標(biāo)題: Titlebook: Nanoelectronic Materials and Devices; Select Proceedings o Christophe Labbé,Subhananda Chakrabarti,B. Bindu Conference proceedings 2018 Spr [打印本頁] 作者: 使作嘔 時間: 2025-3-21 19:24
書目名稱Nanoelectronic Materials and Devices影響因子(影響力)
書目名稱Nanoelectronic Materials and Devices影響因子(影響力)學(xué)科排名
書目名稱Nanoelectronic Materials and Devices網(wǎng)絡(luò)公開度
書目名稱Nanoelectronic Materials and Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Nanoelectronic Materials and Devices被引頻次
書目名稱Nanoelectronic Materials and Devices被引頻次學(xué)科排名
書目名稱Nanoelectronic Materials and Devices年度引用
書目名稱Nanoelectronic Materials and Devices年度引用學(xué)科排名
書目名稱Nanoelectronic Materials and Devices讀者反饋
書目名稱Nanoelectronic Materials and Devices讀者反饋學(xué)科排名
作者: COST 時間: 2025-3-21 20:24
Amrit Mallick,Punyapriya Mishra,Sarat Kumar Swain as status offenders. Status offenses are non-criminal behaviors that are treated as violations only because the offender is a minor. Classifying juvenile behavior as status offenses is designed to restrict the youth’s behavior in order to promote their safety and health. States may classify runaway作者: mechanical 時間: 2025-3-22 04:18
The Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites,hapter proposes a novel sequential approach of fabrication and testing for mechanical strength and electrical conductivity of the multiwall carbon nanotubes (MWCNT) reinforced PMMA composite by extrusion technique along with their morphological analysis by field emission scanning electron microscope作者: Vulnerary 時間: 2025-3-22 07:34 作者: 光亮 時間: 2025-3-22 11:18 作者: Arresting 時間: 2025-3-22 16:51 作者: GLOOM 時間: 2025-3-22 19:54 作者: 愛國者 時間: 2025-3-23 01:11
Memristor-Based Approximate Adders for Error Resilient Applications,roughput of the system by limiting the speed of memory access and bandwidth. This profound memory wall problem can be overcome by using memristor-based Computation-In-Memory (Memory-driven) architecture that can be simultaneously utilized as memory and processing element. To further enhance the comp作者: 有惡意 時間: 2025-3-23 02:05
Integrated MEMS Capacitive Pressure Sensor with On-Chip CDC for a Wide Operating Temperature Range, with good performance. These are capable of observing the temporal effects of the environment and to calibrate the values in order to provide information regarding the physical parameters by studying the deflection of the diaphragm structure. This paper presents a new model of capacitive pressure s作者: 存心 時間: 2025-3-23 08:28
,A High SNDR and Wider Signal Bandwidth CT Σ? Modulator with a Single Loop Nonlinear Feedback Compen pole of RC elements that affect the modulator loop stability. The compensated Gm-C filter provides better stability and less complexity. Moreover, the high input impedance of Gm-C employed in modulator eliminates the strong linear driving stage, because it uses NMOS as Gm1 input stage. A single loo作者: reaching 時間: 2025-3-23 10:27
Design of Current-Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect,es current-mode signal transmission between devices and interconnects in on-chip. In proposed transceiver, the transmitter architecture drives the interconnect with less load, and the receiver section offers low impedance channel termination which results speedy operation with low power dissipation.作者: 細絲 時間: 2025-3-23 15:47 作者: gratify 時間: 2025-3-23 19:06
Enhancement of Transconductance Using Multi-Recycle Folded Cascode Amplifier, of the analog and mixed-signal device. It is fundamental block of the many design circuit that utilizes high gain, high bandwidth, fast settling time. Op-amp is one of the basic building blocks of analog circuit which has wide range of application such as biomedical application, ADC converter, swit作者: bourgeois 時間: 2025-3-24 01:36
Nondestructive Read Circuit for Memristor-Based Memories,nd stores the binary data in the form of resistance. Its compatibility with the existing CMOS memory peripherals makes it interesting in the field of memory design. High density memories are realizable with the use of multilevel crossbar array of memristors. To write data into the memristor are as s作者: 聲音刺耳 時間: 2025-3-24 03:11
