標(biāo)題: Titlebook: Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy; Anatoli Korkin,Stephen Goodnick,Robert Nemanich Book 2015 Spr [打印本頁(yè)] 作者: clot-buster 時(shí)間: 2025-3-21 18:07
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy影響因子(影響力)
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy被引頻次
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy被引頻次學(xué)科排名
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy年度引用
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書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy讀者反饋
書(shū)目名稱(chēng)Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy讀者反饋學(xué)科排名
作者: 遺棄 時(shí)間: 2025-3-21 22:58 作者: NOVA 時(shí)間: 2025-3-22 01:33
Ultralow-Power Pseudospintronic Devices via Exciton Condensation in Coupled Two-Dimensional Materia MOSFETs and CMOS logic, are addressed in detail. These pseudospin devices include the voltage-controlled .layer pseudo.pin .ield-.ffect .ransistor (BiSFET) and the current-controlled .layer pseudo.pin .unction .ransistor (BiSJT). MOSFETs are confronted by the intractable physics of thermionic emiss作者: STING 時(shí)間: 2025-3-22 08:30
Graphene-Based Photonics and Plasmonics,re and transmission of graphene-based photonic crystals are considered. The spectra of plasmon and magnetoplasmon excitations in graphene layers and graphene nanoribbons (GNRs) are analyzed. The localization of the electromagnetic waves in the photonic crystals with defects, which play a role of a w作者: 結(jié)果 時(shí)間: 2025-3-22 11:12 作者: gerrymander 時(shí)間: 2025-3-22 13:43
Atomistic Simulations of Electronic and Optical Properties of Semiconductor Nanostructures,rest, self-assembled quantum dots and colloidal nanocrystals, are composed of thousands to millions of atoms, beyond the applicability of ab initio schemes. Our approach, implemented as the QNANO computational package, consists of (1) atomistic geometry optimization using the valence force-field (VF作者: 言行自由 時(shí)間: 2025-3-22 20:42 作者: Water-Brash 時(shí)間: 2025-3-22 23:16
Terahertz Wave Generation Using Graphene and Compound Semiconductor Nano-Heterostructures,-dimensional (2D) plasmons in high-electron mobility transistors (HEMTs) and related semiconductor nano-heterostructures has been used for emission of THz electromagnetic radiation. Plasmons in graphene (which is one or several monolayers of a honeycomb carbon lattice) have a higher velocity and pec作者: Hemoptysis 時(shí)間: 2025-3-23 03:51
Optics of Hybrid Nanomaterials in the Strong Coupling Regime,oscopic oscillators is thoroughly discussed in the context of two-level quantum emitters and either surface plasmon polaritons or microcavities. A picture of upper and lower polariton definition in terms of coherent and incoherent states is described. Recent developments that we address include seve作者: Blood-Vessels 時(shí)間: 2025-3-23 09:06 作者: 模范 時(shí)間: 2025-3-23 11:06 作者: 圣歌 時(shí)間: 2025-3-23 17:56
Anatoli Korkin,Stephen Goodnick,Robert NemanichProvides an authoritative overview of the current status and future trends of nanoelectronics, photonics, and solar energy.Presents broad-ranging tutorials on both theoretical and experimental aspects作者: Atheroma 時(shí)間: 2025-3-23 19:37 作者: 使高興 時(shí)間: 2025-3-24 00:51
Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy978-3-319-18633-7Series ISSN 1571-5744 Series E-ISSN 2197-7976 作者: 陪審團(tuán)每個(gè)人 時(shí)間: 2025-3-24 05:36
Book 2015Progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions; new materials are being introduced into electronics manufa作者: 責(zé)問(wèn) 時(shí)間: 2025-3-24 08:32 作者: 枕墊 時(shí)間: 2025-3-24 14:35
Optics of Hybrid Nanomaterials in the Strong Coupling Regime,upling, use of plasmonic structures to introduce directionality to otherwise isotropic emission from quantum dots, and mapping Rabi oscillations by probing a hybrid system at progressively later times during pumping. Throughout the review, the importance of computational methods in modeling nanoscale systems is made very evident.作者: 商談 時(shí)間: 2025-3-24 18:02 作者: 繁榮地區(qū) 時(shí)間: 2025-3-24 22:30 作者: VALID 時(shí)間: 2025-3-25 00:01
