標(biāo)題: Titlebook: Microelectronics, Circuits and Systems; Select Proceedings o Abhijit Biswas,Raghvendra Saxena,Debashis De Conference proceedings 2021 The E [打印本頁(yè)] 作者: EXTRA 時(shí)間: 2025-3-21 19:34
書目名稱Microelectronics, Circuits and Systems影響因子(影響力)
書目名稱Microelectronics, Circuits and Systems影響因子(影響力)學(xué)科排名
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書目名稱Microelectronics, Circuits and Systems網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Microelectronics, Circuits and Systems被引頻次
書目名稱Microelectronics, Circuits and Systems被引頻次學(xué)科排名
書目名稱Microelectronics, Circuits and Systems年度引用
書目名稱Microelectronics, Circuits and Systems年度引用學(xué)科排名
書目名稱Microelectronics, Circuits and Systems讀者反饋
書目名稱Microelectronics, Circuits and Systems讀者反饋學(xué)科排名
作者: 煩憂 時(shí)間: 2025-3-21 23:32
Impact of Channel Epilayer Induced Corner-Effect on the Sensing Performance of a Unique PTFET-Based esence of a corner due to the introduced epilayer, actually, comes to the aid of the proposed epi-pTFET-biosensor device by enhancing its detectability, compared to its equivalent conventional SOI pTFET sensor device by a great degree, yet maintaining significantly good sensitivity matrices throughout.作者: 猛然一拉 時(shí)間: 2025-3-22 01:53 作者: Adrenal-Glands 時(shí)間: 2025-3-22 08:36
Conference proceedings 2021 and techniques to match the theme of the conference. It will be a valuable resource for researchers, professionals, Ph.D. scholars, undergraduate and postgraduate students working in Electronics, Microelectronics, Electrical, and Computer Engineering..作者: 大喘氣 時(shí)間: 2025-3-22 10:38
1876-1100 for researchers and practitioners.Highlights various applic.This book presents a collection of peer-reviewed articles from the 7th International Conference on Microelectronics, Circuits, and Systems – Micro 2020. The volume covers the latest development and emerging research topics of material scie作者: AMBI 時(shí)間: 2025-3-22 13:01
Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the Peen solved by employing suitable boundary conditions. It is demonstrated that the device offers improved reliability in presence of trap charges and exhibits excellent immunity to short channel effects.作者: CRAB 時(shí)間: 2025-3-22 17:45
Unified Analytical Model for Charge Density and Plasmonic Waves in the Quaternary AlInGaN/AlN/GaN He accumulation in quaternary alloys, as compared to ternary alloys such as AlGaN, the introduced plasmon oscillations have a higher frequency by almost an order. Our model gives an insight into exploring the quaternary alloy-based HEMTs for future THz applications.作者: 不妥協(xié) 時(shí)間: 2025-3-22 22:03 作者: 結(jié)束 時(shí)間: 2025-3-23 03:27 作者: CROAK 時(shí)間: 2025-3-23 09:28 作者: 平躺 時(shí)間: 2025-3-23 10:02 作者: 撫育 時(shí)間: 2025-3-23 15:08 作者: Lipohypertrophy 時(shí)間: 2025-3-23 18:05
Interface Trap Charge Analysis of Junctionless Triple Metal Gate High-k Gate All Around Nanowire FET ., . and . for positive, neutral, and negative interface trap charges, respectively. Finally, we have found that a negative ITC has a positive impact on our proposed biotin biosensor device performance than the positive ITCs, proving its efficacy for the detection of cardiovascular diseases in biom作者: 協(xié)議 時(shí)間: 2025-3-24 00:15 作者: 單片眼鏡 時(shí)間: 2025-3-24 03:15
Radiation Tolerant Memory Cell for Aerospace Applicationsd to other comparison cells. Furthermore, the effect of supply voltage variation has also been studied by calculating and comparing all the parameters at different supply voltages. Monte Carlo simulations are also used for some of the parameters to evaluate the effects of process, voltage, and tempe作者: 殘暴 時(shí)間: 2025-3-24 09:07
