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標(biāo)題: Titlebook: Nanoscale Transistors; Device Physics, Mode Mark S. Lundstrom,Jing Guo Book 2006 Springer-Verlag US 2006 Nanotube.development.electronics.p [打印本頁(yè)]

作者: incompatible    時(shí)間: 2025-3-21 20:09
書目名稱Nanoscale Transistors影響因子(影響力)




書目名稱Nanoscale Transistors影響因子(影響力)學(xué)科排名




書目名稱Nanoscale Transistors網(wǎng)絡(luò)公開度




書目名稱Nanoscale Transistors網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Nanoscale Transistors被引頻次




書目名稱Nanoscale Transistors被引頻次學(xué)科排名




書目名稱Nanoscale Transistors年度引用




書目名稱Nanoscale Transistors年度引用學(xué)科排名




書目名稱Nanoscale Transistors讀者反饋




書目名稱Nanoscale Transistors讀者反饋學(xué)科排名





作者: CRAMP    時(shí)間: 2025-3-21 23:43
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: extract    時(shí)間: 2025-3-22 02:59
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: Respond    時(shí)間: 2025-3-22 05:53
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: 事與愿違    時(shí)間: 2025-3-22 09:24
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: 傾聽    時(shí)間: 2025-3-22 16:24
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: eczema    時(shí)間: 2025-3-22 18:37

作者: 旁觀者    時(shí)間: 2025-3-22 21:19

作者: PALSY    時(shí)間: 2025-3-23 03:20
storage modes. No burning safety-related issue emerged from the twenty-two papers presented; however, the lack of wet storage space at most reactors and concerns regarding possible sabotage remain as issues that need to be periodically addressed. .978-1-4020-5902-5978-1-4020-5903-2Series ISSN 1871-4668 Series E-ISSN 1871-4692
作者: upstart    時(shí)間: 2025-3-23 06:23

作者: Diastole    時(shí)間: 2025-3-23 11:38
http://image.papertrans.cn/n/image/660958.jpg
作者: exostosis    時(shí)間: 2025-3-23 17:27

作者: 印第安人    時(shí)間: 2025-3-23 21:40

作者: 我不怕犧牲    時(shí)間: 2025-3-23 22:59
Mark S. Lundstrom,Jing GuoPresents most recent developments on theory, modeling and simulation of nanoscale transistors.Provides tools necessary to push traditional electronic debvices to their limits and to develop new device
作者: genesis    時(shí)間: 2025-3-24 03:35
Basic Concepts,densities to the Fermi level, and the notion of directed moments are especially important. Understanding how the eigenstates are populated in a ballistic device and appreciating the difference between semiclassical and quantum treatments are also important. Finally, the idea of a quantum conductance
作者: 開玩笑    時(shí)間: 2025-3-24 08:36
Devices, Circuits, and Systems,ve. We seek a new understanding of small MOSFETs, one that explains the key results for submicron MOSFETs that we have just reviewed, but that also applies all the way to the scaling limit. We also seek an approach that applies to MOSFETs, as well as to the unconventional devices that are being expl
作者: 木訥    時(shí)間: 2025-3-24 13:44
d applied research into spent fuel storage.Wide and unique c.At a NATO-sponsored workshop in Almaty in September 2005, specialists from the IAEA, Brazil, France, Kazakhstan, Poland, Russia, USA and Uzbekistan discussed safety-related issues of storing spent nuclear fuel. Fifteen papers dealt with al
作者: 變量    時(shí)間: 2025-3-24 16:47
d applied research into spent fuel storage.Wide and unique c.At a NATO-sponsored workshop in Almaty in September 2005, specialists from the IAEA, Brazil, France, Kazakhstan, Poland, Russia, USA and Uzbekistan discussed safety-related issues of storing spent nuclear fuel. Fifteen papers dealt with al
作者: Emasculate    時(shí)間: 2025-3-24 22:58
d applied research into spent fuel storage.Wide and unique c.At a NATO-sponsored workshop in Almaty in September 2005, specialists from the IAEA, Brazil, France, Kazakhstan, Poland, Russia, USA and Uzbekistan discussed safety-related issues of storing spent nuclear fuel. Fifteen papers dealt with al
作者: glucagon    時(shí)間: 2025-3-25 00:18

作者: Palpable    時(shí)間: 2025-3-25 06:17

作者: 殖民地    時(shí)間: 2025-3-25 10:38

作者: organism    時(shí)間: 2025-3-25 15:22
d applied research into spent fuel storage.Wide and unique c.At a NATO-sponsored workshop in Almaty in September 2005, specialists from the IAEA, Brazil, France, Kazakhstan, Poland, Russia, USA and Uzbekistan discussed safety-related issues of storing spent nuclear fuel. Fifteen papers dealt with al
作者: 相反放置    時(shí)間: 2025-3-25 18:12
d applied research into spent fuel storage.Wide and unique c.At a NATO-sponsored workshop in Almaty in September 2005, specialists from the IAEA, Brazil, France, Kazakhstan, Poland, Russia, USA and Uzbekistan discussed safety-related issues of storing spent nuclear fuel. Fifteen papers dealt with al
作者: Directed    時(shí)間: 2025-3-25 23:36
lectronic debvices to their limits and to develop new deviceSilicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960‘s, channel lengths were about 10 micro
作者: Infiltrate    時(shí)間: 2025-3-26 00:31

作者: adulterant    時(shí)間: 2025-3-26 07:15

作者: 十字架    時(shí)間: 2025-3-26 09:09

作者: 痛苦一下    時(shí)間: 2025-3-26 14:02
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作者: acetylcholine    時(shí)間: 2025-3-26 20:48
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