Atomistic Simulations of Electronic and Optical Properties of Semiconductor Nanostructures,on interaction approach coupled with Fermi’s Golden Rule. We illustrate this methodology by computing the single-particle states and the exciton fine structure of a self-assembled quantum dot, and by analyzing the multiexciton generation processes in colloidal nanocrystals.作者: CLAP 時(shí)間: 2025-3-25 04:55
Terahertz Wave Generation Using Graphene and Compound Semiconductor Nano-Heterostructures,nisms and experimental results are demonstrated including coherent monochromatic THz radiation from InP-based HEMT-type emitters and stimulated emission of THz radiation with a giant gain via excitation of surface plasmon polaritons in optically pumped monolayer intrinsic graphene.作者: STING 時(shí)間: 2025-3-25 10:42
llte Sachlichkeit Grund zu legen für eine Theorie der Gesellschaft, insbesondere des Politischen in ihr. Nicht wenige der hier ver?ffentlichten Beitr?ge sind dieser Problematik verpflichtet und lassen darin den Einflu? der Plessnerschen Arbeiten erkennen.作者: SPASM 時(shí)間: 2025-3-25 12:13
1571-5744 scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectro978-3-319-37118-4978-3-319-18633-7Series ISSN 1571-5744 Series E-ISSN 2197-7976 作者: OASIS 時(shí)間: 2025-3-25 17:56 作者: expound 時(shí)間: 2025-3-25 22:50 作者: 包租車(chē)船 時(shí)間: 2025-3-26 01:28
Dominic F. Gervasio,Hassan Elsentriecy,Luis Phillipi da Silva,A. M. Kannan,Xinhai Xu,K. Vignarooban作者: PANEL 時(shí)間: 2025-3-26 06:59 作者: APNEA 時(shí)間: 2025-3-26 11:15
Ultralow-Power Device Operation,re a decrease of device capacitance . (device integration) and applied bias ., together with a decrease of leakage currents of nanodevices..The best potential solutions are ultrathin-film SOI (silicon-on-insulator) and multi-gate devices, nanowires, and small-slope switches (tunnel FETs, ferroelectr作者: DENT 時(shí)間: 2025-3-26 13:11 作者: 審問(wèn) 時(shí)間: 2025-3-26 19:12 作者: 強(qiáng)行引入 時(shí)間: 2025-3-26 23:09
Book 2015ics, Photonics and Solar Energy. features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectro作者: microscopic 時(shí)間: 2025-3-27 03:21 作者: 音樂(lè)等 時(shí)間: 2025-3-27 07:45 作者: 甜食 時(shí)間: 2025-3-27 13:05
Defect Formation and Reduction During Bulk SiC Growthon achieving an understanding of the defect formation processes during SiC bulk crystal growth. This paper aims to describe the current understanding of defect formation during SiC bulk crystal growth, and it also tries to provide strategies to reduce the crystallographic defects in SiC bulk crystals.作者: 殺人 時(shí)間: 2025-3-27 17:34
Dictionary of Civil Engineeringence of Guenevere. William Fulford influenced his fellow contributors through his critical zeal for Tennyson and commitment to women‘s rights; his poem “To the English Army Before Sebastopol” celebrates an ethical militance latent in the imagery of his fellow OCM poets. The OCM‘s sole female contrib作者: AMPLE 時(shí)間: 2025-3-27 20:49 作者: 我不死扛 時(shí)間: 2025-3-28 00:35
Fetal MRI of Normal Brain Development,ed during vulnerable periods by different pathological processes, and how genetically controlled events in development correlate with functional development. The maturational stages of the fetal cerebral cortex, white matter, temporal lobe, and cerebellum, including structures that appear transientl作者: figment 時(shí)間: 2025-3-28 05:03 作者: Minutes 時(shí)間: 2025-3-28 07:20
Contemporary Approaches in the Philosophy of Human Rights,en human rights and their foundations as well as from the point of view of taking into consideration the discoveries of natural sciences. It turns out that the relation between human rights and their foundations is either flawed, weak or unclear. Similarly, there are almost no references to the rapi作者: HARP 時(shí)間: 2025-3-28 12:17 作者: 創(chuàng)新 時(shí)間: 2025-3-28 15:46
tly, we are obliged to take note of a fundamental ambiguity introduced into Freud’s theory from the start, when he recognized both that symptoms are structured like a language — in the sense that they are . comprehensible when ‘read’ as a concealed and distorted expression of thought, whose translat