A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM Cell NMOS access transistors. In the case of hold operation, both the Quatro and proposed cells are able to recover from?1?→?0 single event transients (SETs). For 0?→?1 single event transients (SETs) in hold operation, the proposed cell shows an increment of 3 μA in the current margin. This improves the作者: 原諒 時(shí)間: 2025-3-24 13:47 作者: 勉強(qiáng) 時(shí)間: 2025-3-24 14:59 作者: 我們的面粉 時(shí)間: 2025-3-24 23:02 作者: PIZZA 時(shí)間: 2025-3-25 00:24 作者: 智力高 時(shí)間: 2025-3-25 06:30
Shaveta,H. M. Maali Ahmed,Rishu Chaujarnce in publishing research. It offers unique insights into this particularly challenging area of field research, makes explicit how the authors handled methodological challenges and ethical dilemmas, and offers recommendations where appropriate.?.978-3-319-88692-3978-3-319-68966-1作者: Terminal 時(shí)間: 2025-3-25 09:05 作者: Complement 時(shí)間: 2025-3-25 13:23 作者: 燈泡 時(shí)間: 2025-3-25 18:08 作者: Eructation 時(shí)間: 2025-3-25 23:28 作者: 性學(xué)院 時(shí)間: 2025-3-26 02:54 作者: 同位素 時(shí)間: 2025-3-26 05:30
Mekonnen Getnet Yirak,Rishu ChaujarIn particular the chapter offers a critical examination of how this specific policy network is proposing to mine and analyse digital data from learners’ online networked activities in order to predict and pre-empt their future progress and outcomes, as part of a social and technical imaginary of the作者: 集聚成團(tuán) 時(shí)間: 2025-3-26 09:53
Bhavya Kumar,Rishu Chaujaraken as part of a JISC-funded project, we critique mainstream ‘learner-centred’ accounts of digital literacy; outline the theoretical framework on which our work has been based; and present a series of case studies that show how an individual’s ability to act in a digitally literate way depends on m作者: Thyroiditis 時(shí)間: 2025-3-26 13:09
Ankur Beohar,Ambika Prasad Shah,Nandakishor Yadav,Gopal Raut,Santosh Kumar Vishvakarmabetween such tools/devices and participants’ activities. More generally: how is what participants actually do influenced by the qualities of the place in which they are working, and by the tools and other resources that come to hand? Neither networked learning, nor the broader field of educational t作者: 亞麻制品 時(shí)間: 2025-3-26 19:15
Sanu Gayen,Suchismita Tewari,Avik Chattopadhyayty has become a dominant consideration in policy for higher education. Government has changed its relationship to higher education, most notably in the UK (focused on England), and is generally trying to both reduce overall expenditure and at the same time ensure either equivalent outputs or improve作者: 沒有希望 時(shí)間: 2025-3-26 21:07 作者: eardrum 時(shí)間: 2025-3-27 03:27 作者: Addictive 時(shí)間: 2025-3-27 07:29 作者: 裝飾 時(shí)間: 2025-3-27 10:25 作者: 外向者 時(shí)間: 2025-3-27 15:56 作者: 小隔間 時(shí)間: 2025-3-27 21:04
Manju K. Chattopadhyay,Kavita Thorat Upadhyaysuch as the National Center for Educator Development and the Training and Educational Development Center as key institutional change agents and capacity builders. The chapter elaborates on the advanced and progressive development activities of these agencies in addition to other relevant efforts suc作者: MAL 時(shí)間: 2025-3-28 00:14 作者: exigent 時(shí)間: 2025-3-28 05:37 作者: DRILL 時(shí)間: 2025-3-28 09:04 作者: BILL 時(shí)間: 2025-3-28 12:08
M. Aditya,Rishu Chaujaricacious positive psychological models of intervention to in.This book presents recent positive psychological research, applications and interventions being used among adolescents and children. Currently there is a wave of change occurring whereby educators, and others working with children and adol作者: tangle 時(shí)間: 2025-3-28 16:31 作者: ENACT 時(shí)間: 2025-3-28 21:16
