標(biāo)題: Titlebook: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch; Viranjay M. Srivastava,Ghanshyam Singh Book 2014 Springer Internati [打印本頁] 作者: Encomium 時(shí)間: 2025-3-21 16:41
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作者: 放牧 時(shí)間: 2025-3-21 21:24 作者: 引水渠 時(shí)間: 2025-3-22 03:38
Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch,c constants. Hafnium dioxide (also known as Hafnia) is one of them, which has relatively large energy bandgap and a better thermal stability as compared to silicon [1]. It is a leading contender for new high-k gate dielectric films.作者: DUCE 時(shí)間: 2025-3-22 04:41
Testing of MOSFETs Surfaces Using Image Acquisition,y improves the overall efficiency and the cost of the system. A complete vision chip consisting of a photodetector array, which is effectively implemented on DG MOSFET and CSDG MOSFET, is formed on the rectangular and cylindrical substrate, respectively [2].作者: condescend 時(shí)間: 2025-3-22 10:43
Conclusions and Future Scope,d in detail, and the impact on the power consumption with respect to ON-state resistance and current, propagation delay, leakage behavior, as well as area of the device is presented. It shows that the numbers of transistor are reduced with the application of DG MOSFET and also the area can be signif作者: 重疊 時(shí)間: 2025-3-22 14:10 作者: CEDE 時(shí)間: 2025-3-22 18:04 作者: 共和國 時(shí)間: 2025-3-23 01:18
enefit experienced researchers by providing a reference guide to the fundamentals of non-commutative field theory with an emphasis on matrix models and fuzzy geometries..978-3-319-46002-4978-3-319-46003-1Series ISSN 0075-8450 Series E-ISSN 1616-6361 作者: RENAL 時(shí)間: 2025-3-23 03:48 作者: 釋放 時(shí)間: 2025-3-23 06:52 作者: 悠然 時(shí)間: 2025-3-23 10:50
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch作者: superfluous 時(shí)間: 2025-3-23 15:07 作者: Ligament 時(shí)間: 2025-3-23 21:51
Design of Double-Pole Four-Throw RF Switch,dical purposes such as ., ., and medical . machines. The powerful emissions of these devices can create electromagnetic interference and disrupt radio communication using the same frequency, so these devices were limited to certain bands of frequencies. In general, communication equipment operating 作者: Invigorate 時(shí)間: 2025-3-24 01:17
Design of Double-Gate MOSFET,of transistors area. The transistor scaling necessitates the integration of new device structures. The Double-Gate (DG) MOSFETs are example of this, which are capable for nanoscale integrated circuits due to their enhanced scalability compared to the bulk or Si-CMOS [1–5]. However, the better scalab作者: CHASM 時(shí)間: 2025-3-24 03:55 作者: dura-mater 時(shí)間: 2025-3-24 09:02 作者: 移植 時(shí)間: 2025-3-24 13:33
Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch,ltage and requires high value of resistance in circuitry of the transceivers to detect the signal. To avoid the high value of control voltage and resistances, we have designed a novel double-pole four-throw (DP4T) RF switch by using the MOSFET technology and analyzed its performance in terms of drai作者: 善變 時(shí)間: 2025-3-24 16:42 作者: minimal 時(shí)間: 2025-3-24 22:21
Conclusions and Future Scope,des the basics of the circuit elements parameter required for the radio-frequency subsystems of the integrated circuits such as drain current, output voltage, threshold voltage, capacitances, resistances at switch ON-state condition, oxide thickness, resistance of polysilicon, number of bulk capacit作者: 有權(quán) 時(shí)間: 2025-3-25 02:59
Viranjay M. Srivastava,Ghanshyam Singhr derived from a list of ten philosophical problems in deontic logic recently discussed by Hansen, Pigozzi and van der Torre. In what sense are obligations different from norms? How to reason about contrary-to-duty norms? How do norms change? How to relate various kinds of permissions? What is the r作者: Phonophobia 時(shí)間: 2025-3-25 06:43 作者: intelligible 時(shí)間: 2025-3-25 10:19 作者: Precursor 時(shí)間: 2025-3-25 11:39 作者: 卵石 時(shí)間: 2025-3-25 16:36 作者: 該得 時(shí)間: 2025-3-25 23:44 作者: 我吃花盤旋 時(shí)間: 2025-3-26 00:27
Analog Circuits and Signal Processinghttp://image.papertrans.cn/m/image/620207.jpg作者: 藕床生厭倦 時(shí)間: 2025-3-26 06:41 作者: Fortify 時(shí)間: 2025-3-26 08:47 作者: VOK 時(shí)間: 2025-3-26 12:46
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch978-3-319-01165-3Series ISSN 1872-082X Series E-ISSN 2197-1854 作者: 不如樂死去 時(shí)間: 2025-3-26 19:17
1872-082X ectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.978-3-319-34535-2978-3-319-01165-3Series ISSN 1872-082X Series E-ISSN 2197-1854 作者: 時(shí)代錯(cuò)誤 時(shí)間: 2025-3-26 23:04 作者: TAP 時(shí)間: 2025-3-27 04:22 作者: 變化 時(shí)間: 2025-3-27 07:19
Design of Double-Pole Four-Throw RF Switch,irements of devices transmitting at ISM band frequencies (900?MHz and above). The low insertion loss, high isolation between ports, low distortion, and low current consumption of these devices make them an excellent solution for several high-frequency applications [3].作者: 過分 時(shí)間: 2025-3-27 12:00
1872-082X ET and HFO2 based MOSFET.Explains the design of RF switches This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the 作者: FAR 時(shí)間: 2025-3-27 14:47 作者: 玩忽職守 時(shí)間: 2025-3-27 19:27
Book 2014ll as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.作者: 帳單 時(shí)間: 2025-3-27 22:21 作者: 優(yōu)雅 時(shí)間: 2025-3-28 05:31 作者: Longitude 時(shí)間: 2025-3-28 06:28
Ji Zhao,Jiaming Liu,Qiang Li,Lingli Tang,Hongbin Zhangrial case studies, they capture the wealth of knowledge that eight companies have gathered during the introduction of the software product line engineering approach in their daily practice. After reading this b978-3-642-09061-5978-3-540-71437-8作者: finale 時(shí)間: 2025-3-28 10:45 作者: pineal-gland 時(shí)間: 2025-3-28 17:11 作者: 潛伏期 時(shí)間: 2025-3-28 22:09
