標(biāo)題: Titlebook: MOSFET Models for VLSI Circuit Simulation; Theory and Practice Narain Arora Book 1993 Springer-Verlag/Wien 1993 Regression.SPICE.Signal.VLS [打印本頁] 作者: 轉(zhuǎn)變 時(shí)間: 2025-3-21 16:15
書目名稱MOSFET Models for VLSI Circuit Simulation影響因子(影響力)
書目名稱MOSFET Models for VLSI Circuit Simulation影響因子(影響力)學(xué)科排名
書目名稱MOSFET Models for VLSI Circuit Simulation網(wǎng)絡(luò)公開度
書目名稱MOSFET Models for VLSI Circuit Simulation網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱MOSFET Models for VLSI Circuit Simulation被引頻次
書目名稱MOSFET Models for VLSI Circuit Simulation被引頻次學(xué)科排名
書目名稱MOSFET Models for VLSI Circuit Simulation年度引用
書目名稱MOSFET Models for VLSI Circuit Simulation年度引用學(xué)科排名
書目名稱MOSFET Models for VLSI Circuit Simulation讀者反饋
書目名稱MOSFET Models for VLSI Circuit Simulation讀者反饋學(xué)科排名
作者: 調(diào)味品 時(shí)間: 2025-3-21 22:46
Computational Microelectronicshttp://image.papertrans.cn/m/image/620206.jpg作者: Foam-Cells 時(shí)間: 2025-3-22 03:52
978-3-7091-9249-8Springer-Verlag/Wien 1993作者: 絆住 時(shí)間: 2025-3-22 07:59
MOSFET Models for VLSI Circuit Simulation978-3-7091-9247-4Series ISSN 0179-0307 作者: 悲痛 時(shí)間: 2025-3-22 11:23 作者: wreathe 時(shí)間: 2025-3-22 16:44 作者: Vasodilation 時(shí)間: 2025-3-22 19:48 作者: installment 時(shí)間: 2025-3-23 01:04 作者: 清醒 時(shí)間: 2025-3-23 01:41
al methods.Discusses optimization problems and machine learn.This textbook provides the reader with an essential understanding of computational methods for intelligent systems. These are defined as systems that can solve problems autonomously, in particular problems where algorithmic solutions are i作者: visceral-fat 時(shí)間: 2025-3-23 05:54 作者: 一個(gè)姐姐 時(shí)間: 2025-3-23 12:52 作者: Free-Radical 時(shí)間: 2025-3-23 15:44
Narain AroraBayes’ Theorem. Broadly speaking, Bayes’ Theorem deals with the modification of our perception of the probability of an event, as a consequence of the occurrence of one or more facts. For instance, what probability are you assigning to the event “somebody stole my car” at the moment? Of course, this作者: photopsia 時(shí)間: 2025-3-23 19:17 作者: Provenance 時(shí)間: 2025-3-24 01:10
Narain Arorave ideas on kinetic processes in solid materials. Kinetics is concerned with the rate of change of the state of existence of a material system under thermodynamic driving forces. Kinetic processes in materials typically involve chemical reactions and solid state diffusion in parallel or in tandem. T作者: 噴出 時(shí)間: 2025-3-24 03:50
Narain Arorarming that such interactions between elementary particles can be described by quantum field theory, more specifically by a renormalizable gauge theory. This theory is .a priori. valid for arbitrarily high energy scales and does not require an ultraviolet completion..Yet, when trying to apply the con作者: 煞費(fèi)苦心 時(shí)間: 2025-3-24 07:04 作者: moratorium 時(shí)間: 2025-3-24 13:56 作者: Paraplegia 時(shí)間: 2025-3-24 16:13
Narain Arorapotheses Concerning Psycholinguistics”, 1970). He questions whether the deep . (MG) could be equated with a . characterized by any ., deriving from the intuitions of linguists about relations among sentence in a language. He then goes on to state that the deep mental grammar must be equated with an 作者: 持續(xù) 時(shí)間: 2025-3-24 21:28 作者: Ambiguous 時(shí)間: 2025-3-24 23:10
values of p.. Such behaviour was expected from the extrapolation of the low energy data. It came therefore as a surprise that in three independent experiments. the invariant cross section distribution of charged pions was observed to deviate strongly from the a .T dependence at large p.. This discov作者: Bombast 時(shí)間: 2025-3-25 05:07
Overview,60 that the first MOS transistor using silicon as the semiconductor material was reported by Kang and Atalla [2]. The MOS technology became viable only after methods of routinely growing reliable oxides were developed and reported by Snow, Grove, Deal and Sah in 1964 [3]. Since that time the MOS ind作者: Nausea 時(shí)間: 2025-3-25 10:41
Review of Basic Semiconductor and , Junction Theory,follows. Also reviewed is . junction theory as its behavior is basic to the operation of transistors. The review is brief and covers only those topics which have direct relevance to MOS VLSI circuits. For more exhaustive treatments, the reader is referred to textbooks on the subject [1]–[12].作者: 單片眼鏡 時(shí)間: 2025-3-25 13:22 作者: Palpitation 時(shí)間: 2025-3-25 17:38
MOS Capacitor, a two terminal device, with one electrode connected to the metal and the other electrode connected to the semiconductor, a . results. The MOS capacitor is a very useful device both for evaluating the MOS IC fabrication process and for predicting the MOS transistor characteristics. For this reason M作者: mortgage 時(shí)間: 2025-3-25 21:57
Threshold Voltage,on. The accurate modeling of threshold voltage is important to predict correct circuit behavior from a circuit simulator. Since .. has profound effect on circuit operation, it is often used to monitor process variations. Present day MOS process invariably use ion implantation into the channel region作者: 蒙太奇 時(shí)間: 2025-3-26 02:28
