標(biāo)題: Titlebook: Nanophenomena at Surfaces; Fundamentals of Exot Michail Michailov Book 2011 Springer-Verlag Berlin Heidelberg 2011 Low dimensional systems. [打印本頁(yè)] 作者: Strategy 時(shí)間: 2025-3-21 20:07
書(shū)目名稱Nanophenomena at Surfaces影響因子(影響力)
書(shū)目名稱Nanophenomena at Surfaces影響因子(影響力)學(xué)科排名
書(shū)目名稱Nanophenomena at Surfaces網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Nanophenomena at Surfaces網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Nanophenomena at Surfaces被引頻次
書(shū)目名稱Nanophenomena at Surfaces被引頻次學(xué)科排名
書(shū)目名稱Nanophenomena at Surfaces年度引用
書(shū)目名稱Nanophenomena at Surfaces年度引用學(xué)科排名
書(shū)目名稱Nanophenomena at Surfaces讀者反饋
書(shū)目名稱Nanophenomena at Surfaces讀者反饋學(xué)科排名
作者: 縱火 時(shí)間: 2025-3-21 21:09
K. Binder,Y.H. Chui,P. Nielaba,A. Ricci,S. Senguptaped. Several mutually non-equivalent theories have been proposed for it, none of which, however, has been accepted by the majority of mathematicians or computer scientists. In this contribution one of these theories, TTE (Type 2 Theorie of Effectivity), is presented, which at least in the author‘s o作者: Peculate 時(shí)間: 2025-3-22 00:35 作者: sebaceous-gland 時(shí)間: 2025-3-22 06:34 作者: 確定方向 時(shí)間: 2025-3-22 12:25 作者: 欺騙世家 時(shí)間: 2025-3-22 14:31
R. Yongsunthon,C. Tao,P. Rous,E.D. Williams born as a local Czechoslovak event 25 years ago SOFSEM did not miss the opportunity oe red in 1989 by the newly found freedom in our part of Europe and has evolved into a full-?edged international conference. For all the changes, however, it has kept its generalist and mul- disciplinarycharacter.Th作者: 寒冷 時(shí)間: 2025-3-22 20:26
M. Michailovpraktisch aber ist sie meist ein Minderheitenprogramm, das Wissen über visuelles Vokabular für eine m?gliche Einordnung voraussetzt. Besonders die Art, wie mittels Kunst Erz?hlungen generiert werden, unterscheidet sich vom Funktionieren anderer Erz?hlungen. Transponierleistungen vom Visuellen in den作者: exhibit 時(shí)間: 2025-3-23 01:14 作者: Assault 時(shí)間: 2025-3-23 01:22 作者: inveigh 時(shí)間: 2025-3-23 09:02
H. Pfnürcal limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood...SOI Circuit Design Concept作者: 熔巖 時(shí)間: 2025-3-23 13:27 作者: bypass 時(shí)間: 2025-3-23 15:14
S.S. Kosolobov,A.V. Latyshevtage, low-power and high-speed digital systems.SOI hasalso proved to be effective in various niche and growing markets.ICprocesses based on SOI are known to reduce susceptibility toradiation, and have been used for many years in high radiationenvironments.SOI is also used for power integrated circui作者: 浮雕寶石 時(shí)間: 2025-3-23 19:27 作者: miscreant 時(shí)間: 2025-3-23 23:58 作者: 高談闊論 時(shí)間: 2025-3-24 02:20 作者: Nonthreatening 時(shí)間: 2025-3-24 08:57 作者: 不能妥協(xié) 時(shí)間: 2025-3-24 13:51 作者: MAIM 時(shí)間: 2025-3-24 17:15 作者: Cosmopolitan 時(shí)間: 2025-3-24 21:06 作者: indemnify 時(shí)間: 2025-3-25 00:53
Classification Order of Surface-Confined Intermixing at Epitaxial Interface,ical problem of competing, long-range and short-range atomic interactions in systems with reduced dimensionality, these phenomena have found exacting academic interest. They are also of great technological importance for their ability to bring spontaneous formation of regular nanoscale surface patte作者: Budget 時(shí)間: 2025-3-25 05:48 作者: 現(xiàn)任者 時(shí)間: 2025-3-25 09:34 作者: Confess 時(shí)間: 2025-3-25 12:49
Metallic Nanowires on the Atomic Scale: Correlation Between Structure, Electronic Properties, and Erated by metal adsorption of sub-monolayers on insulating substrates like Si(111) or Si(557). The unavoidable coupling to 2D and 3D for all these cases results in a wealth of new phenomena. Here we concentrate on the Pb/Si(557) system, where these couplings in 2D and 3D become very obvious, and disc作者: –吃 時(shí)間: 2025-3-25 19:07 作者: Ascribe 時(shí)間: 2025-3-25 20:57
Step Bunching on Silicon Surface Under Electromigration,mple heating by direct electric current are reviewed. The kinetic instability of the diffusion-linked atomic steps affected by electromigration of adsorbed atoms on atomically clean and gold-deposited silicon (111) surface is studied in temperature range between 850 and 1350.C. Consequent changes of作者: 你敢命令 時(shí)間: 2025-3-26 03:14