A Built-in Self-Repair Architecture for Random Access Memories, to detect the faults in memories, and built-in self-repair (BISR) technique has been widely used to repair the memories. This paper discusses the configurable BISR (CBISR) technique for repairing random access memories with variable sizes and redundancy structures. An effective redundancy analysis 作者: 信徒 時間: 2025-3-24 07:06 作者: ERUPT 時間: 2025-3-24 11:07 作者: follicular-unit 時間: 2025-3-24 15:35 作者: 侵略主義 時間: 2025-3-24 19:03
Memristor Equipped Error Detection Technique, off. Memristor devices can also retain its behavior in logic design. Digital data transmission has made today’s world more efficient for data communication. The paper emphasizes on the implementation of one of the error detection technique using memristor. ./.: To procure better simulation result o作者: Adulterate 時間: 2025-3-25 02:03 作者: 來這真柔軟 時間: 2025-3-25 07:12
Design and Verification of Memory Controller with Host Wishbone Interface, digital circuit which manages the flow of data to and fro from the processor to the memory. Instead of processor handling all the read and write operations into the memory, it allocates its work to memory controller so that processor can do some other work during the same time. This in turn leads t作者: Proclaim 時間: 2025-3-25 10:42
High Performance Trench Gate Power MOSFET of Indium Phosphide,e-based trench MOSFET shows 36% improvement in breakdown voltage, 75% reduction in ON resistance and 400% improvement in peak transconductance as compared to the equivalent Si trench MOSFET of ~50?V class.作者: 軌道 時間: 2025-3-25 15:30
,28?nm FD-SOI SRAM Design Using Read Stable Bit Cell Architecture,ime and read stability as compared to the conventional 6T SRAM. Write 1 operation achieves a rise of 16%, while write 0 and read 1 are better than 6T by 70 and 90%, respectively. The design was implemented on 28?nm FD-SOI platform. .: The proposed design has the better read stability as compared to the conventional 6T SRAM bit cell design.作者: 進取心 時間: 2025-3-25 19:36
Design and Verification of Memory Controller with Host Wishbone Interface,mic random access memory (SDRAM), and synchronous chip select device. It also deals with the verification and functional coverage of the controller. The design part has been done using Xilinx ISE tool, and the verification part has been done using Mentor Graphics Questa Sim 10.0b.作者: 敘述 時間: 2025-3-25 20:08 作者: 小爭吵 時間: 2025-3-26 03:27
Conference proceedings 2018actitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.??.作者: 蟄伏 時間: 2025-3-26 05:26 作者: multiply 時間: 2025-3-26 09:33
Design of Current-Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect, metal oxide semiconductor field-effect transistor counterpart. Simulation results justify that the proposed transceiver exhibits lesser delay by the factor of 1000 and 100 times lower power dissipation compared to metal oxide semiconductor field-effect transistor-based transceiver.作者: evince 時間: 2025-3-26 15:18 作者: COKE 時間: 2025-3-26 20:39
,A Current-Mode DC–DC Boost Converter with Fast Transient and On-Chip Current-Sensing Technique,quency with output ripple voltage of 21?mV by using 4.7?μF off-chip capacitor and 55?μH off-chip inductor. .: Design of converter in current-mode control with high accurate current-sensing technique increases the controllability on PWM signal. Modified OTA design helps in the fast settling of the converter.作者: 安撫 時間: 2025-3-26 22:25 作者: 畢業(yè)典禮 時間: 2025-3-27 02:30 作者: 熱烈的歡迎 時間: 2025-3-27 07:10
1876-1100 nic materials and devices.Includes contributions by top rese.This book gathers a collection of papers by international experts that were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electroni作者: 圓桶 時間: 2025-3-27 10:22 作者: 史前 時間: 2025-3-27 14:32 作者: textile 時間: 2025-3-27 18:40 作者: Hearten 時間: 2025-3-28 00:16 作者: calorie 時間: 2025-3-28 03:36
