標(biāo)題: Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V [打印本頁(yè)] 作者: gloomy 時(shí)間: 2025-3-21 16:38
書目名稱Microscopy of Semiconducting Materials影響因子(影響力)
書目名稱Microscopy of Semiconducting Materials影響因子(影響力)學(xué)科排名
書目名稱Microscopy of Semiconducting Materials網(wǎng)絡(luò)公開度
書目名稱Microscopy of Semiconducting Materials網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Microscopy of Semiconducting Materials被引頻次
書目名稱Microscopy of Semiconducting Materials被引頻次學(xué)科排名
書目名稱Microscopy of Semiconducting Materials年度引用
書目名稱Microscopy of Semiconducting Materials年度引用學(xué)科排名
書目名稱Microscopy of Semiconducting Materials讀者反饋
書目名稱Microscopy of Semiconducting Materials讀者反饋學(xué)科排名
作者: STALL 時(shí)間: 2025-3-21 22:04 作者: 愉快么 時(shí)間: 2025-3-22 02:19 作者: 祖?zhèn)髫?cái)產(chǎn) 時(shí)間: 2025-3-22 07:53 作者: 恭維 時(shí)間: 2025-3-22 11:57 作者: 致命 時(shí)間: 2025-3-22 16:29
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesity and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further i作者: PRE 時(shí)間: 2025-3-22 18:23 作者: cultivated 時(shí)間: 2025-3-22 21:42
In GaN-GaN quantum wells: their luminescent and nano-structural propertiesectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30?. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existen作者: ARC 時(shí)間: 2025-3-23 03:06 作者: 心痛 時(shí)間: 2025-3-23 08:16 作者: Pander 時(shí)間: 2025-3-23 12:05
Oxygen segregation to nanopipes in gallium nitridelectron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative a作者: 低三下四之人 時(shí)間: 2025-3-23 14:22 作者: 方便 時(shí)間: 2025-3-23 19:47 作者: FLAG 時(shí)間: 2025-3-23 23:01 作者: CLASP 時(shí)間: 2025-3-24 04:29 作者: Coma704 時(shí)間: 2025-3-24 09:41 作者: Apogee 時(shí)間: 2025-3-24 14:11 作者: Anticonvulsants 時(shí)間: 2025-3-24 15:52 作者: 無(wú)政府主義者 時(shí)間: 2025-3-24 21:21
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emittsmission electron microscopy. These layers consisted of multiple stacks of GaN layers in conjunction with a superlattice of alternate layers of AlN and GaN or — in order to reduce tensile strain — a superlattice of AlN and In.Ga.N with x = 0.25. The AlN/GaN-based superlattice showed cracks and a hig作者: commute 時(shí)間: 2025-3-25 02:40
Characterization of defects in ZnS and GaNctures, making it potentially useful as a nanoscale component in electronic devices. Since the properties of nanoscale materials typically differ from those of their bulk counterparts, a fundamental understanding of the structure of the ZnS nanostructures is essential, particularly since they contai作者: COMMA 時(shí)間: 2025-3-25 05:24 作者: 光亮 時(shí)間: 2025-3-25 07:47 作者: thyroid-hormone 時(shí)間: 2025-3-25 14:59
J S Barnard,D M Graham,T M Smeeton,M J Kappers,P Dawson,M Godfrey,C J Humphreysases) have been named based on an original suggestion by Smith and Nathans (3). They proposed that the enzyme names should begin with a three-letter acronym in which the first letter was the first letter of the genus from which the enzyme was isolated and the next two letters were the first two lett作者: 手段 時(shí)間: 2025-3-25 17:02 作者: 令人發(fā)膩 時(shí)間: 2025-3-25 22:46
S Mahajanrentiation, and cellular response to various stimuli, and also pathological changes that arise in diseases. Classically, two hybridization methods, differential and subtractive hybridization, have been used to analyze and isolate such genes [1–3]. However, differential hybridization is effective onl作者: 首創(chuàng)精神 時(shí)間: 2025-3-26 03:00
M Hawkridge,D Chernsrentiation, and cellular response to various stimuli, and also pathological changes that arise in diseases. Classically, two hybridization methods, differential and subtractive hybridization, have been used to analyze and isolate such genes [1–3]. However, differential hybridization is effective onl作者: harmony 時(shí)間: 2025-3-26 06:52
P Vennéguès,J M Bethoux,Z Bougrioua,M Azize,P De Mierry,O Tottereau differ from markets offline and why established classical economic theory and models might need to be revised and adapted to the novelties related to digitisation and a digital economy. Whether or not markets function similarly or not is crucial in particular for the context analysis necessary for 作者: 彎曲道理 時(shí)間: 2025-3-26 11:21
P D Cherns,C McAleese,M J Kappers,C J Humphreys01 TFEU or prima facie abusive practices treated according to the form-based approach under Article 102 TFEU. Although extensive research has been conducted on the notion of object infringements of competition, there is no systematic review of this topic covering both competition provisions, namely 作者: 一起 時(shí)間: 2025-3-26 16:07 作者: Transfusion 時(shí)間: 2025-3-26 20:41
R T Murray,P J Parbrook,G Hill,I M Ross of eco- nomics, for over two decades now. 1 Between the late 1950s and the current time, as Chapter 2 attempts to show, the emphasis seems to have shifted from purely economic considerations of underdevelopment to a paradigm that includes other, extra-economic considerations of a social, political,作者: coddle 時(shí)間: 2025-3-27 00:04 作者: 要素 時(shí)間: 2025-3-27 01:46