,Step-Bunching Instabilities of Vicinal Surfaces During Growth and Sublimation of Crystals – the Rol . of the electric current through it. This phenomenon opens an easy way to manipulate the surface structure and to create a template for production of ordered arrays of nano-crystals on Si surface. The BCF model is generalized to account for the surface electromigration and the considerations are f作者: meretricious 時(shí)間: 2025-3-26 06:57 作者: 慢慢流出 時(shí)間: 2025-3-26 09:24 作者: 反抗者 時(shí)間: 2025-3-26 12:52
Michail MichailovCovers a large variety of nanophenomena at surfaces of different classes of materials.Integrates surface physics, nanosciences, material sciences, chemical physics, biological physics and crystallogra作者: characteristic 時(shí)間: 2025-3-26 19:50
Springer Series in Surface Scienceshttp://image.papertrans.cn/n/image/660891.jpg作者: Meander 時(shí)間: 2025-3-26 23:24
https://doi.org/10.1007/978-3-642-16510-8Low dimensional systems; Monolayers and thin films growth; Nanostructures on surfaces; Surfaces and int作者: 貴族 時(shí)間: 2025-3-27 04:44 作者: Aerate 時(shí)間: 2025-3-27 07:50 作者: 彎彎曲曲 時(shí)間: 2025-3-27 10:37
Formation and Opto-electronic Properties of Nanostructures on Ultrathin SiO2-Covered Si Surfaces, quantum confinement effects and intense luminescence in the energy region of about 0.8?eV. We also report an application result to grow GaSb thin films on Si substrates covered with ultrathin SiO. films using GaSb nanodots as seeding crystals.作者: 身體萌芽 時(shí)間: 2025-3-27 14:55
Book 2011ical background of exotic condensed-matter properties.The book is devoted to Iwan Stranski and Rostislaw Kaischew, remarkable scientists, who played a crucial role in setting up the theoretical fundamentals of nucleation and crystal growth phenomena in the last century.作者: Vital-Signs 時(shí)間: 2025-3-27 19:20 作者: Axon895 時(shí)間: 2025-3-28 01:15
Step Bunching on Silicon Surface Under Electromigration,p bunches and vice versa. Peculiarities of the atomic mechanism of the such morphological transitions observed on atomically clean and gold-deposited silicon surface at enhanced temperatures are discussed.作者: 文件夾 時(shí)間: 2025-3-28 04:43
0931-5195 ences, chemical physics, biological physics and crystallograThis book presents the state of the art in nanoscale surface physics. It outlines contemporary trends in the field covering a wide range of topical areas: atomic structure of surfaces and interfaces, molecular films and polymer adsorption, 作者: NIB 時(shí)間: 2025-3-28 08:40
Book 2011eas: atomic structure of surfaces and interfaces, molecular films and polymer adsorption, biologically inspired nanophysics, surface design and pattern formation, and computer modeling of interfacial phenomena. Bridging "classical" and "nano" concepts, the present volume brings attention to the phys作者: 惡心 時(shí)間: 2025-3-28 11:02
0931-5195 and Rostislaw Kaischew, remarkable scientists, who played a crucial role in setting up the theoretical fundamentals of nucleation and crystal growth phenomena in the last century.978-3-642-26723-9978-3-642-16510-8Series ISSN 0931-5195 Series E-ISSN 2198-4743 作者: 窗簾等 時(shí)間: 2025-3-28 16:07 作者: Urologist 時(shí)間: 2025-3-28 21:24 作者: MAL 時(shí)間: 2025-3-28 23:33 作者: APEX 時(shí)間: 2025-3-29 05:06 作者: 受傷 時(shí)間: 2025-3-29 07:27
Y. Jia,M.M. ?zer,H.H. Weitering,Z. Zhangrcially available command-and-control, and traffic management systems. Experience confirms that due to the resulting very high degree of modularity and maximal independence between modules, these systems are relatively easy to develop and integrate in an incremental way. Moreover, distribution of pr作者: 單色 時(shí)間: 2025-3-29 15:19 作者: 熒光 時(shí)間: 2025-3-29 15:40 作者: Occipital-Lobe 時(shí)間: 2025-3-29 22:40
M. Ichikawaew approaches are described as well...SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new tech作者: inhibit 時(shí)間: 2025-3-30 03:29 作者: Working-Memory 時(shí)間: 2025-3-30 04:41
S. Stoyanovnning to attain a level of parity, withcircuits that are in some cases improved over their bulk counterparts.SOI is suitable for digital, memory and analog designs, although it isnot necessarily straightforward to convert circuits developed for bulkprocesses into SOI. .Memory and most analog circuits either i978-1-4757-7562-4978-0-306-48161-1作者: 免費(fèi) 時(shí)間: 2025-3-30 11:23
