Vacancy engineering using a silicon implant comprises a high energy silicon implant into an SOI substrate, to separate the excess vacancies in the SOI layer and the excess interstitials below the buried oxide. Results on vacancy-engineering show that a properly optimized hi作者: HEPA-filter 時間: 2025-3-30 11:58
Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETsformance of classical MOSFET structure is becoming seriously degraded. The limits of silicon scaling have been the major challenge for technologists for the past years. With the 90 nm generation in production and despite many roadblocks, the latest International Roadmap for Semiconductors 2005 expec作者: chisel 時間: 2025-3-30 14:29
Integration of silicon Single-Electron Transistors Operating at Room Temperaturennel of MOS transistors has been advanced, and the dot size is now as small as 2 nm. Consequently, the single-electron transistors operate at room temperature and the peak-to-valley current ratio of the Coulomb blockade oscillations reaches as high as 480 at room temperature. The attempts to integra作者: 解脫 時間: 2025-3-30 17:48 作者: Accrue 時間: 2025-3-30 21:56 作者: 箴言 時間: 2025-3-31 03:24