A Delimitis,Ph Komninou,Th Kehagias,Th Karakostas,E Dimakis,A Georgakilas,G Nouet auch theoretisch weiterführende Erkenntnisse über Chancen und Grenzen politischer Steuerung liefern kann. Ausgangspunkt dabei war die These, dass politische Steuerung aufgrund der funktionalen Differenzierung der Gesellschaft in zahlreiche autonome Teilsysteme mit je spezifischen Eigenlogiken zuneh作者: colloquial 時(shí)間: 2025-3-27 08:58
S Saravanan,E G Keim,G J M Krijnen,M Elwenspoek German Annual for Spatial Research and Policy. Four of these institutes belong to the Leibniz Association: The Academy for Spatial Research and Planning (ARL) in Hannover, the Leibniz Institute for Regional Geography (IfL) in Leipzig, the Leibniz Institute of Ecological and Regional Development (I?作者: 抑制 時(shí)間: 2025-3-27 09:55
R Kr?ger,C Kruse,J Dennemarck,D Hommel,A RosenauerGermany and Central and Eastern Europe.Includes supplementarPreface – Introduction 1 Sebastian Lentz With “Restructuring Eastern Germany” ? ve spatial research institutes have - troduced the ? rst volume of the German Annual for Spatial Research and Policy. Four of these institutes belong to the Lei作者: lactic 時(shí)間: 2025-3-27 16:34
J Deneen,S Kumar,C R Perrey,C B Carter German Annual for Spatial Research and Policy. Four of these institutes belong to the Leibniz Association: The Academy for Spatial Research and Planning (ARL) in Hannover, the Leibniz Institute for Regional Geography (IfL) in Leipzig, the Leibniz Institute of Ecological and Regional Development (I?作者: 雕鏤 時(shí)間: 2025-3-27 20:41
In GaN-GaN quantum wells: their luminescent and nano-structural propertiesce of apparent well width fluctuations in the MQW sample with suggestions of indium fluctuations as well. In the single quantum well, we find a reasonably homogeneous well with no obvious signs of clustering or well width fluctuations.作者: 要素 時(shí)間: 2025-3-27 23:22 作者: 呼吸 時(shí)間: 2025-3-28 02:06 作者: ethereal 時(shí)間: 2025-3-28 08:43 作者: ACRID 時(shí)間: 2025-3-28 10:30 作者: 矛盾心理 時(shí)間: 2025-3-28 15:27
Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasmaieved by using high In/N flux ratios. Compact films generally exhibit higher in-plane lattice constant values than columnar ones and, consequently, higher densities of InN/GaN interfacial misfit dislocations.作者: 先行 時(shí)間: 2025-3-28 18:45
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitth interface roughness whereas smooth layers without cracks could be found for the structure containing the AlN/In.Ga.N superlattice. The In.Ga.N layers were homogeneous, although indications for In-segregation could be observed. Mesas of these structures were prepared by the focused ion-beam technique.作者: exceed 時(shí)間: 2025-3-29 00:12
Characterization of defects in ZnS and GaNn significant numbers of planar defects. Commercial samples of GaN also contain large numbers of planar defects which are not well understood. The present study will discuss similar defects in the two materials.作者: TERRA 時(shí)間: 2025-3-29 05:05 作者: 創(chuàng)新 時(shí)間: 2025-3-29 08:26 作者: Flustered 時(shí)間: 2025-3-29 11:27
the Institute of Physics, London and the Materials Research Society, USA. The 14.th. conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy.作者: 時(shí)間等 時(shí)間: 2025-3-29 18:24
probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume..978-3-642-06870-6978-3-540-31915-3作者: 中止 時(shí)間: 2025-3-29 22:38 作者: 容易做 時(shí)間: 2025-3-30 03:28 作者: Hectic 時(shí)間: 2025-3-30 06:00
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesut unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.作者: 接合 時(shí)間: 2025-3-30 08:21
First stage of nucleation of GaN on (0001) sapphirege growth gives rise to islands which are randomly rotated and relaxed with misfit dislocations. The islands that start to coalesce from 60s growth time keep this random orientation and this leads to the bending of 60° misfit dislocations in the interface plane to form .-type TDs inside low angle boundaries.作者: 流逝 時(shí)間: 2025-3-30 13:14 作者: 過(guò)時(shí) 時(shí)間: 2025-3-30 17:33
Strain relaxation in (Al,Ga)N/GaN heterostructures≤70%), the second relaxation step is cracking. When cracked, relaxation of the films occurs by the introduction of long and straight .-type dislocations and small bowed .-type dislocation half-loops bordering the cracks. These two relaxing features lead for Al.Ga.N films above 2μm thick to full relaxation.作者: Trigger-Point 時(shí)間: 2025-3-30 21:24 作者: 言行自由 時(shí)間: 2025-3-31 02:00 作者: Osmosis 時(shí)間: 2025-3-31 07:55
B Daudin,J -L Rouvière,D Jalabert,J Coraux,V Favre-Nicolin,H Renevier,M H Cho,K B Chung,D W Moon,M Gtouch on the subject of testing hypotheses in - stricted parameter spaces. The latest books on that subject are by Robertson, Wright and Dykstra (1988) and Akkerboom (1990), but many new results in that area ha978-0-387-33747-0978-0-387-48809-7Series ISSN 0930-0325 Series E-ISSN 2197-7186 作者: 輕快來(lái)事 時(shí)間: 2025-3-31 13:03 作者: 課程 時(shí)間: 2025-3-31 14:32 作者: CLEAR 時(shí)間: 2025-3-31 21:01
N K van der Laak,R A Oliver,M J Kappers,C McAleese,C J Humphreyslves, or of problems that cannot be solved by a particular result. The monograph does not touch on the subject of testing hypotheses in - stricted parameter spaces. The latest books on that subject are by Robertson, Wright and Dykstra (1988) and Akkerboom (1990), but many new results in that area ha