Bhavya Kumar,Rishu Chaujarn capability or competence models of “digital literacy”. These decontextualised, cognitive accounts ignore the insights of New Literacy Studies (e.g. Lea and Street. Studies in Higher Education, 23(2), 157–172, 1998), which have shown that focusing on a ‘free floating’ learner, without reference to 作者: 針葉樹 時(shí)間: 2025-3-29 02:39 作者: 獨(dú)特性 時(shí)間: 2025-3-29 04:45 作者: CLASH 時(shí)間: 2025-3-29 07:34 作者: 半身雕像 時(shí)間: 2025-3-29 11:37
Pawan Kumar Sahu,Sparsh Koushik,Shashank Kumar Dubey,Aminul Islamlitical challenges since it became the special administrative region of China in 1997. In the 2014–2015 budget, the financial secretary of the government of the Hong Kong Special Administrative Region (the Hong Kong government, hereafter) made a remark that Hong Kong has reached a critical juncture 作者: 滑動(dòng) 時(shí)間: 2025-3-29 16:18 作者: 遣返回國(guó) 時(shí)間: 2025-3-29 22:25
Vaibhav Neema,Priyanka Parihar,Santosh Kumar Vishvakarma past two decades. Burton Clark (1998; 2004) began to examine university behavior and analyze why some are more successful than others in adapting to changing environments. The key factor in raising university performance lies at the core spirit of “entrepreneurship.” If universities are more entrep作者: 苦笑 時(shí)間: 2025-3-30 00:42 作者: 刺激 時(shí)間: 2025-3-30 05:23 作者: gospel 時(shí)間: 2025-3-30 11:15
Shaveta,H. M. Maali Ahmed,Rishu Chaujaromprehensively and cross-regionally in the first Open Access.This open access book offers a synthetic reflection on the authors’ fieldwork experiences in seven countries within the framework of ‘Authoritarianism in a Global Age’, a major comparative research project. It responds to the demand for in作者: 教唆 時(shí)間: 2025-3-30 15:07 作者: affect 時(shí)間: 2025-3-30 18:08
High Switching Performance of Novel Heterogeneous Gate Dielectric—Hetero-Material Based Junctionlessunnel field-effect transistor, HD-HJLTFET for analog analysis. In our proposed device, low bandgap material, InAs is used in the source region and higher bandgap material, GaAs is used in the channel and drain region to implement the bandgap engineering at the source to channel interface. Further, a作者: 教育學(xué) 時(shí)間: 2025-3-31 00:23
Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the PFinFET for achieving improved device performance even in the presence of trap charges. In order to study the characteristics, Poisson’s equation has been solved by employing suitable boundary conditions. It is demonstrated that the device offers improved reliability in presence of trap charges and e作者: photopsia 時(shí)間: 2025-3-31 02:56
High-K Biomolecule Sensor Based on L-Shaped Tunnel FETTFETs) in wet environment. This scheme relies on entire removal of vertical oxide arm of L-shaped device in which the biomolecules are captured by the receptors attached to the oxide-semiconductor interface. The dielectric constant of the biomolecules influences current-voltage characteristics of th作者: 壟斷 時(shí)間: 2025-3-31 08:52 作者: poliosis 時(shí)間: 2025-3-31 09:33
Interface Trap Charge Analysis of Junctionless Triple Metal Gate High-k Gate All Around Nanowire FEThe impact of different interface trap charges (ITCs) on device performance. The output characteristics, such as transconductance, drain current, total current density, and threshold voltage of proposed device have been examined. All results were authenticated using ‘‘a(chǎn)tlas-3D’’ device simulation too作者: ELUC 時(shí)間: 2025-3-31 13:20
Fin Aspect Ratio Optimization of Novel Junctionless Gate Stack Gate All Around (GS-GAA) FinFET for AGate Stack Gate All Around (GS-GAA) FinFET. Several important electrostatic, analog, and RF parameters have been explored with the help of the SILVACO ATLAS 3D simulator. A reduction in leakage current (I.) and subthreshold swing (SS) has been observed for the high Fin aspect ratio. The I. of the de作者: 搜尋 時(shí)間: 2025-3-31 18:07 作者: sterilization 時(shí)間: 2025-4-1 00:32