Apoorva Amdapurkar,Dinesh Wani,Pooja Shinde,P. Reena Monica作者: 即席演說 時間: 2025-3-28 06:44 作者: Statins 時間: 2025-3-28 13:58 作者: 總 時間: 2025-3-28 17:16
A. Lourts Deepak,Mrinal Gandotra,Shailja Yadav,Himani Gandhi,S. Umadevi作者: 有機體 時間: 2025-3-28 21:34
1876-1100 , nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.??.978-981-13-5602-5978-981-10-7191-1Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: Hla461 時間: 2025-3-29 02:34
The Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites,ad, and impact strength were measured, and their improved magnitudes reaffirmed effective dispersion of f-MWCNTs in matrix. Composites replacing the conventional engineering materials in electronic devices should have better electrical conductivity for various applications. Hence, the conductance of作者: 切割 時間: 2025-3-29 05:26
Films of Reduced Graphene Oxide-Based Metal Oxide Nanoparticles,) and supercapacitors are demonstrated. The higher photodegradation rates provided by the metal oxide-rGO hybrids enable regeneration of the used SERS substrate while the contribution from electric double layer capacitance of rGO and pseudocapacitance due to metal oxide enhances the charge storage i作者: 運動性 時間: 2025-3-29 10:03 作者: magenta 時間: 2025-3-29 14:45
Integrated MEMS Capacitive Pressure Sensor with On-Chip CDC for a Wide Operating Temperature Range,o divert the entire stress to the center of the diaphragm. The circuit presented over here uses a sigma–delta technique to convert the input capacitance into digital form. A constant-.. biasing technique is used for high-temperature performance. The entire structure of the sensor is modeled in COMSO作者: 展覽 時間: 2025-3-29 19:17
Weak Cell Detection Techniques for Memristor-Based Memories,s state. Most of the design for testability (DFT) techniques employ the deterministic test patterns algorithm like March tests. Though March tests are very effective for the conventional memories, they are not so effective in case of memristor-based memories. Stability faults such as the undefined s作者: Frisky 時間: 2025-3-29 23:28 作者: foliage 時間: 2025-3-30 03:06
Nondestructive Read Circuit for Memristor-Based Memories,the circuit more stable and nondestructive read operation. .: As the proposed circuit reads the content of the memristor memory without disturbing the content of the cell, it avoids refreshing or restoration of the memristor content after each read operation. By that, it improves the speed of the me作者: 租約 時間: 2025-3-30 04:27
A Modified GDI-Based Low-Power and High Read Stability 8-T SRAM Memory with CNTFET Technology,rformed for the SRAM cell. .: m-GDI technique solves the problem of voltage degradation in GDI technique. An 8-T SRAM cell with low power and high read stability is implemented. CNTs with chirality vector (13, 0) are found to be a good choice for low-power and stable SRAM cell. .: CNTFET with m-GDI-作者: 真實的人 時間: 2025-3-30 11:13 作者: Orchiectomy 時間: 2025-3-30 14:54 作者: Proponent 時間: 2025-3-30 16:47
https://doi.org/10.1007/978-981-10-7191-1Functional Electronic Nanomaterials; Nanoelectronic materials for Energy application; Nanoelectronic D作者: GRACE 時間: 2025-3-30 23:04
978-981-13-5602-5Springer Nature Singapore Pte Ltd. 2018作者: confide 時間: 2025-3-31 02:01 作者: Substance 時間: 2025-3-31 05:36 作者: Pageant 時間: 2025-3-31 12:47
Christophe Labbé,Subhananda Chakrabarti,B. BinduCovers key developments in the field of electronics and communication engineering.Presents the latest research from the field of nanoelectronic materials and devices.Includes contributions by top rese作者: 甜瓜 時間: 2025-3-31 13:42
Bursting in Separating Flow and in Transition,ions; a finite-time break-up possible in any unsteady interactive boundary layer; and the absence of large-scale separation in turbulent flow. The aerodynamic implications for stall, intermittency, transition and turbulence effects are also emphasized.
