標題: Titlebook: Metallization and Metal-Semiconductor Interfaces; Inder P. Batra Book 1989 Plenum Press, New York 1989 Doping.Metall.Semiconductor.Tunnel [打印本頁] 作者: 武士精神 時間: 2025-3-21 18:47
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書目名稱Metallization and Metal-Semiconductor Interfaces影響因子(影響力)學科排名
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書目名稱Metallization and Metal-Semiconductor Interfaces網(wǎng)絡公開度學科排名
書目名稱Metallization and Metal-Semiconductor Interfaces被引頻次
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書目名稱Metallization and Metal-Semiconductor Interfaces讀者反饋
書目名稱Metallization and Metal-Semiconductor Interfaces讀者反饋學科排名
作者: conscience 時間: 2025-3-21 23:03
0258-1221 the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as- sessment作者: Irritate 時間: 2025-3-22 01:48 作者: Servile 時間: 2025-3-22 07:09
Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodesn,. interface dislocations,. or a combination of these effects. Deviations from the Schottky model2 are then understandable on the basis of trapped interface charge which maintains a dipole at the interface between the metal and the semiconductor..作者: 溝通 時間: 2025-3-22 12:18 作者: Musculoskeletal 時間: 2025-3-22 14:51 作者: CESS 時間: 2025-3-22 18:10
Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfacesy of the electronic properties of these interfaces at a level not possible for other metal-semiconductor systems. These Schottky-barrier systems are on a par with, or perhaps better than, molecular-beam-epitaxy-grown semiconductor heterostructures in their degree of perfection.作者: 廢墟 時間: 2025-3-22 23:14
e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA作者: 利用 時間: 2025-3-23 03:42 作者: jagged 時間: 2025-3-23 07:19
e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA作者: 保守黨 時間: 2025-3-23 11:42 作者: CRAMP 時間: 2025-3-23 15:15 作者: escalate 時間: 2025-3-23 19:34 作者: moribund 時間: 2025-3-24 00:56
ld technique, it has recently gained favor in the field of RNA nanotechnology, notably in assessing the thermal stabilities of RNA nanoparticles (NPs). With TGGE, an electrical current and a linear temperature gradient are applied simultaneously to NP-loaded polyacrylamide gel, separating the negati作者: NUDGE 時間: 2025-3-24 04:11
R. H. Williams, DNA, and/or modified nucleic acids. Due to the regulatory role of nucleic acids in the cellular system, NANPs have the ability to identify target molecules and regulate expression of genes in disease pathways. However, translation of NANPs in clinical settings is hindered due to inefficient intrac作者: Insubordinate 時間: 2025-3-24 07:47 作者: GLADE 時間: 2025-3-24 10:57
C. A. Sébenne, DNA, and/or modified nucleic acids. Due to the regulatory role of nucleic acids in the cellular system, NANPs have the ability to identify target molecules and regulate expression of genes in disease pathways. However, translation of NANPs in clinical settings is hindered due to inefficient intrac作者: Cougar 時間: 2025-3-24 18:46 作者: A簡潔的 時間: 2025-3-24 20:14
, DNA, and/or modified nucleic acids. Due to the regulatory role of nucleic acids in the cellular system, NANPs have the ability to identify target molecules and regulate expression of genes in disease pathways. However, translation of NANPs in clinical settings is hindered due to inefficient intrac作者: 燒瓶 時間: 2025-3-25 02:25 作者: 粘土 時間: 2025-3-25 05:42
A. Kahn,K. Stiles,D. Mao,S. F. Horng,K. Young,J. McKinley,D. G. Kilday,G. Margaritondornative but coexisting conformations. Separation and purification of RNA is generally required for investigating the structure and function of RNA, such as RNA catalysis and RNA structure determination by nuclear magnetic resonance or crystallography. Separation and purification of RNA is also requi作者: 合并 時間: 2025-3-25 08:48 作者: Hearten 時間: 2025-3-25 14:40 作者: 騷動 時間: 2025-3-25 19:26 作者: ellagic-acid 時間: 2025-3-25 20:44 作者: hypnotic 時間: 2025-3-26 01:32 作者: 詢問 時間: 2025-3-26 06:20
ir nuclear retention and ultimately the degradation of their mRNA component by the 3′–5′ activity of the exosome-associated exonuclease Rrp6. This mRNP quality control process is stimulated by the NNS complex (Nrd1-Nab3-Sen1), which otherwise mediates termination, processing, and decay of ncRNAs. Th作者: Cardiac-Output 時間: 2025-3-26 09:06
Introduction to Metallization and Metal-Semiconductor Interfacescircuits. One such interface is a junction between a metal and a semiconductor; the components based on these are widely used in the microelectronics industry. A junction between a metal and a semiconductor is called a Schottky junction, named after W. Schottky. Nearly half a century ago, Schottky p作者: 細查 時間: 2025-3-26 15:33
The Role of Defects and Metal States at the Metal-Semiconductor Interfacel induced gap states (MIGS) models . and defect models.. These two types of models are mutually exclusive, as the MIGS models generally ignore the influence of defects and the defect models, for their part, ignore the importance of screening by the metal. Historically the MIGS models preceded the ot作者: 可互換 時間: 2025-3-26 17:06 作者: gangrene 時間: 2025-3-26 22:12 作者: Mystic 時間: 2025-3-27 05:11
