標(biāo)題: Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N [打印本頁] 作者: 珍愛 時間: 2025-3-21 17:09
書目名稱Low-Dimensional Structures in Semiconductors影響因子(影響力)
書目名稱Low-Dimensional Structures in Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Low-Dimensional Structures in Semiconductors網(wǎng)絡(luò)公開度
書目名稱Low-Dimensional Structures in Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Low-Dimensional Structures in Semiconductors被引頻次
書目名稱Low-Dimensional Structures in Semiconductors被引頻次學(xué)科排名
書目名稱Low-Dimensional Structures in Semiconductors年度引用
書目名稱Low-Dimensional Structures in Semiconductors年度引用學(xué)科排名
書目名稱Low-Dimensional Structures in Semiconductors讀者反饋
書目名稱Low-Dimensional Structures in Semiconductors讀者反饋學(xué)科排名
作者: Jacket 時間: 2025-3-21 20:20
Impurities in Semiconductorshe application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photot作者: Promotion 時間: 2025-3-22 03:46 作者: 擺動 時間: 2025-3-22 06:38 作者: 頌揚(yáng)國家 時間: 2025-3-22 12:39
Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerstransistors were fabricated from germanium, later from silicon. It was soon realized that also the A.–B. or A. – B. materials (most often simply termed III–V or II–VI materials) exhibited semiconductive behaviour. The energy difference between the valence band and the conduction band made them candi作者: Charitable 時間: 2025-3-22 15:40 作者: 保守 時間: 2025-3-22 18:34 作者: 蘑菇 時間: 2025-3-22 22:59
Chemical Interfaces: Structure, Properties and Relaxation properties of materials by the creation of interfaces. ‘Band gap engineering’, the attempt to tailor the electronic properties of semiconductors by interleaving many dissimilar layers is an extreme example of this approach. Technologically most advanced and thus most widely used are interfaces betw作者: 存在主義 時間: 2025-3-23 01:55
Capacitance-Voltage Profiling of Multilayer Semiconductor Structures heterojunction band offsets [1]. It has been recognised [2] that a profile of the free electron concentration n(x) is obtained from C-V techniques rather than that of the doping profile N.(x). These are not necessarily the same even for the case of very shallow donors. Indeed, they will be differen作者: meritorious 時間: 2025-3-23 05:53 作者: 招待 時間: 2025-3-23 11:10
Basic Optical Properties of Low Dimensional Structures for Applications to Lasers, Electro-Optic andplications. As this field has already reached immense dimensions and is still growing very fast, we only cover some very fundamental items, most of them of universal use in LDS’s, with illustrations only in the directgap type I quantum well, examplified by the GaAs/GaAlAs system. We have chosen to c作者: NATAL 時間: 2025-3-23 16:34
Hot Electron Devices, which traverses a thin GaAs region to be eventually collected and energy analyzed. As the hot electrons traverse the device they are used to probe: scattering events, band nonparabolicity, size quantization effects, intervalley transfer, quantum mechanical reflections, and band discontinuities at 作者: Inkling 時間: 2025-3-23 19:46
Hot Electrons and Degradation Effects in FET Devicesshown that light emission from the hot electrons provides a measurement of their energy distribution. We discuss degradation effects and show how the spatial location of inferface defects may determined.作者: JIBE 時間: 2025-3-23 22:48 作者: 傷心 時間: 2025-3-24 04:53
H. G. Grimmeiss,M. Kleverman,J. Olajos,P. Omling,V. Nagesh作者: 助記 時間: 2025-3-24 09:10 作者: 詢問 時間: 2025-3-24 10:59 作者: hardheaded 時間: 2025-3-24 16:22
Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerser diodes. These devices are multiple layer structures with a thin waveguide region contained between layers of larger bandgap and different refractive index (for confinement of carriers and radiation, respectively, in the active region). A basic laser diode chip consists of two parallel facets, (11作者: 有害 時間: 2025-3-24 21:28 作者: 不能強(qiáng)迫我 時間: 2025-3-25 01:40
Concepts and Applications of Band Structure Engineering in Optoelectronics alloy composition and band gap. A similar linear relation exists between the gap and the lattice constant. Semiconductor heterostructures offer a different way of achieving changes in band gap. When a thin layer of, say, GaAs is sandwiched between layers of Ga.Al.As, the larger gap material (the al作者: Trigger-Point 時間: 2025-3-25 04:15
Book 1991rst of which deals with basic con- cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The t作者: SUE 時間: 2025-3-25 10:18
0258-1221 .. from Basic Physics to Applications.‘ This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa m作者: 任命 時間: 2025-3-25 13:40
Impurities in Semiconductors in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail. Si/Ge is taken as an example to show how JSCT can be used for the study of low-dimensional structures.作者: 脫落 時間: 2025-3-25 16:30
Photoluminescence of 3D and Low Dimensional Systemsn techniques allow us to probe further the fine detail of complex semiconductor structures. The literature on photoluminescence is vast, and so I have tried to emphasise basic mechanisms and to illustrate how photoluminescence spectroscopy has evolved to explore these mechanisms.作者: CIS 時間: 2025-3-25 23:15 作者: BROTH 時間: 2025-3-26 02:19 作者: 摻和 時間: 2025-3-26 07:48 作者: 平躺 時間: 2025-3-26 10:53
Book 1991sic Physics to Applications.‘ This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role 作者: 合法 時間: 2025-3-26 13:54
NATO Science Series B:http://image.papertrans.cn/l/image/588858.jpg作者: 過濾 時間: 2025-3-26 19:14
https://doi.org/10.1007/978-1-4899-0623-6Phase; electrons; integrated circuit; laser; materials science; optoelectronics; semiconductors作者: 尋找 時間: 2025-3-26 23:50
978-1-4899-0625-0Springer Science+Business Media New York 1991作者: Gudgeon 時間: 2025-3-27 04:19
Low-Dimensional Structures in Semiconductors978-1-4899-0623-6Series ISSN 0258-1221 作者: 撕裂皮肉 時間: 2025-3-27 09:14
Basic Optical Properties of Low Dimensional Structures for Applications to Lasers, Electro-Optic andplications. As this field has already reached immense dimensions and is still growing very fast, we only cover some very fundamental items, most of them of universal use in LDS’s, with illustrations only in the directgap type I quantum well, examplified by the GaAs/GaAlAs system. We have chosen to cover the following few topics:作者: 抱怨 時間: 2025-3-27 10:05
Hot Electron Devices, which traverses a thin GaAs region to be eventually collected and energy analyzed. As the hot electrons traverse the device they are used to probe: scattering events, band nonparabolicity, size quantization effects, intervalley transfer, quantum mechanical reflections, and band discontinuities at interfaces.作者: Ergots 時間: 2025-3-27 14:50 作者: 相信 時間: 2025-3-27 20:29
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