MOSFET DC Model, the device remain constant, that is they do not vary with time; (b) a dynamic or AC model, where the device terminal voltages do not remain constant but vary with time. In this chapter we will discuss only DC MOS transistor models for different regions of device operation. In the next chapter we wi作者: 數(shù)量 時(shí)間: 2025-3-26 08:13 作者: MINT 時(shí)間: 2025-3-26 08:55
Modeling Hot-Carrier Effects, continued, the supply voltage remained constant (normally 5 V) due to the constraints of retaining compatibility with existing systems. This has resulted in increased vertical electric fields in the oxide which have already reached above 1 MV/cm in thin oxides. The scaling of channel length, meanwh作者: Aviary 時(shí)間: 2025-3-26 16:28 作者: 劇本 時(shí)間: 2025-3-26 20:23
Model Parameter Extraction Using Optimization Method,easurements and/or extraction. We had also discussed linear regression methods to determine basic MOSFET parameters. In this chapter we will be concerned with the nonlinear optimization techniques for extracting the device model parameters for various DC and AC models. These techniques are general p作者: 輕而薄 時(shí)間: 2025-3-27 00:14
SPICE Diode and MOSFET Models and Their Parameters,e to derive the model equations, as that has already been done at appropriate places in previous chapters. Here we will only describe equations used to model different regions of device operation. Emphasis will be on model parameters required to run SPICE and how to measure them.作者: 濕潤 時(shí)間: 2025-3-27 02:04
Statistical Modeling and Worst-Case Design Parameters,ally differ from their drawn (intended) dimensions due to several processing effects such as lateral expansion of local oxidation, imperfect etching, mask alignment tolerances, etc. It is observed, for example, in a 2 .m CMOS process, a polysilicon line drawn to be .μm could be any where between 1.3作者: 文藝 時(shí)間: 2025-3-27 09:00 作者: Comprise 時(shí)間: 2025-3-27 13:09 作者: 雪白 時(shí)間: 2025-3-27 17:14
Data Acquisition and Model Parameter Measurements,th devices and under different bias conditions. Collecting measured data and processing these data to accurately determine model parameter values is an essential task for the complete characterization of a transistor model for use in the circuit simulator.作者: 供過于求 時(shí)間: 2025-3-27 19:43
Model Parameter Extraction Using Optimization Method, Our intent here is only to provide an introduction to the optimization technique as applied to the device model parameter extraction. Various optimization programs (also called optimizers), which have been reported in the literature for device model parameter extraction, differ mainly in the optimization algorithms used.作者: 托人看管 時(shí)間: 2025-3-27 23:20 作者: Calibrate 時(shí)間: 2025-3-28 05:01 作者: 變化無常 時(shí)間: 2025-3-28 09:30 作者: 凹室 時(shí)間: 2025-3-28 11:29 作者: 使人煩燥 時(shí)間: 2025-3-28 18:21 作者: Anecdote 時(shí)間: 2025-3-28 21:25
Narain Arora some events can modify the probability of others. This property can be exploited to tackle Machine Learning tasks, for instance classification: data, interpreted as events, can be used to change the probability that a given observation belongs to a given class. Before studying this mechanism in det作者: 減震 時(shí)間: 2025-3-28 23:53
Narain Arorato understand the inner workings of the process, and to design the optimal process of material state change..Provides students with the tools to predict quantitatively how fast a kinetic process takes place and solve other diffusion related problems;.Learns fundamental and quantitative ideas on kine作者: 自由職業(yè)者 時(shí)間: 2025-3-29 04:46
Narain Arorato understand the inner workings of the process, and to design the optimal process of material state change..Provides students with the tools to predict quantitatively how fast a kinetic process takes place and solve other diffusion related problems;.Learns fundamental and quantitative ideas on kine作者: PACK 時(shí)間: 2025-3-29 09:08
Narain Arorass the many facets of Higgs physics, which is at the core of this significantlyexpanded second edition; then QCD, to the degree relevant for LHC measurements; as well as further standard phenomenological background knowledge. They are intended to serve as a brief but sufficiently detailed primer on 作者: 不近人情 時(shí)間: 2025-3-29 14:54
Narain Arorass the many facets of Higgs physics, which is at the core of this significantlyexpanded second edition; then QCD, to the degree relevant for LHC measurements; as well as further standard phenomenological background knowledge. They are intended to serve as a brief but sufficiently detailed primer on 作者: 五行打油詩 時(shí)間: 2025-3-29 17:14
Narain Aroraon of individual sentential paradigms” (p. 187), x and y independently, in order to most efficiently satisfy pragmatic demands of communication). But aside from casual reference to the language performances of ordinary speaker-hearers (particularly children), Watt is quite vague about how an APG is 作者: 脫水 時(shí)間: 2025-3-29 20:38
Narain Aroraon of individual sentential paradigms” (p. 187), x and y independently, in order to most efficiently satisfy pragmatic demands of communication). But aside from casual reference to the language performances of ordinary speaker-hearers (particularly children), Watt is quite vague about how an APG is 作者: labile 時(shí)間: 2025-3-30 00:16