Deep Levels and Band Bending at Metal-Semiconductor Interfaces properties of different metal overlayers and the physical mechanisms responsible for this Fermi level “pinning”. Hampering efforts to identify the nature of charge transfer at these electronic junctions has been the narrow ranges of reported Fermi stabilization energies themselves, which permit a n作者: Musket 時間: 2025-3-27 05:18 作者: Confirm 時間: 2025-3-27 12:28 作者: 領袖氣質(zhì) 時間: 2025-3-27 16:14 作者: FLAIL 時間: 2025-3-27 21:00
Metal-GaAs(110) Interfaces Formed at Low Temperature: From Adsorbate- to Metal-Induced Gap Statestroversial) .. The origin and nature of the interface states which pin the Fermi level (E.) at metal-semiconductor interfaces remain uncertain. The difficulty in resolving this issue stems from the diversity of metal-semiconductor interfaces and from the complexity of their chemistry, morphology and作者: 短程旅游 時間: 2025-3-27 23:40
Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Ybic layers when they are grown at room temperature ( RT ) or even at lower temperatures, such as around 80 °K (conventionally called LNT, Liquid Nitrogen Temperature ). This fact resulted intriguing in consideration of the rather high energy needed to break a bond in many semiconductor substrates. Fo作者: 不要嚴酷 時間: 2025-3-28 03:12
Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfacesis because these silicides grow pseudomorphically on Si, and form atomically abrupt interfaces with a low defect density. Because they are pseudomorphic, they offer the opportunity to understand the atomic geometry of the interface in complete detail. This, in turn, permits detailed theoretical stud作者: 競選運動 時間: 2025-3-28 10:15
Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfout 0.1 eV using density functional theory in the local approximation (LDA). We have investigated whether, for well-characterised metal-semiconductor interfaces, the Schottky-barrier heights can be calculated with similar accuracy. In this paper we report on our findings.作者: Conspiracy 時間: 2025-3-28 12:33 作者: 挫敗 時間: 2025-3-28 15:56 作者: 突襲 時間: 2025-3-28 18:45 作者: 本能 時間: 2025-3-29 02:39
978-1-4612-8086-6Plenum Press, New York 1989作者: 賭博 時間: 2025-3-29 03:04
Metallization and Metal-Semiconductor Interfaces978-1-4613-0795-2Series ISSN 0258-1221 作者: 臭了生氣 時間: 2025-3-29 07:39 作者: 文件夾 時間: 2025-3-29 13:37 作者: 敘述 時間: 2025-3-29 18:00
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfacess is because the emphasis has been on discovering a single mechanism which could explain everything. Monch [12] has already suggested the importance of multiple mechanisms, and this approach will be emphasized in this paper.作者: Anticoagulant 時間: 2025-3-29 21:18 作者: 現(xiàn)代 時間: 2025-3-30 00:03
The Role of Defects and Metal States at the Metal-Semiconductor Interfaceempty, cation-derived dangling bond states. The consequence of this interaction is the formation of broadened resonances which tail into the semiconductor bandgap. The rehybridization of the dangling bonds with the metallic states at the interface was not considered. In general the MIGS models encou作者: 溫和女人 時間: 2025-3-30 05:49 作者: Blood-Clot 時間: 2025-3-30 10:56
Deep Levels and Band Bending at Metal-Semiconductor Interfacesen those previously thought to be strongly “pinned”, exhibit wide ranges of Fermi level stabilization w i t h different metal overlayers. Secondly, it is now possible to observe interface states directly by optical techniques and to demonstrate their direct relationship to Fermi level stabilization 作者: 歡笑 時間: 2025-3-30 16:23
Metal-GaAs(110) Interfaces Formed at Low Temperature: From Adsorbate- to Metal-Induced Gap StatesIn addition, Vitturo et al. have recently indicated that deep levels in the bulk of the materials used for most Schottky barrier formation studies, ie. liquid-encapsulated Czochralski GaAs, might be responsible for the narrow range of EF pinning in the gap, and that pinning occurs in a much wider ra作者: MENT 時間: 2025-3-30 17:54 作者: Myelin 時間: 2025-3-30 23:42
Book 1989devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro- vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an int作者: Budget 時間: 2025-3-31 03:06
0258-1221 regime. The book should pro- vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an int978-1-4612-8086-6978-1-4613-0795-2Series ISSN 0258-1221 作者: misshapen 時間: 2025-3-31 07:11
can be used in stand-alone mode to extract base-calling “error” features and current intensity information from dRNA-seq datasets. In this chapter, we provide step-by-step instructions on how to produce in vitro?transcribed constructs to train ., as well as detailed information on how to use . to t作者: 樹膠 時間: 2025-3-31 09:23
Inder P. Batramaterials and reagents, step-by-step, readily reproducible laboratory protocols, and tips on troubleshooting and avoiding known pitfalls.?.Authoritative and practical, .RNA Modifications: Methods and Protocols. serves as an ideal guide for those working directly in the fields of epitranscriptomics a
